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L6743Q

STMicroelectronics

L6743Q by STMicroelectronics

L6743Q by STMicroelectronics is a high-side MOSFET gate driver designed for efficient power management. It operates b/w 10.2V and 13.8V, with a max temp of 70 °C, making it ideal for compact applications. Its small outline and dual terminal design ensure easy integration in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 12,035 parts In-Stock

1+ parts

-

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12,035

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-

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Anansix

USA . 2,680 parts In-Stock

1+ parts

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2,680

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Digiode

USA . 2,527 parts In-Stock

1+ parts

-

100+ parts

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2,527

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 1,524 parts In-Stock

1+ parts

$2.154

100+ parts

-

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10k+ parts

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1,524

$2.154

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IDEA Electronic Components Group

UK . 24 parts In-Stock

1+ parts

$5.597

100+ parts

-

1k+ parts

$5.038

10k+ parts

-

24

$5.597

-

$5.038

-

AZTECH Wire

Italy . 1,162 parts In-Stock

1+ parts

$8.430

100+ parts

-

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1,162

$8.430

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-

-

MKK Technologies

India . 1,577 parts In-Stock

1+ parts

$10.525

100+ parts

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1,577

$10.525

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-

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DigiPath Technology Company

USA . 1,577 parts In-Stock

1+ parts

$10.525

100+ parts

-

1k+ parts

-

10k+ parts

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1,577

$10.525

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-

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A-Z Elektronik GmbH

Germany . 5,507 parts In-Stock

1+ parts

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5,507

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RC Electronics

USA . 4,500 parts In-Stock

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4,500

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Corphita

USA . 4,486 parts In-Stock

1+ parts

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4,486

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Alle Elektronik GmbH

Germany . 3,671 parts In-Stock

1+ parts

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3,671

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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Parana Technologies

USA . 1,838 parts In-Stock

1+ parts

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100+ parts

$6.692

1k+ parts

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1,838

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$6.692

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Overview

Unlock enhanced performance and reliability with the L6743Q MOSFET Gate Driver from STMicroelectronics. Renowned for innovation, STMicroelectronics delivers exceptional quality that empowers your high-efficiency designs. This compact, surface-mount driver excels in automotive and industrial applications, offering robust functionality in a temperature range suited for demanding environments. Elevate your projects with unmatched precision and responsiveness, ensuring optimal power management and seamless integration for a competitive edge.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance against environmental factors, making this MOSFET gate driver suitable for various applications.

Surface Mount: YES

The surface mount capability allows for compact designs and improves efficiency in PCB layout, ideal for space-constrained environments.

Maximum Supply Voltage: 13.8 V

A maximum supply voltage of 13.8 V provides flexibility in high-voltage applications, enabling it to drive more robust MOSFETs effectively.

Package Shape: RECTANGULAR

The rectangular shape facilitates a straightforward integration into design layouts, optimizing space and thermal performance.

Power Supplies (V): 12

Designed for a nominal supply voltage of 12 V, this MOSFET driver is well-suited for standard power supply levels in most electronic circuits.

No. of Terminals: 10

With 10 terminals, the device provides ample connectivity options for various circuit configurations, enhancing design versatility.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline and thin profile allow for efficient heat dissipation and easier integration into tight spaces, making it an excellent choice for modern electronics.

Minimum Supply Voltage: 10.2 V

A low minimum supply voltage of 10.2 V allows for reliable operation in lower voltage environments, accommodating diverse applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this device can function effectively in moderate thermal environments, ensuring reliable performance.

Minimum Operating Temperature: 0 °C

Operating down to 0 °C ensures the device can be used in a wide range of temperature-sensitive applications, from industrial to consumer electronics.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and resistance to oxidation, enhancing long-term reliability in various environments.

Terminal Position: DUAL

The dual terminal position layout allows for optimal placement on PCB designs, aiding in signal integrity and power management efficiency.

Maximum Seated Height: 1 mm

A maximum seated height of only 1 mm contributes to a low-profile design, facilitating improved airflow and space-saving in dense circuits.

Width: 3 mm

At just 3 mm wide, this compact dimension is essential for modern electronic devices where space efficiency is critical.

High Side Driver: YES

The capability as a high side driver expands its application range, allowing for flexibility in various power management scenarios.

Maximum Time At Peak Reflow Temperature (s): 30

Allowing for a peak reflow time of 30 seconds ensures compatibility with most standard soldering processes, facilitating easier assembly.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C guarantees robust solder joints and reliability during mounting processes, suitable for automated assembly.

Length: 3 mm

At a short length of 3 mm, this driver can easily be integrated into compact electronic designs, maintaining space efficiency.

Temperature Grade: COMMERCIAL

The commercial temperature grading indicates suitability for everyday applications, balancing performance and cost-effectiveness.

Terminal Form: NO LEAD

The no-lead design enhances electrical performance and minimizes the footprint on PCB, making it ideal for modern high-density designs.

Nominal Supply Voltage: 12 V

Optimized for a nominal supply voltage of 12 V, it’s compatible with widely used power sources, simplifying integration into existing systems.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm enables tightly packed designs on PCBs, making it suitable for compact electronic systems.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Being a half bridge based driver allows for flexible control of the MOSFETs, improving efficiency and performance in switching applications.

Technical Specifications

MOSFET Gate Drivers L6743Q attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-N10

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC10,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

13.8 V

Minimum Supply Voltage:

10.2 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

L6743Q Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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