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SZMMBZ27VALT3G

Onsemi

SZMMBZ27VALT3G by Onsemi

SZMMBZ27VALT3G by Onsemi is a Zener diode with 2 elements, common anode configuration, and max breakdown voltage of 28.35V. It is used for transient suppression in applications requiring protection against voltage spikes. With a small outline package style and matte tin terminal finish, it operates b/w -55 to 150°C effectively.

Median Price

$0.250

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 12,255 parts In-Stock

1+ parts

$0.250

100+ parts

$0.096

1k+ parts

$0.055

10k+ parts

$0.035

12,255

$0.250

$0.096

$0.055

$0.035

DigiKey

USA . 630 parts In-Stock

1+ parts

$0.250

100+ parts

$0.096

1k+ parts

$0.062

10k+ parts

$0.047

630

$0.250

$0.096

$0.062

$0.047

Arrow

USA . 60,000 parts In-Stock

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Verical

USA . 60,000 parts In-Stock

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Chip1Stop

Japan . 60,000 parts In-Stock

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$0.036

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$0.036

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Nova Conductors

Japan . 46 parts In-Stock

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$0.062

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46

$0.062

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Bristol Electronics

USA . 4,747 parts In-Stock

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$0.148

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$0.074

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$0.030

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$0.022

4,747

$0.148

$0.074

$0.030

$0.022

Digiode

USA . 1,741 parts In-Stock

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$0.162

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Vyrian

USA . 76,036 parts In-Stock

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Cyclops Electronics Ltd

UK . 63,449 parts In-Stock

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IBS Electronics

USA . 40,000 parts In-Stock

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$0.063

Chip Stock

USA . 35,000 parts In-Stock

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NAC Semi

USA . 20,000 parts In-Stock

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Dan-Mar Components

USA . 4,747 parts In-Stock

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Flip Electronics

USA . 1,388 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 46,757 parts In-Stock

1+ parts

$0.031

100+ parts

$0.030

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$0.030

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-

46,757

$0.031

$0.030

$0.030

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Corohmni

South Africa . 424 parts In-Stock

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$0.036

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424

$0.036

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Aztec Data Supply Inc.

USA . 131 parts In-Stock

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$0.040

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131

$0.040

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Argo Parts USA

USA . 82 parts In-Stock

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$0.062

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$0.060

82

$0.062

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$0.060

Continental Prestige Electronics

USA . 16 parts In-Stock

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$0.062

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$0.060

16

$0.062

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$0.060

Bastille Electronics

Australia . 40 parts In-Stock

1+ parts

$0.062

100+ parts

$0.059

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$0.056

10k+ parts

$0.055

40

$0.062

$0.059

$0.056

$0.055

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.064

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$0.061

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$0.061

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1,000

$0.064

$0.061

$0.061

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Ampacity Inc.

Singapore . 47,179 parts In-Stock

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$0.067

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Corphita

USA . 2,086 parts In-Stock

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Component Stockers USA

USA . 552,012 parts In-Stock

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$0.300

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$0.050

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Perfect Parts

USA . 862,400 parts In-Stock

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GreenTree Electronics

Israel . 770,000 parts In-Stock

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RC Electronics

USA . 104,036 parts In-Stock

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Lixinc

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 8,399 parts In-Stock

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SupplyDigital Components

Austria . 4,730 parts In-Stock

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Problanco Electronics

Mexico . 3,573 parts In-Stock

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Kepictronics

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UHIMA Technologies

Türkiye . 878 parts In-Stock

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TANS Electronics

Latvia . 606 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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Lucentia Tech

USA . 100 parts In-Stock

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$10.575

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$10.575

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$10.575

100

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$10.575

$10.575

$10.575

Overview

Experience superior protection with the SZMMBZ27VALT3G by Onsemi, a top-of-the-line transient suppression device that offers unmatched quality and reliability. Manufactured by Onsemi, a renowned industry leader, this product is designed to provide effective safeguarding against voltage spikes in a variety of applications. With its common anode configuration and dual element design, this device ensures optimal performance and durability. Trust in Onsemi's expertise and invest in the SZMMBZ27VALT3G for peace of mind and unparalleled protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and reliability, making this product suitable for various environmental conditions.

Maximum Non Repetitive Peak Reverse Power Dissipation: 40 W

The high peak reverse power dissipation ensures that the device can handle sudden surges and spikes without getting damaged.

Nominal Breakdown Voltage: 27 V

The nominal breakdown voltage of 27V indicates the voltage at which the device starts conducting, effectively protecting connected components.

Technology: ZENER

The Zener technology allows for precise voltage regulation and clamping, providing reliable overvoltage protection in various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the device can withstand elevated temperatures without compromising performance.

Reference Standard: AEC-Q101; IEC-61000-4-2

Compliance with industry standards ensures the device meets stringent quality and performance requirements, making it a reliable choice for transient suppression.

Technical Specifications

Transient Suppression Devices SZMMBZ27VALT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

28.35 V

Minimum Breakdown Voltage:

25.65 V

Nominal Breakdown Voltage:

27 V

Maximum Clamping Voltage:

40 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

40 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

22 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

22 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZMMBZ27VALT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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