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P0102MA1AA3

STMicroelectronics

P0102MA1AA3 by STMicroelectronics

P0102MA1AA3 by STMicroelectronics is a SCR with max DC gate trigger current of 0.2mA, non-repetitive peak on-state current of 8A, and max repetitive peak reverse voltage of 600V. It is used in applications requiring reliable switching at temperatures ranging from -40 to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Lantek

USA . 15,000 parts In-Stock

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15,000

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Digiode

USA . 3,809 parts In-Stock

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3,809

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Vyrian

USA . 3,612 parts In-Stock

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3,612

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Anansix

USA . 2,808 parts In-Stock

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2,808

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 432 parts In-Stock

1+ parts

$4.369

100+ parts

-

1k+ parts

$3.932

10k+ parts

-

432

$4.369

-

$3.932

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MKK Technologies

India . 419 parts In-Stock

1+ parts

$8.216

100+ parts

-

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419

$8.216

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DigiPath Technology Company

USA . 419 parts In-Stock

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$8.216

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419

$8.216

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AZTECH Wire

Italy . 860 parts In-Stock

1+ parts

$16.060

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860

$16.060

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Component Stockers USA

USA . 585 parts In-Stock

1+ parts

$99.990

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585

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 16,449 parts In-Stock

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16,449

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GreenTree Electronics

Israel . 15,000 parts In-Stock

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15,000

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,113 parts In-Stock

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6,113

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Corphita

USA . 4,608 parts In-Stock

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4,608

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Parana Technologies

USA . 1,532 parts In-Stock

1+ parts

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$5.224

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1,532

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$5.224

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Overview

Unlock the power of precision and reliability with the P0102MA1AA3 by STMicroelectronics. As a trusted manufacturer in the industry, STMicroelectronics delivers top-notch Silicon Controlled Rectifiers (SCR) that guarantee superior performance and durability. Ideal for a wide range of applications, this SCR offers customers unbeatable value, efficiency, and peace of mind. Say goodbye to unreliable products and hello to a new standard of excellence with the P0102MA1AA3 from STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and protection for the internal components of the SCR.

Maximum DC Gate Trigger Current: 0.2 mA

The low gate trigger current allows for precise control over when the SCR switches on, making it suitable for applications requiring low power consumption.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making the SCR easy to use and integrate into a system.

Non Repetitive Peak On-state Current: 8 A

The high non repetitive peak on-state current capability of 8A allows the SCR to handle sudden spikes in current without damage, making it suitable for high-power applications.

Package Shape: ROUND

The round package shape facilitates heat dissipation and compact design, making it suitable for applications where space is limited.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides strong mechanical connections, ensuring reliability in harsh operating conditions.

Maximum On-state Current: 0.5 A

The maximum on-state current capacity of 0.5A allows the SCR to handle moderate current requirements, making it versatile for a range of applications.

Maximum Leakage Current: 0.1 mA

The low leakage current of 0.1mA ensures minimal power loss when the SCR is in the off-state, resulting in energy efficiency.

Repetitive Peak Reverse Voltage: 600 V

The high repetitive peak reverse voltage rating of 600V allows the SCR to withstand reverse voltage conditions without breakdown, ensuring robust performance.

No. of Terminals: 3

The 3-terminal configuration provides flexibility in wiring and connection options, making the SCR suitable for various circuit designs.

Package Style: CYLINDRICAL

The cylindrical package style allows for easy mounting and installation, making the SCR user-friendly for technicians and engineers.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures reliable performance in demanding environments with elevated temperatures.

Trigger Device Type: SCR

The SCR trigger device type offers precise control over the switching behavior of the device, making it suitable for applications requiring accurate power management.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows the SCR to operate in cold environments without performance degradation, increasing its versatility.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability of the connections.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy PCB mounting and maintenance, making the SCR convenient to use in various electronic applications.

Maximum RMS On-state Current: 0.8 A

The maximum RMS on-state current of 0.8A allows the SCR to handle continuous current flow without overheating, ensuring stable operation.

Maximum DC Gate Trigger Voltage: 0.8 V

The low gate trigger voltage of 0.8V minimizes power consumption during switching, making the SCR energy-efficient.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage rating of 600V ensures reliable isolation between the SCR and the load, enhancing safety in high-voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 75 V/us

The minimum critical rate of rise of off-state voltage of 75V/us ensures rapid response to voltage fluctuations, protecting the SCR from damage due to sudden surges.

Maximum Holding Current: 5 mA

The maximum holding current of 5mA prevents the SCR from turning off unintentionally, ensuring stable operation in applications requiring continuous current flow.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0102MA1AA3 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

75 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

8 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0102MA1AA3 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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