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STW20NC50

STMicroelectronics

STW20NC50 by STMicroelectronics

STW20NC50 by STMicroelectronics is an N-channel FET ideal for switching applications. It features a 500V breakdown voltage, 73.6A max pulsed drain current, and operates at up to 150 °C. Its robust design ensures efficient performance in power management systems.

Median Price

$5.244

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 20 parts In-Stock

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$5.244

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$2.622

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20

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$2.622

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Zilex Electronics Inc.

Canada . 13,357 parts In-Stock

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Vyrian

USA . 4,740 parts In-Stock

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ABC Electronics Ltd.

UK . 1,081 parts In-Stock

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Anansix

USA . 804 parts In-Stock

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Connector Distribution Corp

USA . 510 parts In-Stock

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510

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Right Parts Inc.

USA . 510 parts In-Stock

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510

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ACDS - Activité Composants Distribution Service

France . 324 parts In-Stock

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Digiode

USA . 140 parts In-Stock

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140

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ComSIT Distribution GmbH

Germany . 46 parts In-Stock

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MISTER SPROCKETS

USA . 30 parts In-Stock

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Microfarads

USA . 19 parts In-Stock

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PC Components Company LLC

USA . 10 parts In-Stock

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10

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LWI Electronics Inc

India . 6 parts In-Stock

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Q Components

USA . 5 parts In-Stock

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IDEA Electronic Components Group

UK . 2,058 parts In-Stock

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$1.167

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$1.051

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$1.167

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MKK Technologies

India . 524 parts In-Stock

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$2.195

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DigiPath Technology Company

USA . 524 parts In-Stock

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$2.195

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524

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Kepictronics

USA . 10,000 parts In-Stock

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,240 parts In-Stock

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Assy Fe

Spain . 1,116 parts In-Stock

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Parana Technologies

USA . 852 parts In-Stock

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$1.396

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Corphita

USA . 313 parts In-Stock

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Overview

Elevate your designs with the STW20NC50 from STMicroelectronics, a powerhouse in the realm of N-channel Power FETs. Renowned for exceptional reliability and performance, this transistor is perfect for demanding switching applications, delivering impressive efficiency and robust power handling up to 220W. With ST's commitment to quality and innovation, trust that the STW20NC50 will enhance your projects, ensuring longevity and high performance across various industries.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides good durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better efficiency and are ideal for high-speed switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances circuit protection by providing a path for inductive kickback, making it ideal for switching applications.

Transistor Application: SWITCHING

Specialized for switching applications, this FET ensures rapid on/off control, increasing efficiency in power management.

Minimum DS Breakdown Voltage: 500 V

A high breakdown voltage makes this FET a reliable choice for high-voltage applications, reducing the risk of failure.

Package Shape: RECTANGULAR

The rectangular shape optimizes space in circuit designs, allowing for efficient layout in electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust physical connections, ensuring stability and reliability in various mounting conditions.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation results in lower power loss and improved efficiency, enhancing overall performance in circuits.

Maximum Pulsed Drain Current (IDM): 73.6 A

The ability to handle high pulsed currents makes this FET suitable for demanding applications with short burst loads.

Avalanche Energy Rating (EAS): 960 mJ

A high avalanche energy rating delivers robust performance against transient voltage spikes, enhancing circuit reliability.

Maximum Drain Current (Abs) (ID): 18.4 A

With a maximum drain current of 18.4 A, this FET can handle significant loads, making it suitable for power applications.

No. of Terminals: 3

Having three terminals simplifies the design while ensuring adequate connections for robust functionality.

Maximum Power Dissipation (Abs): 220 W

A high power dissipation capability allows this FET to manage heat effectively, enhancing long-term reliability in circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure installation, improving heat dissipation and stability in applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology enables fast switching and low gate drive power requirements, making this FET efficient for various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this FET to perform in demanding environments without compromising reliability.

Transistor Element Material: SILICON

Silicon as the element material ensures good thermal conductivity and overall performance in electronic circuits.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable connections in applications.

Maximum Drain-Source On Resistance: 0.27 ohm

A low on-resistance minimizes conduction losses, enhancing overall energy efficiency in high-frequency applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and layout, making it easier to integrate into both new and existing systems.

Technical Specifications

Power Field Effect Transistors (FET) STW20NC50 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

960 mJ

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

18.4 A

Maximum Drain Current (ID):

18.4 A

Maximum Drain-Source On Resistance:

.27 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

73.6 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STW20NC50 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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