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SZMMBZ18VALT1G

Onsemi

SZMMBZ18VALT1G by Onsemi

SZMMBZ18VALT1G by Onsemi is a Zener diode with a breakdown voltage of 18V and max power dissipation of 40W. It is commonly used as a transient suppression device in applications requiring protection against voltage spikes.

Median Price

$0.098

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 13,723 parts In-Stock

1+ parts

$0.114

100+ parts

$0.055

1k+ parts

$0.047

10k+ parts

$0.032

13,723

$0.114

$0.055

$0.047

$0.032

DigiKey

USA . 2,965 parts In-Stock

1+ parts

$0.250

100+ parts

$0.096

1k+ parts

$0.062

10k+ parts

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2,965

$0.250

$0.096

$0.062

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Mouser Electronics

USA . 2,950 parts In-Stock

1+ parts

$0.320

100+ parts

$0.115

1k+ parts

$0.073

10k+ parts

$0.056

2,950

$0.320

$0.115

$0.073

$0.056

Flip Electronics (Authorized)

USA . 210,000 parts In-Stock

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Rochester

USA . 42,000 parts In-Stock

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$0.038

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$0.032

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$0.028

42,000

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$0.038

$0.032

$0.028

Verical

USA . 39,000 parts In-Stock

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$0.040

39,000

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Newark

USA . 21,000 parts In-Stock

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$0.098

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$0.084

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21,000

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$0.098

$0.084

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Chip1Stop

Japan . 13,689 parts In-Stock

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$0.064

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$0.057

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$0.042

13,689

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$0.064

$0.057

$0.042

Distributors (In-Stock)

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Digiode

USA . 1,383 parts In-Stock

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$0.029

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$0.029

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Greenchips

USA . 141,000 parts In-Stock

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$0.051

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$0.049

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$0.046

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$0.042

141,000

$0.051

$0.049

$0.046

$0.042

Nova Conductors

Japan . 10 parts In-Stock

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$0.064

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10

$0.064

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IBS Electronics

USA . 1,359,000 parts In-Stock

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1,359,000

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SIE Connect GmbH - GreenChips

Germany . 417,000 parts In-Stock

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NAC Semi

USA . 372,000 parts In-Stock

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Flip Electronics

USA . 210,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 28,451 parts In-Stock

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Chip Stock

USA . 25,000 parts In-Stock

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Vyrian

USA . 8,622 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,935 parts In-Stock

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4,935

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ComSIT USA

USA . 4,935 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 137,843 parts In-Stock

1+ parts

$0.026

100+ parts

$0.025

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$0.025

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137,843

$0.026

$0.025

$0.025

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Ampacity Inc.

Singapore . 126,279 parts In-Stock

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$0.026

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Corphita

USA . 2,070 parts In-Stock

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$0.028

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2,070

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Component Stockers USA

USA . 199,697 parts In-Stock

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199,697

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$0.030

$0.030

$0.030

Corohmni

South Africa . 269 parts In-Stock

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$0.031

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269

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Argo Parts USA

USA . 2,332 parts In-Stock

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$0.064

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$0.063

2,332

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Netroflash

USA . 2,000 parts In-Stock

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$0.064

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Aztec Data Supply Inc.

USA . 3,652 parts In-Stock

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$0.182

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3,652

$0.182

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Advanced Electronics

New Zealand . 20 parts In-Stock

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$0.187

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$0.178

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$0.178

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20

$0.187

$0.178

$0.178

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Continental Prestige Electronics

USA . 90,115 parts In-Stock

1+ parts

$0.216

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$0.095

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$0.042

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$0.025

90,115

$0.216

$0.095

$0.042

$0.025

Infinite Electronics LLP (Excess)

. 768,576 parts In-Stock

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Perfect Parts

USA . 127,348 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 34,134 parts In-Stock

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ChipstoGo Electronic ltd

UK . 30,000 parts In-Stock

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Computer Components Inc. - USA

USA . 24,000 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Kepictronics

USA . 18,000 parts In-Stock

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Problanco Electronics

Mexico . 8,010 parts In-Stock

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Lixinc

USA . 7,937 parts In-Stock

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TANS Electronics

Latvia . 7,539 parts In-Stock

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Kulean Microsystems

USA . 7,090 parts In-Stock

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SupplyDigital Components

Austria . 4,671 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,634 parts In-Stock

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Formix International (Excess)

India . 4,221 parts In-Stock

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Robosynatics

Brazil . 350 parts In-Stock

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$2.373

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$2.373

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$2.373

350

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$2.373

$2.373

Lucentia Tech

USA . 350 parts In-Stock

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$2.373

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$2.373

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350

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$2.373

UHIMA Technologies

Türkiye . 243 parts In-Stock

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Overview

Discover the value and benefits of the SZMMBZ18VALT1G by Onsemi. This high-quality transient suppression device offers customers a reliable solution for protecting sensitive electronics from voltage spikes. With its common anode configuration and two elements, it provides efficient protection against reverse currents. Its small outline package shape and surface mount capability make it easy to integrate into various applications. Trust in Onsemi's expertise and enjoy the peace of mind that comes with using this advanced zener diode technology. Upgrade your electronic devices with the SZMMBZ18VALT1G and experience enhanced performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy package body material ensures durability and protection against external factors, making it suitable for various environments.

