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STM32MP133DAG7T

STMicroelectronics

STM32MP133DAG7T by STMicroelectronics

STM32MP133DAG7T by STMicroelectronics is a 32-bit RISC microprocessor with a max clock frequency of 48 MHz and integrated cache. It operates b/w -40 °C to 105 °C, making it ideal for industrial applications. Its low power mode and extensive I/O support enhance versatility in embedded systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,565 parts In-Stock

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Anansix

USA . 2,311 parts In-Stock

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Vyrian

USA . 2,294 parts In-Stock

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AZTECH Wire

Italy . 126 parts In-Stock

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$16.910

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Corphita

USA . 1,217 parts In-Stock

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Overview

Unlock the potential of your next project with the STM32MP133DAG7T microprocessor from STMicroelectronics, a leader in innovation and quality. Designed for versatility, this powerful processor excels in applications ranging from industrial automation to smart home devices. Experience unparalleled performance with low power consumption, ensuring efficiency without compromising speed. Trust in STMicroelectronics’ legacy of excellence to elevate your solutions and drive transformative results!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides durability and good thermal performance, making it suitable for various operating environments.

Integrated Cache: YES

Having an integrated cache improves processing speed and efficiency by reducing access times for frequently used data.

Surface Mount: YES

Surface mount technology allows for compact designs and easier integration into modern electronic circuits, saving space.

Maximum Supply Voltage: 1.38 V

A maximum supply voltage of 1.38V contributes to lower power consumption, which is critical for battery-operated devices.

On Chip Data RAM Width: 8

With a data RAM width of 8 bits, this processor is capable of handling a variety of data types, improving overall functionality.

Address Bus Width: 26

A 26-bit address bus allows the processor to access a larger memory space, enhancing performance for memory-intensive applications.

Package Shape: SQUARE

The square package shape provides a symmetrical design that can be easily integrated into various layouts.

Bit Size: 32

A 32-bit architecture enhances computational capabilities, allowing for more efficient processing of complex operations.

No. of Terminals: 289

A high number of terminals supports numerous I/O operations, facilitating better connectivity and versatility.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

This package style allows for high-density connections in limited space, beneficial for modern electronics.

Minimum Supply Voltage: 1.32 V

The minimum supply voltage of 1.32V ensures compatibility with low-power applications, extending device battery life.

Maximum Operating Temperature: 105 °C

An operating temperature of 105 °C ensures reliable performance even in high-heat environments.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this processor is suitable for extreme conditions, expanding its application range.

Terminal Position: BOTTOM

Bottom terminal placement is advantageous for heat dissipation and provides a compact footprint.

Maximum Seated Height: 1.2 mm

A low seated height ensures compatibility with compact designs and reduced overall profile in devices.

RAM Words: 172032

A sizable RAM word count enhances data processing capabilities, making the processor fit for demanding applications.

Width: 9 mm

A compact width of 9 mm allows for space-efficient designs critical in modern electronics.

Boundary Scan: YES

Boundary scan capability supports advanced testing and debugging, significantly reducing development time.

External Data Bus Width: 16

A 16-bit external data bus enables efficient data transfer rates, improving overall performance in data-heavy applications.

Maximum Clock Frequency: 48 MHz

A maximum clock frequency of 48 MHz allows for fast processing speeds, suitable for real-time applications.

Length: 9 mm

The 9 mm length contributes to a compact design, helping fit into smaller devices without compromising performance.

Peripheral IC Type: MICROPROCESSOR, RISC

As a RISC microprocessor, it offers reduced instruction set architecture, resulting in higher efficiency and performance.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed operation, essential for modern processors.

Terminal Form: BALL

Ball terminal form enhances connectivity and reliability, facilitating easier assembly on PCBs.

Maximum Supply Current: 268 mA

A maximum supply current of 268 mA indicates efficient power use, balancing performance with energy consumption.

Nominal Supply Voltage: 1.35 V

A nominal supply voltage of 1.35V optimizes energy efficiency, ideal for portable and embedded applications.

No. of DMA Channels: 56

Having 56 DMA channels enables efficient data handling without processor involvement, improving multitasking capabilities.

No. of Serial I/Os: 10

With 10 serial I/O channels, this processor supports versatile communication options for various devices.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch allows for higher density component placement, enhancing design flexibility.

Format: FIXED POINT

Fixed point format processing allows for efficient calculations in applications where floating-point arithmetic is unnecessary.

Speed: 1000 rpm

Operating at 1000 rpm makes this processor suitable for applications requiring consistent and reliable performance.

Low Power Mode: YES

The low power mode feature is ideal for energy-constrained environments, extending battery life in portable devices.

Technical Specifications

Microprocessors STM32MP133DAG7T attributes and parameters. Explore more Microprocessors devices from STMicroelectronics

Specs

Address Bus Width:

26

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

48 MHz

External Data Bus Width:

16

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B289

Length:

9 mm

Low Power Mode:

YES

No. of DMA Channels:

56

No. of Serial I/Os:

10

No. of Terminals:

289

On Chip Data RAM Width:

8

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA289,17X17,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

RAM Words:

172032

Maximum Seated Height:

1.2 mm

Speed:

1000 rpm

Maximum Supply Current:

268 mA

Maximum Supply Voltage:

1.38 V

Minimum Supply Voltage:

1.32 V

Nominal Supply Voltage:

1.35 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

9 mm

Peripheral IC Type:

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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