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SZMMBZ6V2ALT1G

Onsemi

SZMMBZ6V2ALT1G by Onsemi

SZMMBZ6V2ALT1G by Onsemi is a Zener diode with 6.2V breakdown voltage, 24W peak power dissipation, and 0.5uA reverse current. Commonly used in transient suppression applications due to its small outline package and unidirectional polarity for protecting sensitive electronics from voltage spikes.

Median Price

$0.056

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 70 parts In-Stock

1+ parts

$0.056

100+ parts

$0.052

1k+ parts

$0.049

10k+ parts

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70

$0.056

$0.052

$0.049

-

Mouser Electronics

USA . 301 parts In-Stock

1+ parts

$0.300

100+ parts

$0.115

1k+ parts

$0.075

10k+ parts

$0.048

301

$0.300

$0.115

$0.075

$0.048

Chip1Stop

Japan . 2,850 parts In-Stock

1+ parts

$2.110

100+ parts

$0.098

1k+ parts

$0.058

10k+ parts

-

2,850

$2.110

$0.098

$0.058

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Verical

USA . 306,000 parts In-Stock

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-

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$0.038

306,000

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-

-

$0.038

Rochester

USA . 294,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

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$0.025

10k+ parts

$0.023

294,000

-

$0.030

$0.025

$0.023

Newark

USA . 39,000 parts In-Stock

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-

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$0.055

39,000

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$0.055

Distributors (In-Stock)

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Digiode

USA . 1,102 parts In-Stock

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$0.024

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1,102

$0.024

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Nova Conductors

Japan . 50 parts In-Stock

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$0.049

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50

$0.049

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Bristol Electronics

USA . 28,330 parts In-Stock

1+ parts

$0.263

100+ parts

$0.131

1k+ parts

$0.052

10k+ parts

$0.033

28,330

$0.263

$0.131

$0.052

$0.033

Vyrian

USA . 86,728 parts In-Stock

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-

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86,728

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Chip Stock

USA . 56,000 parts In-Stock

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Dan-Mar Components

USA . 29,235 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 24,000 parts In-Stock

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IBS Electronics

USA . 21,000 parts In-Stock

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$0.025

21,000

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$0.025

NAC Semi

USA . 15,000 parts In-Stock

1+ parts

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$0.031

15,000

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$0.031

Cyclops Electronics Ltd

UK . 2,675 parts In-Stock

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2,675

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Microfarads

USA . 874 parts In-Stock

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874

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Distributors (Availability)

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Semicontronic

India . 85,867 parts In-Stock

1+ parts

$0.018

100+ parts

$0.018

1k+ parts

$0.017

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85,867

$0.018

$0.018

$0.017

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Ampacity Inc.

Singapore . 95,246 parts In-Stock

1+ parts

$0.021

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95,246

$0.021

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Corphita

USA . 2,270 parts In-Stock

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$0.022

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2,270

$0.022

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Corohmni

South Africa . 182 parts In-Stock

1+ parts

$0.025

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182

$0.025

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Continental Prestige Electronics

USA . 5,403 parts In-Stock

1+ parts

$0.049

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$0.048

5,403

$0.049

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$0.048

Argo Parts USA

USA . 4,573 parts In-Stock

1+ parts

$0.049

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$0.047

4,573

$0.049

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$0.047

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.049

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-

1k+ parts

$0.046

10k+ parts

$0.045

2,000

$0.049

-

$0.046

$0.045

Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$0.056

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$0.052

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$0.049

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70

$0.056

$0.052

$0.049

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Aztec Data Supply Inc.

USA . 4,424 parts In-Stock

1+ parts

$0.143

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4,424

$0.143

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Eastek

USA . 33,000 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Kulean Microsystems

USA . 6,121 parts In-Stock

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Infinite Electronics LLP (Excess)

. 6,008 parts In-Stock

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Formix International (Excess)

India . 6,000 parts In-Stock

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SupplyDigital Components

Austria . 5,159 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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TANS Electronics

Latvia . 3,580 parts In-Stock

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3,580

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Assy Fe

Spain . 3,000 parts In-Stock

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Perfect Parts

USA . 2,744 parts In-Stock

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2,744

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Problanco Electronics

Mexico . 1,827 parts In-Stock

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1,827

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UHIMA Technologies

Türkiye . 137 parts In-Stock

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137

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Overview

Discover the superior quality and reliability of the SZMMBZ6V2ALT1G transient suppression device by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology for various applications. This common anode, dual-element device offers unparalleled protection against voltage spikes, ensuring the safety of your electronics. With a wide operating temperature range and small outline package style, the SZMMBZ6V2ALT1G is a versatile solution for all your transient suppression needs. Trust Onsemi to provide unmatched value and performance for your electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, making this product a reliable choice.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with two elements allows for efficient suppression of transient voltage spikes, ensuring the safety of connected devices.

Surface Mount: YES

The surface mount capability makes installation easy and convenient, saving time and effort during assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 24 W

With a high power dissipation capability, this product can effectively handle sudden voltage surges without damage.

Nominal Breakdown Voltage: 6.2 V

The nominal breakdown voltage of 6.2V provides reliable protection against overvoltage conditions, ensuring the safety of sensitive electronics.

Maximum Reverse Current: 0.5 uA

The low maximum reverse current ensures minimal power loss and efficient operation of the device.

Package Shape: RECTANGULAR

The rectangular shape of the package facilitates easy placement and mounting on circuit boards, making it suitable for various applications.

Reverse Test Voltage: 3 V

The reverse test voltage of 3V indicates the maximum voltage the device can withstand in the reverse direction, ensuring robust protection.

No. of Terminals: 3

The three terminals provide convenient connectivity options and flexibility in circuit design, making this product versatile for different configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact electronic devices.

Technical Specifications

Transient Suppression Devices SZMMBZ6V2ALT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

6.51 V

Minimum Breakdown Voltage:

5.89 V

Nominal Breakdown Voltage:

6.2 V

Maximum Clamping Voltage:

8.7 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

24 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

3 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZMMBZ6V2ALT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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