Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
STD20NF20 by STMicroelectronics is a N-CHANNEL FET with 200V DS breakdown voltage and 18A max drain current. Ideal for switching applications, it features a built-in diode, 72A pulsed drain current, and 0.125 ohm on-resistance. Suitable for enhancement mode operation in small outline packages with matte tin finish.
Median Price
$1.820
Lifecycle Status
Suppliers In-Stock
25
In-Stock Inventory
1k+
Farnell
1+ parts
$1.530
100+ parts
$0.917
1k+ parts
$0.608
10k+ parts
$0.599
Chip1Stop
$2.890
$1.280
$1.020
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Mouser Electronics
$3.100
$1.390
$1.100
$1.010
DigiKey
$1.385
$1.118
Arrow
$0.643
Verical
$0.642
Avnet
Future Electronics
$0.970
Element14
$1.850
$1.410
Newark
$1.790
$1.380
EBV Elektronik
RS (Exports)
$1.936
$1.657
Nova Conductors
$1.342
Digiode
$2.100
IBS Electronics
$2.425
$0.888
Maritex
$8.564
$2.071
Vyrian
Chip Stock
Cyclops Electronics Ltd
RLX Solution Inc.
Schukat
$1.946
$1.568
Inventory MP
Bristol Electronics
Anansix
Fibra_Brandt Electronic GMBH
Semicontronic
$0.500
$0.488
$0.485
Ampacity Inc.
Argo Parts USA
$1.167
Continental Prestige Electronics
$1.144
IDEA Electronic Components Group
$1.267
$1.140
Corohmni
$1.299
Aztec Data Supply Inc.
$1.300
Advanced Electronics
$1.338
$1.271
Netroflash
$1.315
Corphita
$1.989
Andel Nordic
$2.333
$2.240
MKK Technologies
$2.382
DigiPath Technology Company
Microchip USA
$6.839
RC Electronics
Epart123
$1.250
GreenTree Electronics
Futuretech Components
Authorized Procurement Solutions
Glotronic Ltd.
A-Z Elektronik GmbH
Lixinc
Alle Elektronik GmbH
XScomponents
Parana Technologies
$1.515
Kepictronics
The plastic/epoxy package body material provides good insulation and protection for the internal components of the FET, ensuring durability and reliability.
The high minimum breakdown voltage allows for use in high voltage applications, making this FET suitable for a wide range of power switching tasks.
The high maximum pulsed drain current rating means this FET can handle heavy current spikes, making it ideal for power switching applications with high transient loads.
With a high maximum power dissipation rating, this FET can handle high power levels without overheating, ensuring reliable operation in demanding environments.
The high maximum operating temperature allows this FET to be used in high temperature environments without compromising performance, making it a versatile choice for various applications.
Power Field Effect Transistors (FET) STD20NF20 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
Avalanche Energy Rating (EAS):
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
STD20NF20 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - IPG-PWR/14/8552 23/Jun/2014
PCN Packaging - Mult Dev Inner Box Chg 9/Dec/2021 Box Label Chg 28/Jul/2016
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
BSS138
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .22 A; Package Shape: RECTANGULAR;
LL4148
Continental Device India
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Diodes Incorporated
1N4148WS
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Kec
M85049/85-08W02
Glenair
CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;
USBLC6-2SC6
STMicroelectronics
USBLC6-2SC6 by STMicroelectronics is a unidirectional transient voltage suppressor diode with a breakdown voltage of 6V. It has a max clamping voltage of 17V and operates in temperatures ranging from -40 to 125°C. This device, with dual terminals and matte tin finish, is ideal for protecting sensitive electronics from voltage spikes in various applications.
BAV99
Electronic Devices
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS84PH6327XTSA2
Infineon Technologies
BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.
RC0603FR-071KL
Yageo
Yageo's RC0603FR-071KL is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in electronics, it operates b/w -55 to 155 °C with a temperature coefficient of 100 ppm/°C.
2N2222A
Digitron Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
M24308/2-1F
Souriau-sunbank Connection Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body Length: 1.228 inch; Mounting Type: CABLE AND PANEL; Termination Type: CRIMP;
EU2B-YS2J03C
Idec
ROTARY SWITCH;
Shanghai Lunsure Electronic Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
SMBJ18CA
Transpro Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Breakdown Voltage: 21.1 V; Maximum Clamping Voltage: 29.2 V;
Multicomp Pro
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CM
Intersil
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
CC0603KRX7R9BB103
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
Diotec Semiconductor Ag
STW4N150
STW4N150 by STMicroelectronics is a N-CHANNEL FET with 1500V DS breakdown voltage, ideal for SWITCHING applications. It features 12A max pulsed drain current and 350mJ avalanche energy rating. The transistor operates in ENHANCEMENT MODE with 160W max power dissipation, making it suitable for high-power switching circuits.
BUK9M85-60EX
Nexperia
BUK9M85-60EX by Nexperia is a N-channel power FET with 60V DS breakdown voltage and 12.8A max drain current. Ideal for switching applications, it features a built-in diode, 0.085 ohm max on resistance, and 51A pulsed drain current. Suitable for surface mount with Gull Wing terminals in a small outline package style.
