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2SK3018UBTCL

ROHM

2SK3018UBTCL by ROHM

ROHM's 2SK3018UBTCL is a N-CHANNEL FET with built-in diode, ideal for switching applications. Features include 30V DS breakdown voltage, 8 ohm RDS(on), and 0.1A max drain current. Its small outline package makes it suitable for surface mount designs in various electronic circuits.

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Vyrian

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Nova Conductors

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AZTECH Wire

Italy . 503 parts In-Stock

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Ampacity Inc.

Singapore . 1,559 parts In-Stock

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RC Electronics

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Aranea Global

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Overview

Upgrade your electronic devices with the high-quality 2SK3018UBTCL Small Signal Field Effect Transistor by ROHM. This N-CHANNEL transistor offers enhanced performance and reliability for switching applications, all in a convenient surface mount package. With a minimum DS breakdown voltage of 30V and a maximum drain current of 0.1A, this transistor is perfect for a wide range of circuit designs. Trust ROHM's expertise and innovation to deliver exceptional value and benefits to meet your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Offers efficient conduction of current in the specified direction, enhancing performance.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds and low power consumption.

Minimum DS Breakdown Voltage: 30 V

Suitable for handling higher voltages without breakdown, ensuring reliability in various circuits.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving space and simplifying assembly processes.

Maximum Drain Current (ID): 0.1 A

Capable of handling moderate current loads, making it suitable for a wide range of applications.

Maximum Drain-Source On Resistance: 8 ohm

Low on-resistance results in minimal power loss and improved efficiency during operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2SK3018UBTCL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Maximum Drain-Source On Resistance:

8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SK3018UBTCL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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