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L6569

STMicroelectronics

L6569 by STMicroelectronics

L6569 by STMicroelectronics is a MOSFET gate driver with a max supply voltage of 16.6V and power supplies at 12V, suitable for automotive applications. It features an output in totem-pole configuration, operating temperature range from -40 °C to 125°C, and Schmitt trigger input characteristics.

Median Price

$2.310

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,063 parts In-Stock

1+ parts

$2.310

100+ parts

$1.396

1k+ parts

$1.232

10k+ parts

-

1,063

$2.310

$1.396

$1.232

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 600 parts In-Stock

1+ parts

$2.194

100+ parts

-

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600

$2.194

-

-

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Vyrian

USA . 2,204 parts In-Stock

1+ parts

$2.310

100+ parts

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2,204

$2.310

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ComSIT Distribution GmbH

Germany . 4,750 parts In-Stock

1+ parts

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4,750

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-

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ComSIT USA

USA . 3,200 parts In-Stock

1+ parts

-

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3,200

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Anansix

USA . 2,824 parts In-Stock

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2,824

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ACDS - Activité Composants Distribution Service

France . 2,550 parts In-Stock

1+ parts

-

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2,550

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-

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R&J Components

USA . 75 parts In-Stock

1+ parts

-

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75

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Fibra_Brandt Electronic GMBH

Germany . 50 parts In-Stock

1+ parts

-

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50

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LIBRA Elektronik GmbH

Germany . 48 parts In-Stock

1+ parts

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48

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 4,688 parts In-Stock

1+ parts

$2.079

100+ parts

-

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4,688

$2.079

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-

-

Vigor

Singapore . 1,259 parts In-Stock

1+ parts

$2.420

100+ parts

-

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1,259

$2.420

-

-

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IDEA Electronic Components Group

UK . 1,854 parts In-Stock

1+ parts

$3.916

100+ parts

-

1k+ parts

$3.525

10k+ parts

-

1,854

$3.916

-

$3.525

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MKK Technologies

India . 820 parts In-Stock

1+ parts

$7.365

100+ parts

-

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820

$7.365

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DigiPath Technology Company

USA . 820 parts In-Stock

1+ parts

$7.365

100+ parts

-

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820

$7.365

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-

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Component Stockers USA

USA . 361 parts In-Stock

1+ parts

$99.990

100+ parts

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361

$99.990

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Perfect Parts

USA . 15,138 parts In-Stock

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15,138

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A-Z Elektronik GmbH

Germany . 5,091 parts In-Stock

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5,091

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Assy Fe

Spain . 4,571 parts In-Stock

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4,571

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Cyclops Electronics Ltd (Excess)

UK . 3,692 parts In-Stock

1+ parts

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3,692

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Alle Elektronik GmbH

Germany . 3,394 parts In-Stock

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3,394

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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Parana Technologies

USA . 1,997 parts In-Stock

1+ parts

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100+ parts

$4.683

1k+ parts

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1,997

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$4.683

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Infinite Electronics LLP (Excess)

. 334 parts In-Stock

1+ parts

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334

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Overview

Unlock the full potential of your electronic designs with the L6569 MOSFET Gate Driver from STMicroelectronics. Built with precision and expertise, this high-quality driver offers unmatched reliability and performance. Ideal for automotive applications, the L6569 provides a seamless interface for half bridge based MOSFETs, ensuring efficient power management and protection. Experience the value and benefits of this innovative technology, designed to elevate your projects to new heights. Trust STMicroelectronics to deliver excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and provides protection against environmental factors, making it a reliable choice for various applications.

Maximum Supply Voltage: 16.6 V

With a high maximum supply voltage, this gate driver can handle a wide range of voltage inputs, offering flexibility in usage.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit designs and provides a compact form factor for space-constrained applications.

Power Supplies (V): 12

Operating at a standard 12V power supply, this gate driver can easily be incorporated into existing systems without the need for additional power sources.

No. of Terminals: 8

Having 8 terminals allows for versatile connections and compatibility with various circuit configurations, enhancing the product's usability.

Package Style (Meter): IN-LINE

The in-line package style ensures easy PCB layout and allows for efficient routing of traces, simplifying assembly and reducing signal interference.

Minimum Supply Voltage: 10 V

The low minimum supply voltage requirement ensures operation in a wide range of voltage conditions, making it suitable for various power sources.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this gate driver can withstand elevated temperatures in harsh environments, ensuring reliable performance under demanding conditions.

Output Characteristics: TOTEM-POLE

The totem-pole output configuration allows for both sourcing and sinking of current, enhancing drive capability and improving overall efficiency in driving MOSFETs.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable operation in cold environments or during startup, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring robust connections and long-term reliability in various operating conditions.

Terminal Position: DUAL

The dual terminal position allows for easy PCB mounting and ensures secure connections, facilitating installation and maintenance of the gate driver.

Maximum Seated Height: 5.08 mm

With a low maximum seated height, this gate driver can fit into tight spaces or compact designs, making it suitable for applications with limited vertical clearance.

Width: 7.62 mm

The moderate width of the package allows for easy integration into standard PCB layouts and ensures compatibility with various mounting configurations.

High Side Driver: YES

The presence of a high side driver enables efficient control of high-side MOSFETs, enhancing the gate driver's compatibility with diverse power circuit topologies.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this gate driver meets stringent temperature and reliability requirements, making it suitable for use in automotive systems with demanding operating conditions.

Technology: MOS

Utilizing MOS technology offers advantages such as low power consumption, high switching speeds, and low on-resistance, making this gate driver efficient and reliable for driving MOSFETs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy and secure soldering onto the PCB, ensuring stable connections and mechanical robustness in various mounting configurations.

Input Characteristics: SCHMITT TRIGGER

Incorporating Schmitt trigger input characteristics improves noise immunity and signal integrity, enhancing the gate driver's performance in noisy environments and ensuring accurate signal reception.

Nominal Supply Voltage: 12 V

Operating at a nominal 12V supply voltage simplifies power requirements and allows for seamless integration into standard voltage systems, offering convenience in setup and operation.

Terminal Pitch: 2.54 mm

The standard 2.54mm terminal pitch facilitates easy PCB layout and assembly, enabling quick and efficient installation of the gate driver in various circuit designs.

Nominal Output Peak Current Limit: 0.275 A

The nominal output peak current limit of 0.275A ensures safe operation within specified current ranges, protecting the driver and connected components from excessive current stress.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Employing a half-bridge-based MOSFET driver interface IC enhances drive capability and efficiency in controlling MOSFETs, making this gate driver a reliable choice for high-performance applications.

Technical Specifications

MOSFET Gate Drivers L6569 attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Input Characteristics:

SCHMITT TRIGGER

Interface IC Type:

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Nominal Output Peak Current Limit:

.275 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

16.6 V

Minimum Supply Voltage:

10 V

Nominal Supply Voltage:

12 V

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

L6569 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5331-01-022-8877, 5331010228877

NIIN

010228877

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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