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M87C257-10XF3

STMicroelectronics

M87C257-10XF3 by STMicroelectronics

M87C257-10XF3 by STMicroelectronics is a 32Kx8 UVPROM with a max access time of 100 ns, ideal for automotive applications. It operates asynchronously at a nominal voltage of 5V and features a ceramic, metal-sealed package. With a wide temp range from -40 °C to 125 °C, it ensures reliability in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,649 parts In-Stock

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4,649

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Vyrian

USA . 4,116 parts In-Stock

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4,116

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Anansix

USA . 2,786 parts In-Stock

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2,786

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 663 parts In-Stock

1+ parts

$4.544

100+ parts

-

1k+ parts

$4.089

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663

$4.544

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$4.089

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MKK Technologies

India . 2,010 parts In-Stock

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$8.544

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2,010

$8.544

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DigiPath Technology Company

USA . 2,010 parts In-Stock

1+ parts

$8.544

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2,010

$8.544

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Corphita

USA . 2,543 parts In-Stock

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2,543

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Parana Technologies

USA . 641 parts In-Stock

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$5.433

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641

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$5.433

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Overview

Unlock the potential of your projects with the M87C257-10XF3 EPROM from STMicroelectronics, a trusted name in high-quality semiconductor solutions. Engineered for reliability and performance, this robust memory chip excels in automotive applications and beyond, operating seamlessly in extreme temperatures. Enjoy peace of mind with its durable ceramic packaging and advanced technology, ensuring fast access times and energy efficiency—empowering your innovations with superior dependability and value.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package offers excellent durability and resistance to environmental factors, making this EPROM reliable for automotive applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCBs, facilitating compact designs in automotive systems.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies circuit design, allowing for faster read access without the need for external clocks.

Input/Output Type: COMMON

Using common I/O types ensures compatibility with a wide range of interfaces, simplifying integration with other components.

Nominal Supply Voltage / Vsup: 5 V

A standard supply voltage of 5V is widely used, making this EPROM easy to implement in various systems without requiring special voltage regulators.

Power Supplies (V): 5

The need for a single 5V power supply simplifies design and reduces component count in automotive electronics.

No. of Terminals: 28

With 28 terminals, this EPROM provides ample connection points for data, power, and control signals, ensuring flexibility in circuit design.

Package Style (Meter): IN-LINE, WINDOW

The in-line, window style allows for easy identification and programming of the EPROM, enhancing usability in development and production.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this EPROM is suitable for high-temperature environments typical in automotive applications.

Organization: 32Kx8

The 32Kx8 organization allows efficient data storage for applications requiring moderate memory capacity and fast access times.

Output Characteristics: 3-STATE

3-state output allows for multiple devices to share the same bus, enhancing flexibility and reducing signal interference in multi-device environments.

Minimum Operating Temperature: -40 °C

The capability to operate at temperatures as low as -40 °C ensures reliable performance in extreme weather conditions common in automotive scenarios.

Terminal Finish: MATTE TIN

Matte tin terminal finishes provide excellent solderability and corrosion resistance, enhancing the longevity and reliability of the component.

Terminal Position: DUAL

Dual terminal positioning provides multiple mounting options, improving PCB layout flexibility and ensuring robustness in various applications.

Maximum Seated Height: 5.72 mm

A seated height of 5.72 mm allows for easy integration into various enclosure designs, maintaining a low profile in compact assemblies.

Width: 15.24 mm

The width of 15.24 mm is compatible with standard PCB layouts, making it a straightforward choice for designers.

Minimum Supply Voltage (Vsup): 4.75 V

The minimum supply voltage of 4.75V provides flexibility for operation under various power supply conditions, enhancing system reliability.

Length: 36.92 mm

The size of 36.92 mm helps in maintaining a compact design while ensuring sufficient space for the required circuitry.

Temperature Grade: AUTOMOTIVE

Being classified as automotive-grade ensures that this EPROM meets stringent reliability and performance criteria critical for automotive applications.

Technology: CMOS

CMOS technology ensures low power consumption and high speed, making the product suitable for a wide range of applications, including battery-operated devices.

Parallel or Serial: PARALLEL

Parallel access facilitates faster data transfer rates compared to serial, increasing overall system efficiency for time-critical applications.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust mechanical support and is ideal for applications requiring high durability.

Maximum Supply Current: 30 mA

A maximum supply current of 30 mA ensures low power consumption, making this EPROM energy-efficient for various electronic systems.

No. of Words: 32768 words

With 32768 words of addressable memory, this device offers sufficient capacity for a range of automotive data storage applications.

Memory Width: 8

An 8-bit memory width is suitable for standard data processing, providing an optimal balance between data handling and complexity.

Terminal Pitch: 2.54 mm

The 2.54 mm terminal pitch is standard in many PCB designs, simplifying compatibility and reducing manufacturing complexity.

No. of Words Code: 32K

The ability to address 32K words offers adequate capacity for many automotive control applications, without overcomplication.

Maximum Supply Voltage (Vsup): 5.25 V

The maximum supply voltage of 5.25 V provides a small tolerance range, ensuring reliable operation while minimizing the risk of damage.

Memory Density: 262144 bit

A memory density of 262144 bits allows for efficient storage of larger data sets in automotive applications where space is a premium.

Memory IC Type: UVPROM

As a UVPROM, this memory type provides the advantage of reprogrammability via ultraviolet light, making it useful for prototyping and iterative developments.

Maximum Standby Current: 0.0001 Amp

A very low maximum standby current minimizes power usage during inactive periods, enhancing energy efficiency in battery-powered applications.

Maximum Access Time: 100 ns

With a maximum access time of 100 ns, this EPROM ensures quick data retrieval, making it suitable for time-sensitive automotive applications.

Technical Specifications

EPROM M87C257-10XF3 attributes and parameters. Explore more EPROM devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

JESD-609 Code:

e3

Length:

36.92 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.72 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M87C257-10XF3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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