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SZMMBZ5V6ALT3G

Onsemi

SZMMBZ5V6ALT3G by Onsemi

SZMMBZ5V6ALT3G by Onsemi is a Zener Transient Voltage Suppressor diode with 5.6V breakdown voltage, 24W peak reverse power dissipation, and 8V clamping voltage. Commonly used for transient suppression in electronic circuits to protect against voltage spikes and surges.

Median Price

$0.162

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 93 parts In-Stock

1+ parts

$0.162

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93

$0.162

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Chip Stock

USA . 46,000 parts In-Stock

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46,000

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Vyrian

USA . 5,708 parts In-Stock

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5,708

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Digiode

USA . 1,430 parts In-Stock

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1,430

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,223 parts In-Stock

1+ parts

$0.160

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3,223

$0.160

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Semicontronic

India . 1,335 parts In-Stock

1+ parts

$1.010

100+ parts

$0.985

1k+ parts

$0.980

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1,335

$1.010

$0.985

$0.980

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Ampacity Inc.

Singapore . 1,523 parts In-Stock

1+ parts

$2.010

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1,523

$2.010

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AZTECH Wire

Italy . 497 parts In-Stock

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$8.398

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497

$8.398

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Component Stockers USA

USA . 670 parts In-Stock

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$99.990

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670

$99.990

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SupplyDigital Components

Austria . 7,452 parts In-Stock

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Problanco Electronics

Mexico . 4,668 parts In-Stock

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Kulean Microsystems

USA . 4,393 parts In-Stock

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Continental Prestige Electronics

USA . 3,254 parts In-Stock

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3,254

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TANS Electronics

Latvia . 2,881 parts In-Stock

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Argo Parts USA

USA . 1,653 parts In-Stock

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UHIMA Technologies

Türkiye . 567 parts In-Stock

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Corohmni

South Africa . 218 parts In-Stock

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Corphita

USA . 136 parts In-Stock

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136

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Bastille Electronics

Australia . 90 parts In-Stock

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90

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Overview

Discover the power of protection with the SZMMBZ5V6ALT3G by Onsemi, a top-tier manufacturer in the industry. These transient suppression devices offer unmatched quality and reliability for a wide range of applications. With a common anode configuration and dual elements, this product provides superior performance in safeguarding your electronics from voltage spikes. Trust in the innovative Zener technology and unidirectional polarity to ensure maximum clamping voltage and peace of mind. Upgrade your devices with the SZMMBZ5V6ALT3G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for various applications.

Config: COMMON ANODE, 2 ELEMENTS

Common anode configuration with 2 elements provides efficient voltage suppression and protection.

Surface Mount: YES

Being surface mountable allows for easy installation and saves space on the PCB.

Maximum Non Repetitive Peak Reverse Power Dissipation: 24 W

With a high power dissipation capacity, this product can handle sudden surges effectively.

Nominal Breakdown Voltage: 5.6 V

The nominal breakdown voltage ensures reliable protection against overvoltage conditions.

Maximum Reverse Current: 5 uA

Low reverse current ensures minimal power loss and efficient operation of the device.

Package Shape: RECTANGULAR

The rectangular package shape offers easy handling and integration into circuit designs.

Reverse Test Voltage: 3 V

Reliable reverse test voltage ensures accurate performance in real-world conditions.

No. of Terminals: 3

Three terminals provide secure connections and stable operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact product designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature makes this product suitable for various environments and applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures reliable performance even in extreme cold conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides corrosion resistance and ensures long-term reliability.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and installation.

Maximum Power Dissipation: 0.225 W

Efficient power dissipation capability ensures stable operation under high loads.

Minimum Breakdown Voltage: 5.32 V

The minimum breakdown voltage guarantees consistent performance in critical voltage suppression scenarios.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures proper soldering and durability during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures the product can withstand harsh soldering processes.

Maximum Breakdown Voltage: 5.88 V

The maximum breakdown voltage provides an extra margin of safety against voltage spikes.

Reference Standard: AEC-Q101; IEC-61000-4-2

Compliance with industry standards ensures quality and reliability of the product.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The type of diode used indicates efficient voltage suppression capabilities for protection.

Technology: ZENER

Zener technology ensures precise voltage regulation and suppression for enhanced circuit protection.

Terminal Form: GULL WING

Gull wing terminal form allows for easy surface mounting and secure connections.

No. of Elements: 2

Two elements enhance the voltage suppression capability for reliable protection.

Maximum Repetitive Peak Reverse Voltage: 3 V

High repetitive peak reverse voltage ensures long-term reliability and protection.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures protection against voltage spikes in a specific direction.

Maximum Clamping Voltage: 8 V

Maximum clamping voltage indicates the maximum voltage level the device can suppress effectively.

Diode Element Material: SILICON

The silicon diode element material offers excellent performance and reliability for voltage suppression.

Technical Specifications

Transient Suppression Devices SZMMBZ5V6ALT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

5.88 V

Minimum Breakdown Voltage:

5.32 V

Nominal Breakdown Voltage:

5.6 V

Maximum Clamping Voltage:

8 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

24 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

3 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZMMBZ5V6ALT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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