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3SK252

Renesas Electronics

3SK252 by Renesas Electronics

Power Field-Effect Transistors; Maximum Drain Current (Abs) (ID): .025 A;

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

LWI Electronics Inc

India . 8,970 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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8,970

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Vyrian

USA . 294 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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294

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 141 parts In-Stock

1+ parts

$2.607

100+ parts

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1k+ parts

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10k+ parts

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141

$2.607

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Kepictronics

USA . 39,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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39,000

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Native Components

USA . 887 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$2.299

10k+ parts

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887

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$2.299

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Technical Specifications

Power Field Effect Transistors (FET) 3SK252 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Maximum Drain Current (Abs) (ID):

.025 A

Sub-Category:

FET RF Small Signal

Trade Compliance

3SK252 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5330-01-269-1514, 5330012691514

NIIN

012691514

Manufacturer Highlights

Renesas Electronics

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