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SZMMBZ27VCLT3G

Onsemi

SZMMBZ27VCLT3G by Onsemi

SZMMBZ27VCLT3G by Onsemi is a Zener technology Trans Voltage Suppressor Diode with 2 elements, common cathode configuration, and max breakdown voltage of 28.35V. It is designed for transient suppression applications in automotive electronics, offering a peak reflow temperature of 260°C and AEC-Q101 compliance.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,000 parts In-Stock

1+ parts

$0.290

100+ parts

$0.112

1k+ parts

$0.064

10k+ parts

$0.038

5,000

$0.290

$0.112

$0.064

$0.038

Verical

USA . 170,000 parts In-Stock

1+ parts

-

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-

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$0.053

170,000

-

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$0.053

DigiKey

USA . 3,469 parts In-Stock

1+ parts

-

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10k+ parts

$0.038

3,469

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$0.038

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.062

100+ parts

-

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100

$0.062

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Digiode

USA . 2,106 parts In-Stock

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$0.238

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2,106

$0.238

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Freelance Electronics

USA . 2,385 parts In-Stock

1+ parts

$0.349

100+ parts

$0.367

1k+ parts

$0.346

10k+ parts

-

2,385

$0.349

$0.367

$0.346

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Flip Electronics

USA . 2,550,000 parts In-Stock

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2,550,000

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Chip Stock

USA . 206,500 parts In-Stock

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206,500

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NAC Semi

USA . 150,000 parts In-Stock

1+ parts

-

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$0.046

150,000

-

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$0.046

ComSIT Distribution GmbH

Germany . 8,164 parts In-Stock

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8,164

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Vyrian

USA . 6,652 parts In-Stock

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6,652

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Distributors (Availability)

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Ampacity Inc.

Singapore . 148,644 parts In-Stock

1+ parts

$0.029

100+ parts

-

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10k+ parts

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148,644

$0.029

-

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Semicontronic

India . 148,541 parts In-Stock

1+ parts

$0.029

100+ parts

$0.028

1k+ parts

$0.028

10k+ parts

-

148,541

$0.029

$0.028

$0.028

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Corohmni

South Africa . 178 parts In-Stock

1+ parts

$0.034

100+ parts

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178

$0.034

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.060

100+ parts

-

1k+ parts

$0.058

10k+ parts

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100

$0.060

-

$0.058

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Continental Prestige Electronics

USA . 3,597 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

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$0.060

3,597

$0.062

-

-

$0.060

Argo Parts USA

USA . 2,874 parts In-Stock

1+ parts

$0.062

100+ parts

-

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$0.060

2,874

$0.062

-

-

$0.060

Aztec Data Supply Inc.

USA . 4,083 parts In-Stock

1+ parts

$0.080

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4,083

$0.080

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Corphita

USA . 2,137 parts In-Stock

1+ parts

$0.225

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2,137

$0.225

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Kepictronics

USA . 100,000 parts In-Stock

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RC Electronics

USA . 100,000 parts In-Stock

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Perfect Parts

USA . 95,200 parts In-Stock

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Component Stockers USA

USA . 90,115 parts In-Stock

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iodParts Technologies Inc.

India . 13,285 parts In-Stock

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13,285

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Lixinc

USA . 8,996 parts In-Stock

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Kulean Microsystems

USA . 8,028 parts In-Stock

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8,028

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 902 parts In-Stock

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SupplyDigital Components

Austria . 628 parts In-Stock

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628

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TANS Electronics

Latvia . 305 parts In-Stock

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305

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UHIMA Technologies

Türkiye . 52 parts In-Stock

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52

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Overview

Discover the ultimate solution for transient suppression with the SZMMBZ27VCLT3G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality components that guarantee reliability and performance. This diode offers unparalleled protection against voltage spikes, making it ideal for a wide range of applications. From automotive to industrial electronics, this product provides peace of mind knowing your devices are safeguarded. Upgrade to the SZMMBZ27VCLT3G and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and protection for the device, making it suitable for a variety of applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for effective transient suppression and protection of connected circuits.

Surface Mount: YES

Surface mount capability enables easy and convenient installation on circuit boards, saving time and effort in assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 40 W

With a high peak reverse power dissipation of 40W, this device can effectively handle transient events and protect sensitive components.

Package Shape: RECTANGULAR

Rectangular package shape provides a compact and space-efficient design, making it ideal for applications with limited space.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures the device can withstand elevated temperatures without compromising performance.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature of -55°C allows the device to function reliably in cold environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers good solderability and corrosion resistance, ensuring reliable connections.

Maximum Power Dissipation: 0.225 W

With a low maximum power dissipation of 0.225W, the device operates efficiently while providing effective transient suppression.

Minimum Breakdown Voltage: 25.65 V

Minimum breakdown voltage of 25.65V indicates the device can quickly activate and suppress transient voltages above this threshold.

Maximum Breakdown Voltage: 28.35 V

High maximum breakdown voltage of 28.35V ensures comprehensive protection against overvoltage events.

Technical Specifications

Transient Suppression Devices SZMMBZ27VCLT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

28.35 V

Minimum Breakdown Voltage:

25.65 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

40 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

22 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZMMBZ27VCLT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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