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M74HCT4851ADTR2G

Onsemi

M74HCT4851ADTR2G by Onsemi

M74HCT4851ADTR2G by Onsemi is a CMOS single-ended multiplexer with 8 channels. It operates at a supply voltage range of 4.5V to 5.5V and has a max on-state resistance of 550 ohm. With a small outline package style, it is suitable for military-grade applications requiring high-speed switching capabilities.

Median Price

$0.324

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,090 parts In-Stock

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-

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$0.349

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$0.290

10k+ parts

$0.258

2,090

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$0.349

$0.290

$0.258

DigiKey

USA . 2,090 parts In-Stock

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$0.300

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$0.300

Distributors (In-Stock)

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Digiode

USA . 1,691 parts In-Stock

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$0.272

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1,691

$0.272

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Vyrian

USA . 518 parts In-Stock

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$0.286

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518

$0.286

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Distributors (Availability)

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Corphita

USA . 505 parts In-Stock

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$0.257

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505

$0.257

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Corohmni

South Africa . 186 parts In-Stock

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$0.300

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186

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Component Stockers USA

USA . 2,095 parts In-Stock

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$0.370

100+ parts

$0.350

1k+ parts

$0.320

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-

2,095

$0.370

$0.350

$0.320

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Kepictronics

USA . 93,398 parts In-Stock

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TANS Electronics

Latvia . 8,362 parts In-Stock

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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Kulean Microsystems

USA . 6,015 parts In-Stock

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Problanco Electronics

Mexico . 3,665 parts In-Stock

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SupplyDigital Components

Austria . 2,495 parts In-Stock

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Microchip USA

USA . 2,321 parts In-Stock

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Continental Prestige Electronics

USA . 2,090 parts In-Stock

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$0.440

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$0.440

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UHIMA Technologies

Türkiye . 299 parts In-Stock

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299

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Overview

Unlock the power of seamless connectivity with Onsemi's M74HCT4851ADTR2G multiplexer. Crafted with precision and reliability in mind, this versatile component offers unparalleled performance in a wide range of applications. From industrial automation to consumer electronics, the M74HCT4851ADTR2G delivers unmatched value, efficiency, and innovation for all your switching needs. Trust Onsemi's expertise and elevate your projects to new heights with this cutting-edge solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and resistance to external elements, ensuring a longer lifespan for the product.

Surface Mount: YES

Enables easy and efficient installation on circuit boards, saving time and effort during assembly.

Maximum Operating Temperature: 125 °C

Allows the product to function reliably in a wide range of operating conditions without risk of overheating.

No. of Channels: 8

Offers versatility and flexibility in routing signals or data between multiple sources, making it suitable for a wide range of applications.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, enhancing the efficiency and reliability of the product.

Technical Specifications

Multiplexers & Switches M74HCT4851ADTR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

8

No. of Functions:

1

No. of Terminals:

16

Nominal On-state Resistance Match:

80 ohm

Maximum On-state Resistance (Ron):

550 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.04 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Maximum Switch-off Time:

40 ns

Maximum Switch-on Time:

40 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4.4 mm

Trade Compliance

M74HCT4851ADTR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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