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BUX98B

STMicroelectronics

BUX98B by STMicroelectronics

BUX98B by STMicroelectronics is a NPN Power BJT with 700V VCE, 30A IC, and 250W power dissipation. Ideal for switching applications, it has a single configuration in a round package with PIN terminals. Operating at up to 200 °C, it offers fast turn-on/off times of 1000ns/3800ns for efficient performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,591 parts In-Stock

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2,591

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Digiode

USA . 1,440 parts In-Stock

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1,440

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Vyrian

USA . 193 parts In-Stock

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193

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 659 parts In-Stock

1+ parts

$1.791

100+ parts

-

1k+ parts

$1.612

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659

$1.791

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$1.612

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MKK Technologies

India . 641 parts In-Stock

1+ parts

$3.368

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-

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641

$3.368

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DigiPath Technology Company

USA . 641 parts In-Stock

1+ parts

$3.368

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641

$3.368

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Corphita

USA . 2,936 parts In-Stock

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2,936

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Northwest PG Solutions

USA . 335 parts In-Stock

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335

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Native Components

USA . 296 parts In-Stock

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296

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Parana Technologies

USA . 255 parts In-Stock

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$2.142

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255

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$2.142

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Overview

Unleash the power of innovation with the BUX98B by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Power Bipolar Junction Transistors that excel in switching applications. The BUX98B offers a maximum collector-emitter voltage of 700V and a maximum power dissipation of 250W, ensuring reliable performance. With its NPN configuration and single package shape, this transistor is perfect for a wide range of applications. Experience the value and benefits of the BUX98B and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: METAL

Provides durability and good heat dissipation, making the transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering better performance and efficiency.

Configuration: SINGLE

Simplifies circuit design and provides easy integration into various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast switching speeds and efficient operation.

Maximum VCEsat: 3 V

Low VCEsat ensures minimal power loss and high efficiency during switching operations.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in tight spaces.

Terminal Form: PIN/PEG

PIN/PEG terminals provide secure connections and easy soldering during assembly.

Maximum Power Dissipation (Abs): 250 W

High power dissipation rating allows the transistor to handle large amounts of power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy and secure mounting in various applications.

Maximum Operating Temperature: 200 °C

High operating temperature range allows the transistor to operate reliably in harsh environments.

Maximum Collector-Emitter Voltage: 700 V

High VCEO rating makes the transistor suitable for high voltage applications.

Transistor Element Material: SILICON

Silicon transistor element offers high performance and reliability in various operating conditions.

Maximum Turn On Time (ton): 1000 ns

Fast turn-on time ensures quick response and efficient switching operations.

Maximum Collector Current (IC): 30 A

High collector current rating allows the transistor to handle large currents without damage.

Maximum Turn Off Time (toff): 3800 ns

Sufficient turn-off time prevents unnecessary power loss and ensures smooth switching operations.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to integrate the transistor into various circuit designs.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and enhances thermal management for improved performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUX98B attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

700 V

Configuration:

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

250 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3800 ns

Maximum Turn On Time (ton):

1000 ns

Maximum VCEsat:

3 V

Trade Compliance

BUX98B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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