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L6747CTR

STMicroelectronics

L6747CTR by STMicroelectronics

STMicroelectronics L6747CTR is a MOSFET gate driver with 12V supply voltage, suitable for surface mount applications. It features 8 terminals, nickel palladium gold finish, and operates at peak reflow temperature of 260 °C. Ideal for buffer or inverter based interface ICs in various electronic systems.

Median Price

$1.470

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 843 parts In-Stock

1+ parts

$1.470

100+ parts

$0.863

1k+ parts

$0.779

10k+ parts

-

843

$1.470

$0.863

$0.779

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 2,478 parts In-Stock

1+ parts

$1.151

100+ parts

$0.426

1k+ parts

$0.299

10k+ parts

-

2,478

$1.151

$0.426

$0.299

-

Digiode

USA . 727 parts In-Stock

1+ parts

$1.358

100+ parts

-

1k+ parts

-

10k+ parts

-

727

$1.358

-

-

-

Vyrian

USA . 9,487 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,487

-

-

-

-

Dan-Mar Components

USA . 2,478 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,478

-

-

-

-

Anansix

USA . 2,031 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,031

-

-

-

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Cyclops Electronics Ltd

UK . 1,360 parts In-Stock

1+ parts

-

100+ parts

-

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1,360

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vigor

Singapore . 1,683 parts In-Stock

1+ parts

$0.950

100+ parts

-

1k+ parts

-

10k+ parts

-

1,683

$0.950

-

-

-

Corphita

USA . 2,787 parts In-Stock

1+ parts

$1.287

100+ parts

-

1k+ parts

-

10k+ parts

-

2,787

$1.287

-

-

-

Microchip USA

USA . 270 parts In-Stock

1+ parts

$3.128

100+ parts

-

1k+ parts

-

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270

$3.128

-

-

-

IDEA Electronic Components Group

UK . 3 parts In-Stock

1+ parts

$12.373

100+ parts

-

1k+ parts

$11.136

10k+ parts

-

3

$12.373

-

$11.136

-

MKK Technologies

India . 915 parts In-Stock

1+ parts

$23.267

100+ parts

-

1k+ parts

-

10k+ parts

-

915

$23.267

-

-

-

DigiPath Technology Company

USA . 915 parts In-Stock

1+ parts

$23.267

100+ parts

-

1k+ parts

-

10k+ parts

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915

$23.267

-

-

-

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

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20,000

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Perfect Parts

USA . 3,285 parts In-Stock

1+ parts

-

100+ parts

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3,285

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A-Z Elektronik GmbH

Germany . 2,829 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,829

-

-

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Parana Technologies

USA . 2,165 parts In-Stock

1+ parts

-

100+ parts

$14.794

1k+ parts

-

10k+ parts

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2,165

-

$14.794

-

-

Alle Elektronik GmbH

Germany . 1,886 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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1,886

-

-

-

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Assy Fe

Spain . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,000

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Overview

Unlock the power of innovation with the L6747CTR by STMicroelectronics, a high-quality MOSFET Gate Driver that offers unmatched performance and reliability. Manufactured by industry leader STMicroelectronics, this product is designed to meet the needs of diverse applications with its versatile package style and dual terminal position. With a nominal supply voltage of 12V and advanced interface IC type, the L6747CTR provides exceptional value and benefits to customers looking for a cutting-edge solution in power electronics. Elevate your projects with the superior quality and advantages of the L6747CTR today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package sturdy and durable, ensuring reliable performance over time.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying assembly processes.

Power Supplies (V): 12

The 12V power supply is common and easily accessible, making it compatible with various systems and applications.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting to different components, allowing for versatile usage.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold finish offers excellent conductivity and corrosion resistance, ensuring stable connections and optimal performance.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time of 30 seconds helps in preventing overheating and damage during the assembly process.

Nominal Supply Voltage: 12V

Having a nominal supply voltage of 12V ensures compatibility with standard power sources, making it easy to integrate into existing systems.

Terminal Pitch: 0.5 mm

The small terminal pitch of 0.5mm allows for high-density mounting and space-saving on circuit boards.

Moisture Sensitivity Level (MSL): 3

MSL level 3 indicates that the product is moisture-resistant, suitable for a variety of environments and conditions.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The buffer or inverter based MOSFET driver interface IC type provides flexibility in controlling MOSFETs, offering versatility in different applications.

Technical Specifications

MOSFET Gate Drivers L6747CTR attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SON

Package Equivalence Code:

SOLCC8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Sub-Category:

MOSFET Drivers

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

L6747CTR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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