Config: COMMON ANODE, 2 ELEMENTS

With a common anode and two elements, this product offers efficient and reliable transient suppression capabilities for a wide range of applications.

Surface Mount: YES

Its surface mount feature enhances ease of installation, making it ideal for compact circuit board designs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 40 W

With a high maximum non-repetitive peak reverse power dissipation, this product can handle large transient surges, enhancing overall system protection.

Nominal Breakdown Voltage: 18 V

The nominal breakdown voltage of 18 V ensures effective suppression of voltage spikes, safeguarding sensitive components within the circuit.

Maximum Reverse Current: 0.05 uA

The low maximum reverse current minimizes power wastage, making this product energy-efficient and reliable.

Package Shape: RECTANGULAR

Its rectangular package shape allows for efficient placement on circuit boards, optimizing space utilization.

Reverse Test Voltage: 14.5 V

The reverse test voltage of 14.5 V ensures reliable performance under reverse polarity conditions, contributing to system stability.

No. of Terminals: 3

With three terminals, this product enables straightforward connectivity, facilitating integration into various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this product suitable for space-constrained applications, providing versatility and flexibility during installation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this product can withstand challenging environments, ensuring sustained performance and longevity.

Minimum Operating Temperature: -55 °C

The wide minimum operating temperature range of -55°C allows this product to withstand extreme cold conditions, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability, ensuring reliable electrical connections and reducing the risk of premature failure.

Terminal Position: DUAL

The dual terminal position facilitates easy and secure connection to external circuits, enhancing overall reliability of the product.

Maximum Power Dissipation: 0.225 W

The maximum power dissipation of 0.225 W enables efficient management of transient events, enhancing long-term performance and system reliability.

Minimum Breakdown Voltage: 17.1 V

The minimum breakdown voltage of 17.1 V ensures effective clamping of voltage surges, protecting sensitive components from damage.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time limit of 30 seconds at peak reflow temperature, this product can withstand reflow soldering processes, simplifying manufacturing and assembly procedures.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures reliable solder joints and proper integration into circuit boards during the assembly process.

Maximum Breakdown Voltage: 18.9 V

The maximum breakdown voltage of 18.9 V provides an added safety margin, ensuring reliable suppression of voltage transients and protecting downstream components.

Reference Standard: AEC-Q101; IEC-61000-4-2

This product complies with both AEC-Q101 and IEC-61000-4-2 standards, guaranteeing high-quality and reliable performance in automotive and electromagnetic environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

With a diode type as a trans voltage suppressor diode, this product efficiently clamps voltage levels, preventing damage to sensitive components and ensuring safe operation.

Maximum Forward Voltage (VF): 0.9 V

The low maximum forward voltage of 0.9 V minimizes power loss, making this product energy-efficient and suitable for low-voltage applications.

Technology: ZENER

Utilizing Zener technology, this product provides superior transient voltage suppression, ensuring reliable and consistent protection against voltage spikes.

Terminal Form: GULL WING

The gull wing terminal form enhances solder joint integrity, ensuring secure and reliable connections in demanding environments.

No. of Elements: 2

With two elements, this product offers dual protection against transient events, providing an extra layer of security for sensitive electronic components.

Maximum Repetitive Peak Reverse Voltage: 14.5 V

The maximum repetitive peak reverse voltage of 14.5 V ensures efficient suppression of repetitive voltage spikes, safeguarding sensitive circuitry.

Moisture Sensitivity Level (MSL): 1

Having a moisture sensitivity level of 1, this product exhibits excellent resistance to moisture absorption, promoting long-term reliability and performance.

Polarity: UNIDIRECTIONAL

This product has a unidirectional polarity, ensuring it effectively suppresses voltage spikes in a single direction, offering targeted protection for specific applications.

Maximum Clamping Voltage: 25 V

With a maximum clamping voltage of 25 V, this product efficiently limits voltage transients, preventing them from reaching harmful levels, and safeguarding connected devices.

Diode Element Material: SILICON

Constructed with silicon diode elements, this product provides high reliability, efficiency, and excellent voltage clamping capabilities, ensuring superior transient suppression performance.

Technical Specifications

Transient Suppression Devices SZMMBZ18VALT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

18.9 V

Minimum Breakdown Voltage:

17.1 V

Nominal Breakdown Voltage:

18 V

Maximum Clamping Voltage:

25 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

40 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

14.5 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

14.5 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZMMBZ18VALT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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