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P0109DA1AA3

STMicroelectronics

P0109DA1AA3 by STMicroelectronics

P0109DA1AA3 by STMicroelectronics is a SCR with max DC gate trigger current of 0.001 mA, non-repetitive peak on-state current of 8 A, and max on-state current of 0.5 A. It is used in applications requiring reliable switching capabilities in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,821 parts In-Stock

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Anansix

USA . 790 parts In-Stock

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790

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 744 parts In-Stock

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744

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Digiode

USA . 500 parts In-Stock

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500

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IDEA Electronic Components Group

UK . 344 parts In-Stock

1+ parts

$1.934

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$1.740

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344

$1.934

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$1.740

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MKK Technologies

India . 1,516 parts In-Stock

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$3.636

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$3.636

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DigiPath Technology Company

USA . 1,516 parts In-Stock

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$3.636

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1,516

$3.636

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AZTECH Wire

Italy . 476 parts In-Stock

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$13.610

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476

$13.610

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Kepictronics

USA . 20,000 parts In-Stock

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Perfect Parts

USA . 8,327 parts In-Stock

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Corphita

USA . 4,823 parts In-Stock

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Parana Technologies

USA . 71 parts In-Stock

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$2.312

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Overview

Enhance your electronic designs with the P0109DA1AA3 by STMicroelectronics, a top-tier manufacturer known for quality and reliability. As a Silicon Controlled Rectifier (SCR), this product offers superior performance in a variety of applications. With a maximum DC Gate Trigger Current of 0.001 mA and a Non Repetitive Peak On-state Current of 8 A, this SCR is designed to deliver exceptional results. Experience the value and benefits of this single configuration SCR with its maximum RMS On-state Current of 0.8 A and Repetitive Peak Off-state Voltage of 400 V. Trust STMicroelectronics to provide cutting-edge solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the SCR lightweight and durable, making it suitable for various applications.

Maximum DC Gate Trigger Current: 0.001 mA

The low maximum DC gate trigger current ensures efficient and precise control over the SCR, making it reliable for sensitive electronic circuits.

Configuration: SINGLE

The single configuration simplifies the installation and integration of the SCR into different electronic systems.

Non Repetitive Peak On-state Current: 8A

The high non-repetitive peak on-state current capability allows the SCR to handle sudden high current surges without getting damaged.

Package Shape: ROUND

The round package shape provides better thermal management and allows for easy mounting in circular housing or PCB layouts.

Terminal Form: WIRE

The wire terminal form enables easy connections and offers flexibility in the installation of the SCR in various electronic setups.

Maximum On-state Current: 0.5A

The maximum on-state current rating of 0.5A indicates the SCR's ability to handle moderate current loads efficiently.

Maximum Leakage Current: 6mA

The low maximum leakage current ensures minimal power loss when the SCR is in the off state, contributing to energy efficiency.

Repetitive Peak Reverse Voltage: 400V

The high repetitive peak reverse voltage rating of 400V ensures the SCR's reliable operation in circuits where reverse voltage spikes may occur.

No. of Terminals: 3

The three-terminal configuration offers flexibility in wiring and connectivity options for different circuit designs.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact form factor and efficient heat dissipation, making it suitable for space-constrained applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature rating of 125 °C allows the SCR to operate reliably in demanding environmental conditions.

Trigger Device Type: SCR

Being an SCR, the trigger device type ensures reliable and stable switching performance under varying load conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature rating of -40 °C makes the SCR suitable for use in cold environments without compromising performance.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and installation, enhancing the overall ease of use and integration.

Maximum RMS On-state Current: 0.8A

The maximum RMS on-state current rating of 0.8A showcases the SCR's capability to handle continuous current loads efficiently.

Maximum DC Gate Trigger Voltage: 0.8V

The low maximum DC gate trigger voltage requirement of 0.8V ensures efficient triggering and control over the SCR with minimal power consumption.

Repetitive Peak Off-state Voltage: 400V

The repetitive peak off-state voltage rating of 400V indicates the SCR's ability to withstand voltage spikes in off-state conditions without breakdown.

Minimum Critical Rate of Rise of Off-state Voltage: 75 V/us

The high minimum critical rate of rise of off-state voltage rating ensures the SCR's robustness against rapid voltage changes, enhancing reliability.

Maximum Holding Current: 5mA

The low maximum holding current ensures that the SCR remains in the on state reliably even under low current conditions, preventing unintentional switching.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0109DA1AA3 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

75 V/us

Maximum DC Gate Trigger Current:

.001 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

Maximum Leakage Current:

6 mA

Non Repetitive Peak On-state Current:

8 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

P0109DA1AA3 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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