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L6569D

STMicroelectronics

L6569D by STMicroelectronics

L6569D by STMicroelectronics is a MOSFET gate driver with a supply voltage range of 10-16.6V, ideal for automotive applications. It features a Schmitt trigger input, totem-pole output, and supports a nominal peak current limit of 0.275A. With a small outline package style and high side driver capability, it is suitable for compact electronic designs requiring efficient power management.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,070 parts In-Stock

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5,070

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Digiode

USA . 4,329 parts In-Stock

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4,329

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Pegasus Components GmbH

Germany . 4,079 parts In-Stock

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4,079

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ComSIT Distribution GmbH

Germany . 2,919 parts In-Stock

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2,919

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ComSIT USA

USA . 1,900 parts In-Stock

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1,900

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Anansix

USA . 562 parts In-Stock

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562

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Halfin

Belgium . 82 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,527 parts In-Stock

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$2.396

100+ parts

-

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$2.156

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1,527

$2.396

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$2.156

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Microchip USA

USA . 264 parts In-Stock

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$3.739

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264

$3.739

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MKK Technologies

India . 2,140 parts In-Stock

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$4.505

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$4.505

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DigiPath Technology Company

USA . 2,140 parts In-Stock

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$4.505

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$4.505

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$5.352

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$4.870

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$4.389

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200

$5.352

$4.870

$4.389

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AZTECH Wire

Italy . 281 parts In-Stock

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$9.000

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281

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Authorized Procurement Solutions

USA . 60,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,473 parts In-Stock

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Metaverse IC Inc.

Canada . 7,046 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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Vigor

Singapore . 2,500 parts In-Stock

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Corphita

USA . 1,976 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,959 parts In-Stock

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Parana Technologies

USA . 1,606 parts In-Stock

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$2.864

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$2.864

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Alle Elektronik GmbH

Germany . 1,306 parts In-Stock

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Assy Fe

Spain . 1,122 parts In-Stock

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Overview

Enhance the performance of your MOSFET applications with the L6569D from STMicroelectronics. With a focus on quality and reliability, STMicroelectronics is a trusted manufacturer in the industry. This compact, high-side driver offers a wide operating temperature range and dual terminals for easy installation. Perfect for automotive applications, the L6569D provides efficient power management and precise control. Trust STMicroelectronics to deliver innovative solutions that meet your needs and exceed your expectations. Elevate your projects with the L6569D today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the product lightweight and durable, ideal for applications where weight and durability are important factors.

Surface Mount: YES

The surface mount capability allows for easy integration into circuit boards, saving space and simplifying assembly.

Maximum Supply Voltage: 16.6 V

The high maximum supply voltage allows for versatility in various power supply configurations.

Package Shape: RECTANGULAR

The rectangular package shape fits well into standard circuit board layouts, making installation and routing of connections straightforward.

Power Supplies (V): 12

The 12V power supply is a common voltage level, making it compatible with many systems and applications.

No. of Terminals: 8

The ample number of terminals provide flexibility in connection options and enable the driver to control multiple MOSFETs.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance in a wide range of operating environments.

Output Characteristics: TOTEM-POLE

The totem-pole output configuration allows for efficient switching and control of MOSFETs, enhancing overall performance.

Technical Specifications

MOSFET Gate Drivers L6569D attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Input Characteristics:

SCHMITT TRIGGER

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Nominal Output Peak Current Limit:

.275 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

16.6 V

Minimum Supply Voltage:

10 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Technology:

MOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3.9 mm

Trade Compliance

L6569D Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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