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2SC5658T2LR

ROHM

2SC5658T2LR by ROHM

ROHM 2SC5658T2LR is a NPN BJT with max. collector-emitter voltage of 50V and max. collector current of 0.15A. With hFE of 180, it operates up to 150°C making it suitable for small signal amplification in various electronic applications.

Median Price

$0.292

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Mouser Electronics

USA . 2,241 parts In-Stock

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$0.420

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$0.164

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$0.098

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$0.069

2,241

$0.420

$0.164

$0.098

$0.069

DigiKey

USA . 1,206 parts In-Stock

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$0.420

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$0.164

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$0.109

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$0.080

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Verical

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Chip1Stop

Japan . 145,554 parts In-Stock

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$0.163

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$0.098

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$0.082

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Avnet

USA . 16,000 parts In-Stock

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Chip Stock

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NAC Semi

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$0.059

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ACDS - Activité Composants Distribution Service

France . 8,000 parts In-Stock

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Bristol Electronics

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Cyclops Electronics Ltd

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Perfect Parts

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Epart123

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$0.050

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GreenTree Electronics

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Cyclops Electronics Ltd (Excess)

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Netroflash

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Overview

Unlock the power of innovation with the 2SC5658T2LR by ROHM, a top-quality NPN bipolar junction transistor designed for small signal applications. Manufactured by ROHM, a trusted name in the industry, this transistor offers unparalleled reliability and performance. With a minimum DC current gain of 180 and a maximum operating temperature of 150°C, this transistor is ideal for a wide range of electronic devices. Experience the benefits of superior quality and precision engineering with the 2SC5658T2LR - the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Commonly used in amplification and switching applications in electronic circuits.

Configuration: SINGLE

Simplified design for straightforward implementation in circuits.

Surface Mount: YES

Allows for easy, space-saving mounting on circuit boards.

Maximum Power Dissipation (Abs): 0.15 W

Suitable for low power applications where heat dissipation is not a major concern.

Minimum DC Current Gain (hFE): 180

Ensures stable and consistent amplification of the input signal.

Maximum Operating Temperature: 150 °C

Can withstand higher temperatures, making it suitable for various operating environments.

Maximum Collector-Emitter Voltage: 50 V

Provides flexibility for different voltage requirements in circuits.

Nominal Transition Frequency (fT): 180 MHz

Enables high-speed signal amplification and switching capabilities.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC5658T2LR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Copper (Sn/Cu)

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC5658T2LR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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