IRF9530
Harris Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Case Connection: DRAIN;
G3R450MT17J
Genesic Semiconductor
G3R450MT17J by Genesic Semiconductor is a N-CHANNEL Power FET with 1700V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 12A and EAS of 59mJ. With SILICON CARBIDE material, it operates b/w -55 to 175 °C and has 0.63 ohm Drain-Source Resistance.
2N7000
Topaz Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: Tin/Lead (Sn/Pb);
FDS4465
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Time At Peak Reflow Temperature (s): 30; Operating Mode: ENHANCEMENT MODE;
IRF530A
Onsemi
The Onsemi IRF530A is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 14A Max ID. Ideal for SWITCHING applications, it features a 0.11 ohm Drain-Source Resistance and operates in ENHANCEMENT MODE up to 175°C.
IRFR4104TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; JESD-30 Code: R-PSSO-G2; Maximum Drain-Source On Resistance: .0055 ohm;
BSP170PH6327XTSA1
Infineon's BSP170PH6327XTSA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 7.6A IDM, and 0.3 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and 150°C max operating temp.
MSC035SMA170B
Microsemi
Power Field-Effect Transistors;
IRFS3306TRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 230 W; Maximum Drain Current (Abs) (ID): 160 A; Package Style (Meter): SMALL OUTLINE;
IRFP4468PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Transistor Application: SWITCHING; JESD-609 Code: e3;
IRFZ44NSTRR
International Rectifier Hirel Products
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Maximum Pulsed Drain Current (IDM): 160 A; Minimum DS Breakdown Voltage: 55 V;
IRF640NLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Pulsed Drain Current (IDM): 72 A; JEDEC-95 Code: TO-262AA;
CPH6354-TL-W
Onsemi's CPH6354-TL-W is a P-CHANNEL FET with 60V DS breakdown voltage, 16A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates in SMALL OUTLINE package style.
IRF3415STRLPBF
IRF3415STRLPBF by Infineon is a N-CHANNEL FET with 150V DS Breakdown Voltage and 43A Max Drain Current. It is used for SWITCHING applications, featuring a built-in DIODE, 0.042 ohm Max RDS(on), and 150A IDM. The transistor operates in ENHANCEMENT MODE, has a GULL WING terminal form, and comes in a SMALL OUTLINE package style.
NTD2955T4G
NTD2955T4G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 18A.
IRLML0100TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: TO-236AB;
IRF9540PBF
Vishay Intertechnology
Vishay Intertechnology's IRF9540PBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W, -55 to 175°C operating temperature range, and 0.2 ohm Drain-Source On Resistance.
IRF4905PBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JESD-30 Code: R-PSFM-T3; Operating Mode: ENHANCEMENT MODE;
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STD25NF10LT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; JEDEC-95 Code: TO-252AA; No. of Elements: 1;
STD2NK100Z
STD2NK100Z by STMicroelectronics is a N-CHANNEL FET with 1000V DS breakdown voltage, ideal for switching applications. It features a max IDM of 7.4A and EAS of 170mJ, operating in enhancement mode with a max power dissipation of 70W. Suitable for surface mount design, it has a TO-252 package style and operates b/w -55 to 150°C.
STD25NF20
STD25NF20 by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage and 18A ID. Ideal for SWITCHING applications, it features a built-in DIODE, 72A IDM, and 0.125 ohm Drain-Source On Resistance. Suitable for ENHANCEMENT MODE operation in automotive systems (AEC-Q101).
STD20NF06LT4
STD20NF06LT4 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage and 96A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.05 ohm RDS(on), and 225mJ EAS rating. Suitable for surface mount with GULL WING terminals, operating from -55 to 175 °C.
STD25NF10LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 25 A;
STD25NF10T4
STD25NF10T4 by STMicroelectronics is a N-CHANNEL FET with 100V DS breakdown voltage and 25A max drain current. Ideal for switching applications, it features a built-in diode, 100W power dissipation, and operates in enhancement mode. Suitable for surface mount assembly, this MOSFET has a max operating temperature of 175°C.
STD2NK90ZT4
STD2NK90ZT4 by STMicroelectronics is a N-CHANNEL FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features 8.4A Max Pulsed Drain Current and 150mJ Avalanche Energy Rating, operating in ENHANCEMENT MODE at up to 150°C.
STD2N105K5
STD2N105K5 by STMicroelectronics is a N-CHANNEL Power FET with 1.5A max drain current and 60W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as power supplies and motor control systems.
STD2N80K5
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
STD25N10F7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
STD20NF06T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; JESD-609 Code: e3; Maximum Operating Temperature: 175 Cel;
STD2N95K5
STD2N95K5 by STMicroelectronics is a N-CHANNEL Power FET with 950V DS Breakdown Voltage. It's used for SWITCHING applications, featuring 8A IDM and 50mJ EAS ratings. This ENHANCEMENT MODE transistor has a max power dissipation of 45W in a RECTANGULAR package style.
STD26P3LLH6
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 2;
STD20NF06LAG
STD2NC60
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STD2NC60-1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Terminal Form: THROUGH-HOLE; No. of Terminals: 3;
STD25P03LT4G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; No. of Elements: 1; Terminal Position: SINGLE;
STD24N06LT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; JESD-30 Code: R-PSSO-G2; Package Style (Meter): SMALL OUTLINE;
STD20NE03LT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Pulsed Drain Current (IDM): 100 A; Case Connection: DRAIN;
Supply Digital Components
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