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M74HC4053B1R

STMicroelectronics

M74HC4053B1R by STMicroelectronics

STMicroelectronics M74HC4053B1R is a CMOS multiplexer with 3 functions, 2 channels, and on-state resistance of 120 ohm. It operates b/w -55 to 125 °C and has a supply voltage range of 2-6 V. Ideal for military-grade applications requiring high isolation and low signal current.

Median Price

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Lifecycle Status

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Vyrian

USA . 8,140 parts In-Stock

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Digiode

USA . 2,490 parts In-Stock

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Sinequanon

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Anansix

USA . 1,147 parts In-Stock

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Freddi Giovanni

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Pegasus Components GmbH

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ECAB

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North Shore Components

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J2 Sourcing AB

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Microchip USA

USA . 396 parts In-Stock

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AZTECH Wire

Italy . 774 parts In-Stock

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$15.940

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IDEA Electronic Components Group

UK . 588 parts In-Stock

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MKK Technologies

India . 478 parts In-Stock

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DigiPath Technology Company

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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Corphita

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Parana Technologies

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Perfect Parts

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Overview

Enhance your electronic design projects with the M74HC4053B1R by STMicroelectronics, a high-quality multiplexer and switch that offers superior performance and reliability. Manufactured by STMicroelectronics, a trusted leader in the industry, this versatile component is perfect for applications requiring precision control and signal routing. With its durable plastic/epoxy construction and advanced CMOS technology, this component ensures seamless operation and optimal functionality. Experience the value and benefits of this innovative product today and take your projects to the next level with the M74HC4053B1R.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the multiplexer, ensuring a longer lifespan.

No. of Functions: 3

Allows for versatile signal routing and switching capabilities, making it suitable for a variety of applications.

Nominal Supply Voltage (Vsup): 4.5 V

Optimal supply voltage for the multiplexer to operate efficiently and reliably.

Power Supplies (V): 2/6,GND/-6

Offers multiple power supply options for flexibility in system integration and compatibility.

Maximum Operating Temperature: 125 °C

Ensures stable performance even in high-temperature environments, ideal for industrial or military use.

Width (mm): 7.62 mm

Compact size allows for easy integration into existing systems with limited space.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high-speed operation, enhancing overall performance.

Temperature Grade: MILITARY

Designed to meet stringent military standards for reliability and durability in harsh conditions.

Nominal On-state Resistance Match: 5 ohm

Provides accurate signal routing with minimal resistance for optimal performance.

Technical Specifications

Multiplexers & Switches M74HC4053B1R attributes and parameters. Explore more Multiplexers & Switches devices from STMicroelectronics

Specs

Other IC type:

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e4

Maximum Negative Supply Voltage (Vsup):

-6 V

Minimum Negative Supply Voltage (Vsup):

0 V

Nominal Negative Supply Voltage (Vsup):

-4.5 V

No. of Channels:

2

No. of Functions:

3

No. of Terminals:

16

Nominal Off-state Isolation:

50 dB

Nominal On-state Resistance Match:

5 ohm

Maximum On-state Resistance (Ron):

120 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

2/6,GND/-6

Qualification:

Not Qualified

Maximum Seated Height:

5.1 mm

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.08 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

4.5 V

Surface Mount:

NO

Maximum Switch-off Time:

225 ns

Maximum Switch-on Time:

225 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width (mm):

7.62 mm

Trade Compliance

M74HC4053B1R Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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