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STM802TDS6E

STMicroelectronics

STM802TDS6E by STMicroelectronics

STM802TDS6E by STMicroelectronics is a compact power management IC with a nominal voltage of 3.6V and operates b/w -40 °C to 85 °C. It features an 8-terminal gull-wing design, supporting voltages from 1.1V to 5.5V. Ideal for industrial applications, it ensures efficient power supply management in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 590 parts In-Stock

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590

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Vyrian

USA . 259 parts In-Stock

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259

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Anansix

USA . 127 parts In-Stock

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127

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 350 parts In-Stock

1+ parts

$17.195

100+ parts

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$15.475

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350

$17.195

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$15.475

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MKK Technologies

India . 99 parts In-Stock

1+ parts

$32.334

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99

$32.334

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DigiPath Technology Company

USA . 99 parts In-Stock

1+ parts

$32.334

100+ parts

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99

$32.334

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Corphita

USA . 4,278 parts In-Stock

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4,278

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Parana Technologies

USA . 23 parts In-Stock

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$20.559

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23

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$20.559

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Overview

Unlock unparalleled performance with the STM802TDS6E from STMicroelectronics, a leader in power management solutions. This compact and efficient IC is designed to optimize supply voltage across various applications, ensuring reliability in demanding industrial environments. With its robust temperature range and surface mount design, it seamlessly integrates into your systems, delivering exceptional energy efficiency and long-lasting durability that you can trust. Transform your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body provides good durability, thermal stability, and resistance to environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easier integration into compact designs, supporting high-density PCB layouts and automated assembly processes.

Package Shape: SQUARE

The square package shape optimizes space on the PCB, making it easier to design around other components while maintaining efficient performance.

Nominal Supply Voltage (Vsup): 3.6 V

A nominal supply voltage of 3.6 V ensures compatibility with a wide range of power sources and typical components in electronic circuits.

Power Supplies (V): 3.3/5

Supporting both 3.3V and 5V power supplies provides flexibility in system design, allowing it to fit into diverse applications.

No. of Terminals: 8

Having 8 terminals facilitates various functionalities while keeping the integration process straightforward for designers and engineers.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile design are ideal for space-constrained applications, providing high performance in minimal real estate.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C ensures reliability in industrial environments where temperature fluctuations may occur.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this IC is suitable for harsh environments, enhancing its usability in extreme conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides reliable solderability and protection against oxidation, ensuring longevity and performance.

Terminal Position: DUAL

Dual terminal positioning allows for versatile PCB layouts, helping in easier routing and design strategies.

Maximum Seated Height: 1.1 mm

A low seated height of 1.1 mm is beneficial for slim applications, contributing to the overall compactness of the device.

Width (mm): 3 mm

At just 3 mm wide, this component can easily fit into compact designs, making it suitable for modern electronics.

Other IC type: POWER SUPPLY MANAGEMENT CIRCUIT

As a power supply management circuit, it enhances the efficiency and reliability of power distribution in electronic devices.

Minimum Supply Voltage (Vsup): 1.1 V

The capability to operate at a minimum supply voltage of 1.1 V allows it to function in low-power applications, extending its range of applications.

Length: 3 mm

The compact length of 3 mm complements its width, making it a highly space-efficient choice for tight PCB layouts.

Nominal Threshold Voltage (V): +3.075V

A nominal threshold voltage of +3.075V makes the IC effective in regulating power levels to protect connected components.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures that this IC can withstand rigorous operating conditions, making it suitable for various industrial applications.

Maximum Supply Current (Isup): 0.06 mA

A low maximum supply current of just 0.06 mA contributes to energy efficiency, making it an excellent choice for battery-powered devices.

Terminal Form: GULL WING

The gull wing terminal form provides excellent soldering characteristics and ease of handling during manufacturing and assembly.

Terminal Pitch: 0.65 mm

A terminal pitch of 0.65 mm is conducive to high-density designs, allowing more components to fit within a limited space.

Maximum Supply Voltage (Vsup): 5.5 V

Supporting a maximum supply voltage of 5.5 V ensures compatibility with a wide range of devices, enhancing its versatility.

Technical Specifications

Power Management ICs STM802TDS6E attributes and parameters. Explore more Power Management ICs devices from STMicroelectronics

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 3.075V

Adjustable Threshold:

NO

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Power Supplies (V):

3.3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.06 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.1 V

Nominal Supply Voltage (Vsup):

3.6 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+3.075V

Width (mm):

3 mm

Trade Compliance

STM802TDS6E Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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