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T2035H-600G

STMicroelectronics

T2035H-600G by STMicroelectronics

T2035H-600G by STMicroelectronics is a snubberless TRIAC designed for AC control applications. It features a max RMS on-state current of 20 A, operates up to 150 °C, and supports a repetitive peak off-state voltage of 600 V. Ideal for efficient power management in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,471 parts In-Stock

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2,471

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Vyrian

USA . 2,438 parts In-Stock

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2,438

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Anansix

USA . 2,292 parts In-Stock

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2,292

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 170 parts In-Stock

1+ parts

$2.519

100+ parts

-

1k+ parts

$2.267

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170

$2.519

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$2.267

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MKK Technologies

India . 784 parts In-Stock

1+ parts

$4.737

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784

$4.737

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DigiPath Technology Company

USA . 784 parts In-Stock

1+ parts

$4.737

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784

$4.737

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Corphita

USA . 3,713 parts In-Stock

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3,713

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Parana Technologies

USA . 934 parts In-Stock

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$3.012

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934

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$3.012

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Overview

Unlock seamless control and efficiency with the T2035H-600G TRIAC from STMicroelectronics. Renowned for its superior quality and innovation, STMicroelectronics ensures this snubberless TRIAC excels in applications like motor control and lighting. With robust performance in extreme conditions, it delivers reliability and longevity. Experience outstanding value while optimizing your designs with a component engineered to enhance functionality and reduce energy consumption.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers good durability and resistance to environmental factors, making this TRIAC reliable for long-term usage.

Maximum DC Gate Trigger Current: 35 mA

A maximum gate trigger current of 35 mA allows for efficient triggering with lower power requirements, enhancing the overall energy efficiency of the device.

Configuration: SINGLE

The single configuration simplifies the circuit design and integration process, making it easy to use in various applications.

Surface Mount: YES

This TRIAC is designed for surface mount applications, facilitating compact designs and simplifying assembly on printed circuit boards (PCBs).

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization while providing reliable connectivity and thermal performance.

Terminal Form: GULL WING

Gull wing terminals ensure strong mechanical and electrical connections, enhancing the reliability of the component under vibration or thermal cycling conditions.

Maximum Leakage Current: 7.4 mA

The low maximum leakage current of 7.4 mA minimizes power loss in off-state conditions, improving energy efficiency.

No. of Terminals: 2

With only 2 terminals, this TRIAC is easy to integrate into circuits, simplifying design and reducing potential points of failure.

Package Style (Meter): SMALL OUTLINE

The small outline package style is advantageous for space-constrained applications, enabling more compact and efficient circuit designs.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C ensures reliable performance in harsh environments and extends the life of the device.

Trigger Device Type: SNUBBERLESS TRIAC

The snubberless design simplifies circuit configuration without compromising the ability to handle inductive loads, making it ideal for a wide range of applications.

Minimum Operating Temperature: -30 °C

The capability to operate at temperatures as low as -30 °C makes this TRIAC suitable for cold environments, broadening its application range.

Terminal Position: SINGLE

Single terminal position aids in minimal layout space on PCBs and simplifies routing for circuit connections.

Maximum RMS On-state Current: 20 A

A high maximum RMS on-state current of 20 A indicates strong performance and the ability to drive load currents effectively in various applications.

Maximum DC Gate Trigger Voltage: 1.3 V

The low gate trigger voltage of 1.3 V enables easy interfacing with control circuits, simplifying design integration.

Case Connection: MAIN TERMINAL 2

The main terminal connection enhances the device's capacity for heat dissipation, ensuring stable performance under load.

Repetitive Peak Off-state Voltage: 600 V

A repetitive peak off-state voltage of 600 V makes this TRIAC suitable for high-voltage applications, ensuring robust performance in demanding conditions.

Minimum Critical Rate of Rise of Commutation Voltage: 300 V/us

A minimum critical rate of rise of commutation voltage of 300 V/us provides the capability for fast switching applications, increasing the versatility of the TRIAC.

Maximum Holding Current: 35 mA

The low maximum holding current of 35 mA contributes to improved energy efficiency and allows for effective operation at lower power levels.

Technical Specifications

Triode For Alternating Current (TRIAC) T2035H-600G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

300 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

35 mA

JESD-30 Code:

R-PSSO-G2

Maximum Leakage Current:

7.4 mA

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

20 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

Trade Compliance

T2035H-600G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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