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2SK3391

Renesas Technology

2SK3391 by Renesas Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Form: FLAT; Package Style (Meter): SMALL OUTLINE;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 582 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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582

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Native Components

USA . 330 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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330

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Technical Specifications

RF Power Field Effect Transistors (FET) 2SK3391 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Renesas Technology

Specs

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

17 V

Maximum Drain Current (ID):

.3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK3391 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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