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STM32MP133DAE7T

STMicroelectronics

STM32MP133DAE7T by STMicroelectronics

STM32MP133DAE7T by STMicroelectronics is a 32-bit RISC microprocessor with a max clock frequency of 48 MHz and operates b/w -40 °C to 105 °C. It features integrated cache, 172032 RAM words, and supports low power modes. Ideal for embedded applications requiring efficient processing in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,570 parts In-Stock

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4,570

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Anansix

USA . 2,853 parts In-Stock

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2,853

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Vyrian

USA . 2,324 parts In-Stock

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2,324

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 1,083 parts In-Stock

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$14.400

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1,083

$14.400

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Corphita

USA . 1,306 parts In-Stock

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Overview

Elevate your projects with the STM32MP133DAE7T microprocessor from STMicroelectronics, a hallmark of quality and reliability. Designed for efficiency, it excels in diverse applications from industrial automation to smart home devices, offering outstanding performance in compact designs. Benefit from its low power consumption and robust temperature range, ensuring seamless operation even in demanding environments. Choose STM32MP133DAE7T and empower your innovations with unmatched reliability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures reliability and robustness for various applications.

Integrated Cache: YES

The presence of integrated cache enhances processing speed and efficiency.

Surface Mount: YES

Surface mount technology allows for compact circuit design and improved performance.

Maximum Supply Voltage: 1.38 V

Allows for flexible power management, catering to low-power applications.

On Chip Data RAM Width: 8

An 8-bit data RAM width supports efficient data handling for diverse processing tasks.

Address Bus Width: 26

A wider address bus enables access to a larger memory space, enhancing performance.

Package Shape: SQUARE

Square packaging provides a uniform footprint, simplifying PCB layout and assembly.

Bit Size: 32

A 32-bit architecture allows for improved performance and support for modern applications.

No. of Terminals: 289

A higher number of terminals allows for greater connectivity options and flexibility.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This package style is space-efficient, making it ideal for compact devices.

Minimum Supply Voltage: 1.32 V

Lower voltage requirements contribute to energy efficiency and thermal management.

Maximum Operating Temperature: 105 °C

High-temperature tolerance ensures reliability in demanding environments.

Minimum Operating Temperature: -40 °C

Ability to operate in low temperatures makes it suitable for harsh conditions.

Terminal Position: BOTTOM

Bottom terminal positioning aids in effective thermal management and space utilization.

Maximum Seated Height: 1.7 mm

Low profile allows for more compact device design, fitting into tighter spaces.

RAM Words: 172032

A substantial RAM capacity facilitates efficient processing and multitasking.

Width: 14 mm

A compact width allows for space-efficient designs in various electronic applications.

Boundary Scan: YES

Supports boundary scan testing, improving manufacturing quality and reducing production costs.

External Data Bus Width: 16

A 16-bit external data bus enables efficient data transfer rates and broad compatibility.

Maximum Clock Frequency: 48 MHz

A higher clock frequency improves processing speed for demanding applications.

Length: 14 mm

The compact length complements modern electronics' requirement for smaller components.

Peripheral IC Type: MICROPROCESSOR, RISC

RISC architecture optimizes performance for a wide range of applications.

Technology: CMOS

CMOS technology ensures low power consumption while maintaining high performance.

Terminal Form: BALL

Ball terminal formation enhances solder joint reliability and simplifies mounting.

Maximum Supply Current: 268 mA

Moderate current consumption aids in energy efficiency across various applications.

Nominal Supply Voltage: 1.35 V

Optimized voltage improves power efficiency without sacrificing performance.

No. of DMA Channels: 56

A high count of DMA channels allows for efficient data handling and processing.

No. of Serial I/Os: 10

Multiple serial I/O options enhance connectivity and compatibility with various peripherals.

Terminal Pitch: 0.8 mm

Fine pitch terminal design permits closer terminal spacing, suitable for dense layouts.

Format: FIXED POINT

Fixed point format allows for precise and efficient mathematical operations.

Speed: 1000 rpm

A good operational speed rating indicates reliability in dynamic applications.

Low Power Mode: YES

This mode enhances energy efficiency, making it suitable for battery-powered devices.

Technical Specifications

Microprocessors STM32MP133DAE7T attributes and parameters. Explore more Microprocessors devices from STMicroelectronics

Specs

Address Bus Width:

26

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

48 MHz

External Data Bus Width:

16

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B289

Length:

14 mm

Low Power Mode:

YES

No. of DMA Channels:

56

No. of Serial I/Os:

10

No. of Terminals:

289

On Chip Data RAM Width:

8

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA289,17X17,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

RAM Words:

172032

Maximum Seated Height:

1.7 mm

Speed:

1000 rpm

Maximum Supply Current:

268 mA

Maximum Supply Voltage:

1.38 V

Minimum Supply Voltage:

1.32 V

Nominal Supply Voltage:

1.35 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

14 mm

Peripheral IC Type:

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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