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L6743B

STMicroelectronics

L6743B by STMicroelectronics

L6743B by STMicroelectronics is a high-side MOSFET gate driver designed for efficient power management. It operates b/w 10.5V and 13.8V, with a fast turn-on time of 0.075µs and turn-off time of 0.045µs, ideal for half-bridge applications in compact designs. Its small outline package ensures easy surface mounting in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 13,353 parts In-Stock

1+ parts

-

100+ parts

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13,353

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Digiode

USA . 3,665 parts In-Stock

1+ parts

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-

1k+ parts

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3,665

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Anansix

USA . 1,728 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,728

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 269 parts In-Stock

1+ parts

$7.122

100+ parts

-

1k+ parts

$6.410

10k+ parts

-

269

$7.122

-

$6.410

-

Microchip USA

USA . 2,850 parts In-Stock

1+ parts

$8.331

100+ parts

-

1k+ parts

-

10k+ parts

-

2,850

$8.331

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-

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$9.473

100+ parts

$8.620

1k+ parts

$7.768

10k+ parts

-

100

$9.473

$8.620

$7.768

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MKK Technologies

India . 1,139 parts In-Stock

1+ parts

$13.392

100+ parts

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10k+ parts

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1,139

$13.392

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-

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DigiPath Technology Company

USA . 1,139 parts In-Stock

1+ parts

$13.392

100+ parts

-

1k+ parts

-

10k+ parts

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1,139

$13.392

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-

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AZTECH Wire

Italy . 219 parts In-Stock

1+ parts

$19.070

100+ parts

-

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219

$19.070

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QUARKTWIN TECHNOLOGY LTD

USA . 10,131 parts In-Stock

1+ parts

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10,131

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Vigor

Singapore . 2,426 parts In-Stock

1+ parts

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2,426

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Parana Technologies

USA . 2,173 parts In-Stock

1+ parts

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100+ parts

$8.515

1k+ parts

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2,173

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$8.515

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Corphita

USA . 1,498 parts In-Stock

1+ parts

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1,498

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Overview

Unlock the power of efficiency with the L6743B from STMicroelectronics, a top-tier MOSFET gate driver expertly designed for precision applications. Renowned for quality and innovation, STMicroelectronics delivers unparalleled performance, ensuring swift turn-on and turn-off times that optimize energy usage. Ideal for automotive, industrial, and consumer electronics, this compact solution enhances circuit reliability while simplifying integration, making it your trusted partner in advancing technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making the product reliable in various conditions.

Surface Mount: YES

Surface mount technology allows for efficient assembly and compact designs, making integration into modern circuits easier and more reliable.

Maximum Supply Voltage: 13.8 V

With a maximum supply voltage of 13.8 V, this driver can handle a range of applications, providing flexibility for different power scenarios.

Package Shape: SQUARE

The square package shape is beneficial for PCB layout, allowing for optimized space utilization and efficient thermal management.

Power Supplies (V): 12

Operating at a nominal voltage of 12 V is standard for many systems, ensuring compatibility with a wide array of devices.

No. of Terminals: 8

Eight terminals provide ample connectivity options for versatile applications, allowing for effective control and robust performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces board space requirements, making it ideal for compact designs.

Minimum Supply Voltage: 10.5 V

The minimum supply voltage of 10.5 V ensures reliable operation in various conditions while maintaining a stable performance.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures that the product can function in a wide range of environments without overheating.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0 °C, this driver can be used in applications starting from standard room temperatures up to high heat scenarios.

Terminal Position: DUAL

Dual terminal positioning allows for flexible layouts and easy connections in various circuit configurations.

Maximum Seated Height: 1 mm

A maximum seated height of 1 mm contributes to a low-profile design, ideal for space-constrained applications.

Width: 3 mm

A width of 3 mm provides a compact form factor, promoting higher density in PCB layouts.

High Side Driver: YES

As a high side driver, this product is capable of handling high side switching, which is essential for various load control applications.

Length: 3 mm

The length of 3 mm complements the width for a neat and compact footprint on PCB designs.

Temperature Grade: COMMERCIAL

Certified for commercial temperature grade, this driver is suitable for a broad range of consumer and industrial applications.

Terminal Form: NO LEAD

No lead terminals contribute to a smaller footprint and improve the thermal performance of the device.

Nominal Supply Voltage: 12 V

Operating at a nominal supply voltage of 12 V makes this driver compatible with a majority of modern power sources.

Turn-on Time: 0.075 µs

A fast turn-on time of 0.075 µs enhances switching efficiency, improving overall circuit performance.

Terminal Pitch: 0.5 mm

The 0.5 mm terminal pitch allows for denser pin arrangements, which is ideal for high-performance applications.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

The half bridge based design enhances the driver’s capability to effectively manage high-side and low-side MOSFETs.

Turn-off Time: 0.045 µs

A quick turn-off time of 0.045 µs further improves the dynamic performance of the driver, decreasing switching losses.

Technical Specifications

MOSFET Gate Drivers L6743B attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PDSO-N8

Length:

3 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

13.8 V

Minimum Supply Voltage:

10.5 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.045 us

Turn-on Time:

.075 us

Width:

3 mm

Trade Compliance

L6743B Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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