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M74HC670RM13TR

STMicroelectronics

M74HC670RM13TR by STMicroelectronics

M74HC670RM13TR from STMicroelectronics is a 16-bit CMOS SRAM with a max access time of 280 ns, operating in asynchronous mode. It features a compact 16-terminal SO package and supports supply voltages from 2V to 6V. Ideal for military applications, it operates b/w -55 °C and 125 °C.

Median Price

-

Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 2,173 parts In-Stock

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Digiode

USA . 2,051 parts In-Stock

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2,051

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Anansix

USA . 870 parts In-Stock

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870

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IDEA Electronic Components Group

UK . 1,385 parts In-Stock

1+ parts

$2.238

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$2.015

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$2.238

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MKK Technologies

India . 812 parts In-Stock

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$4.209

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DigiPath Technology Company

USA . 812 parts In-Stock

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$4.209

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812

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Corphita

USA . 799 parts In-Stock

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Parana Technologies

USA . 732 parts In-Stock

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$2.676

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732

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$2.676

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Overview

Elevate your designs with the M74HC670RM13TR SRAM from STMicroelectronics, a trusted name in high-quality semiconductor solutions. This versatile, military-grade memory device is engineered for reliability and performance, ideal for demanding applications across aerospace, automotive, and industrial sectors. With its robust operating temperature range and efficient power supply, it ensures your projects run smoothly and efficiently, offering peace of mind and unmatched value. Choose STMicroelectronics for innovative solutions that empower your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides a lightweight and durable casing, ensuring reliability in various environmental conditions.

Surface Mount: YES

Being surface mount compatible allows for easy integration into compact electronic designs, saving space on PCBs.

Package Shape: RECTANGULAR

The rectangular shape optimizes the board layout and provides efficient space utilization.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simpler interfacing with other components, enhancing overall system performance.

Nominal Supply Voltage / Vsup: 4.5 V

A nominal supply voltage of 4.5 V ensures compatibility with a wide range of power supplies, facilitating design flexibility.

Power Supplies (V): 2/6

Supports a power supply range of 2V to 6V, allowing for versatility in different applications and power management strategies.

No. of Terminals: 16

With 16 terminals, this SRAM can connect to multiple data lines, enhancing data transfer capabilities.

Package Style (Meter): SMALL OUTLINE

The small outline package style is designed for high-density mounting, perfect for compact electronic devices.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C makes it suitable for high-temperature applications, ensuring reliable operation under stress.

Organization: 4X4

A 4x4 organization allows for efficient data handling, suitable for specific computational tasks in embedded systems.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature (-55 °C) ensures functionality in extreme cold environments, making it reliable for military and aerospace applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold finish enhances solderability and ensures long-term reliability by providing excellent corrosion resistance.

Terminal Position: DUAL

Dual terminal positioning aids in heat dissipation and provides more robust electrical connections.

Maximum Seated Height: 1.75 mm

A low seated height of 1.75 mm is beneficial for low-profile designs, contributing to overall compactness.

Width: 3.9 mm

A narrow width (3.9 mm) allows for space-saving designs in tight layouts.

Minimum Supply Voltage (Vsup): 2 V

A minimum supply voltage of 2 V gives flexibility in using lower voltage power supplies, which is crucial for battery-powered applications.

Length: 9.9 mm

The compact length (9.9 mm) makes it ideal for space-constrained environments and modern electronics that require miniaturization.

Temperature Grade: MILITARY

The military temperature grade indicates that this SRAM is built to withstand harsh conditions and deliver reliable performance in critical applications.

Technology: CMOS

CMOS technology enables low power consumption and high-speed operation, making it suitable for power-sensitive applications.

Parallel or Serial: PARALLEL

Parallel data access allows for quicker data retrieval and enhanced performance in applications needing fast data processing.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy handling during assembly and provides reliable connections to the PCB.

No. of Words: 4 words

Having four words allows for versatile data storage and retrieval, suitable for various applications requiring low memory capacity.

Memory Width: 4

A memory width of 4 bits ensures compatibility with common data handling structures, simplifying integration with processors.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm allows for easy routing on the PCB while maintaining adequate spacing for soldering.

No. of Words Code: 4

This specification indicates the SRAM is easy to configure for specific applications, making it adaptable for different memory needs.

Maximum Supply Voltage (Vsup): 6 V

A maximum supply voltage of 6 V provides a broader operational threshold for various applications and power supply designs.

Memory Density: 16 bit

A 16-bit memory density enables efficient data processing and handling, suitable for applications that require moderate memory storage.

Memory IC Type: STANDARD SRAM

Standard SRAM type ensures wide compatibility and availability, making it a reliable choice for various electronic designs.

Maximum Access Time: 280 ns

With a maximum access time of 280 ns, this SRAM provides a good balance between speed and functionality, suitable for many applications.

Technical Specifications

SRAM M74HC670RM13TR attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

280 ns

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

4 words

No. of Words Code:

4

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

4X4

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

2/6

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

M74HC670RM13TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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