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M74HC670TTR

STMicroelectronics

M74HC670TTR by STMicroelectronics

M74HC670TTR by STMicroelectronics is a 16-bit CMOS SRAM with a 4x4 organization, operating asynchronously. It features a wide supply voltage range of 2-6V and operates in extreme temperatures from -55 °C to 125 °C, making it ideal for military applications. Its compact SOIC package ensures efficient space utilization in electronic designs.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 1,793 parts In-Stock

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Vyrian

USA . 1,065 parts In-Stock

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Anansix

USA . 525 parts In-Stock

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525

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 61 parts In-Stock

1+ parts

$1.984

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$1.785

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61

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MKK Technologies

India . 176 parts In-Stock

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$3.730

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DigiPath Technology Company

USA . 176 parts In-Stock

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$3.730

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Corphita

USA . 3,623 parts In-Stock

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Parana Technologies

USA . 1,842 parts In-Stock

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$2.372

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Overview

Unlock exceptional performance with the M74HC670TTR SRAM from STMicroelectronics, a trusted leader in semiconductor innovation. This high-quality memory solution offers unparalleled reliability and speed for your designs across various applications, from telecommunications to consumer electronics. Enjoy seamless integration, low power consumption, and robust temperature resilience, ensuring your projects thrive in any environment. Elevate your technology with an SRAM that prioritizes value and longevity!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and reliability in various applications, making it suitable for long-term use.

Surface Mount: YES

The surface mount capability allows for easier integration in compact designs, optimizing PCB space.

Package Shape: RECTANGULAR

The rectangular package shape enables efficient use of space on circuit boards, supporting a compact design.

Operating Mode: ASYNCHRONOUS

An asynchronous mode provides flexibility in operation, making it ideal for diverse applications where timing is less critical.

Nominal Supply Voltage / Vsup (V): 4.5

A nominal supply voltage of 4.5V allows for stable performance in typical operational scenarios.

Power Supplies (V): 2/6

Supporting a range of 2 to 6V makes this SRAM versatile for different applications and systems.

No. of Terminals: 16

With 16 terminals, this SRAM can connect to a variety of buses and interfaces, ensuring compatibility with most systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The thin profile and small outline shrink pitch enable higher density designs, beneficial for modern electronics.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature of 125 °C makes it suitable for use in high-temperature environments.

Organization: 4X4

The 4x4 organization supports efficient data access methods, making it effective for small storage needs.

Minimum Operating Temperature: -55 °C

The ability to operate at temperatures as low as -55 °C ensures reliability in extreme conditions.

Terminal Finish: TIN LEAD

The tin lead terminal finish enhances solderability and protects against oxidation, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal positions can facilitate easier routing on PCB designs, enhancing design flexibility.

Maximum Seated Height: 1.2 mm

A low maximum seated height of 1.2 mm helps maintain a low profile in the overall system design.

Width: 4.4 mm

A width of 4.4 mm aids in compact designs, making it easier to fit into tight spaces on circuit boards.

Minimum Supply Voltage (Vsup): 2 V

A minimum supply voltage of 2V allows for power efficiency in battery-operated devices.

Length: 5 mm

At 5 mm long, this SRAM is suitable for space-constrained applications where size is critical.

Temperature Grade: MILITARY

Military-grade specifications indicate high reliability and robustness, making this SRAM suitable for critical applications.

Technology: CMOS

CMOS technology provides low power consumption and high speed, making the SRAM efficient for modern applications.

Parallel or Serial: PARALLEL

Parallel interfacing allows for fast data transfer rates, beneficial in applications requiring quick read/write operations.

No. of Words: 4 words

Four words provide sufficient storage for basic applications, ideal for small memory requirements.

Memory Width: 4

A memory width of 4 bits per word supports efficient data processing for compact data storage.

Terminal Pitch: 0.65 mm

The 0.65 mm terminal pitch allows for compact design while still maintaining adequate spacing for soldering.

No. of Words Code: 4

The specification of 4 words code aligns with applications needing a modest amount of memory.

Maximum Supply Voltage (Vsup): 6 V

The upper supply voltage of 6V accommodates a broader range of systems, enhancing compatibility.

Memory Density: 16 bit

With a memory density of 16 bits, this RAM is capable of storing a small amount of data efficiently.

Memory IC Type: STANDARD SRAM

As a standard SRAM, this component is widely understood and supported, ensuring ease of integration.

Maximum Access Time: 280 ns

A maximum access time of 280 ns facilitates fast read/write transitions, ensuring responsive system performance.

Technical Specifications

SRAM M74HC670TTR attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

280 ns

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Length:

5 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

4 words

No. of Words Code:

4

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

4X4

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

2/6

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

4.4 mm

Trade Compliance

M74HC670TTR Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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