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BC847A_R1_00001

Panjit International

BC847A_R1_00001 by Panjit International

BC847A_R1_00001 by Panjit Int. is a NPN BJT transistor with max VCEsat of 0.3V, hFE of 110, and fT of 100MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 45V.

Median Price

$0.084

Lifecycle Status

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3

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1k+

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DigiKey

USA . 295 parts In-Stock

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$0.053

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$0.034

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$0.023

295

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$0.053

$0.034

$0.023

Verical

USA . 2,844 parts In-Stock

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$0.027

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$0.027

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TME

Poland . 2,844 parts In-Stock

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$0.140

100+ parts

$0.063

1k+ parts

$0.026

10k+ parts

$0.022

2,844

$0.140

$0.063

$0.026

$0.022

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Perfect Parts

USA . 26,880 parts In-Stock

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26,880

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QUARKTWIN TECHNOLOGY LTD

USA . 8,393 parts In-Stock

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8,393

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Overview

Upgrade your electronic amplification projects with the BC847A_R1_00001 by Panjit International. Crafted with precision and expertise, this NPN Small Signal Bipolar Junction Transistor offers unparalleled performance and reliability. Whether you're designing audio amplifiers or signal processing circuits, this transistor shines with its low VCEsat of 0.3V and high DC current gain of 110. With a maximum operating temperature of 150°C, this component is built to last. Trust Panjit International for top-quality components that deliver exceptional value and efficiency to your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: NPN

Commonly used type of transistor for amplification and switching applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance in such applications.

Surface Mount: YES

Allows for easy and convenient mounting on printed circuit boards, saving space and simplifying assembly.

Maximum VCEsat: 0.3 V

Low saturation voltage minimizes power loss and improves efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Space-efficient shape that allows for compact placement within electronic devices.

Terminal Form: GULL WING

Facilitates easy soldering and connection to the circuit board.

No. of Terminals: 3

Simple design with fewer terminals makes it easier to integrate into circuit layouts.

Maximum Power Dissipation (Abs): 0.33 W

Can handle moderate power levels without overheating, ensuring reliability in operation.

Package Style (Meter): SMALL OUTLINE

Compact package size makes it suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 110

High minimum gain ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Wide temperature range allows for use in various environmental conditions without performance degradation.

Maximum Collector-Base Capacitance: 4.5 pF

Low capacitance minimizes signal distortion and ensures high-frequency performance.

Maximum Collector-Emitter Voltage: 45 V

Adequate voltage rating for typical amplifier applications, ensuring safe operation.

Transistor Element Material: SILICON

Offers good electrical properties and high reliability in semiconductor applications.

Minimum Operating Temperature: -55 °C

Wide operating temperature range allows for use in extreme conditions without performance issues.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for low-power amplifier and switching applications.

Terminal Finish: TIN

Tin finish provides good solderability and corrosion resistance for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit board layout and connections.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables fast signal switching and amplification in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847A_R1_00001 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Panjit International

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

110

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

BC847A_R1_00001 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Panjit International

PANJIT is a public company founded in May 1986. We are a semi-conductor manufacturer, and have IATF-16949,ESD S20.20,ISO-9001,ISO-14001,ISO-45001 certifications etc.. PANJIT is vertically integrated with IDM design capability, own wafer foundries and state-of-art production lines. With insight observation and core technologies, PANJIT is able to continuously launch low profile products and accurate power rating devices which conforms to the customer needs. PANJIT commits to serve customers with the best service, thus we have established sales offices worldwide. We have sites in North America, Germany, Korea and China which allows us to provide better and prompt service.

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