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L6743TR

STMicroelectronics

L6743TR by STMicroelectronics

L6743TR by STMicroelectronics is a half-bridge MOSFET driver designed for efficient power management. It operates b/w 10.2V and 13.8V, with a max temp of 70 °C, featuring an 8-terminal gull-wing package. Ideal for compact applications requiring reliable high-side driving.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,699 parts In-Stock

1+ parts

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4,699

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Digiode

USA . 3,919 parts In-Stock

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3,919

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Anansix

USA . 2,455 parts In-Stock

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2,455

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 185 parts In-Stock

1+ parts

$4.526

100+ parts

-

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185

$4.526

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IDEA Electronic Components Group

UK . 2,286 parts In-Stock

1+ parts

$11.412

100+ parts

-

1k+ parts

$10.271

10k+ parts

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2,286

$11.412

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$10.271

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MKK Technologies

India . 1,582 parts In-Stock

1+ parts

$21.459

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1,582

$21.459

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DigiPath Technology Company

USA . 1,582 parts In-Stock

1+ parts

$21.459

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1,582

$21.459

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Ampacity Inc.

Singapore . 177 parts In-Stock

1+ parts

$25.500

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177

$25.500

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Perfect Parts

USA . 3,853 parts In-Stock

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3,853

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Corphita

USA . 3,841 parts In-Stock

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3,841

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Vigor

Singapore . 1,957 parts In-Stock

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1,957

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Parana Technologies

USA . 1,231 parts In-Stock

1+ parts

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$13.644

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1,231

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$13.644

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Overview

Unlock the full potential of your applications with the L6743TR from STMicroelectronics, a leader in innovative semiconductor solutions. This robust MOSFET gate driver ensures efficient power management across diverse sectors, from automotive to industrial automation. With its compact design and reliable performance, the L6743TR delivers exceptional value, enhancing system reliability and efficiency while simplifying integration. Elevate your projects with confidence, knowing you're backed by a trusted name in technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy materials ensures robustness and protects the internal components from environmental factors.

Surface Mount: YES

Surface mount capability allows for a compact design and easy integration into modern PCB layouts.

Maximum Supply Voltage: 13.8 V

A high maximum supply voltage offers flexibility in varied applications, accommodating different circuit requirements.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient layout design and optimizes space on smaller circuit boards.

Power Supplies (V): 12

Designed for 12V power supplies, making it compatible with a wide range of common applications.

No. of Terminals: 8

The 8-terminal configuration supports complex connections while remaining easy to manage in designs.

Package Style (Meter): SMALL OUTLINE

Small outline packaging reduces footprint on the PCB, maximizing available space for other components.

Minimum Supply Voltage: 10.2 V

A minimum supply voltage of 10.2V allows operation in lower voltage environments, enhancing versatility.

Maximum Operating Temperature: 70 °C

Operating up to 70 °C ensures reliability in higher temperature environments, crucial for industrial applications.

Minimum Operating Temperature: 0 °C

A minimum operating temperature of 0 °C makes this driver suitable for use in cooler environments.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality terminal finish provides enhanced corrosion resistance and improved conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal positioning facilitates easier routing and placement on the PCB, optimizing layout efficiency.

Maximum Seated Height: 1.75 mm

The low profile of 1.75 mm makes it suitable for applications where space is limited.

Width: 3.9 mm

Narrow width allows for denser component placement on the PCB, supporting compact designs.

High Side Driver: YES

Being a high side driver makes this product ideal for applications requiring higher voltage and performance efficiency.

Length: 4.9 mm

Short length aids in maintaining a compact form factor, valuable in space-constrained designs.

Temperature Grade: COMMERCIAL

Rated for commercial temperatures, making it suitable for general-purpose applications with moderate temperature requirements.

Terminal Form: GULL WING

The gull wing terminal form simplifies soldering and ensures a strong physical connection to the PCB.

Nominal Supply Voltage: 12 V

With a nominal supply voltage of 12V, this driver is easily usable in standard systems, minimizing design complexity.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm allows for precision assembly and ensures compatibility with various PCB designs.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Half bridge architecture provides efficient driving capability for both high and low side MOSFETs, enhancing performance in motor drives and power applications.

Technical Specifications

MOSFET Gate Drivers L6743TR attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

13.8 V

Minimum Supply Voltage:

10.2 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

L6743TR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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