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SZMMQA5V6T1G

Onsemi

SZMMQA5V6T1G by Onsemi

SZMMQA5V6T1G by Onsemi is a Transient Suppression Device with a max non-repetitive peak reverse power dissipation of 150W. It has a breakdown voltage of 5.6V and is commonly used as a TRANS VOLTAGE SUPPRESSOR DIODE in applications requiring protection against voltage spikes.

Median Price

$0.103

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

$0.107

1k+ parts

$0.089

10k+ parts

$0.079

6,000

-

$0.107

$0.089

$0.079

Verical

USA . 6,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.099

6,000

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-

-

$0.099

Distributors (In-Stock)

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Digiode

USA . 1,304 parts In-Stock

1+ parts

$0.087

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1,304

$0.087

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Chip Stock

USA . 63,000 parts In-Stock

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63,000

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Flip Electronics

USA . 6,000 parts In-Stock

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Vyrian

USA . 4,096 parts In-Stock

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4,096

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ComSIT Distribution GmbH

Germany . 1,645 parts In-Stock

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1,645

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ComSIT USA

USA . 1,645 parts In-Stock

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1,645

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Ampacity Inc.

Singapore . 5,977 parts In-Stock

1+ parts

$0.078

100+ parts

-

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5,977

$0.078

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Corphita

USA . 2,046 parts In-Stock

1+ parts

$0.083

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2,046

$0.083

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Corohmni

South Africa . 98 parts In-Stock

1+ parts

$0.092

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98

$0.092

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Aztec Data Supply Inc.

USA . 2,011 parts In-Stock

1+ parts

$0.154

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2,011

$0.154

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Semicontronic

India . 5,643 parts In-Stock

1+ parts

$0.170

100+ parts

$0.166

1k+ parts

$0.165

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5,643

$0.170

$0.166

$0.165

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AZTECH Wire

Italy . 1,053 parts In-Stock

1+ parts

$11.600

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1,053

$11.600

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Perfect Parts

USA . 111,026 parts In-Stock

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Kepictronics

USA . 69,000 parts In-Stock

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69,000

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Metaverse IC Inc.

Canada . 69,000 parts In-Stock

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SupplyDigital Components

Austria . 6,678 parts In-Stock

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Continental Prestige Electronics

USA . 5,635 parts In-Stock

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5,635

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TANS Electronics

Latvia . 4,682 parts In-Stock

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4,682

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Argo Parts USA

USA . 1,671 parts In-Stock

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Kulean Microsystems

USA . 1,612 parts In-Stock

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Problanco Electronics

Mexico . 219 parts In-Stock

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UHIMA Technologies

Türkiye . 89 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Discover the SZMMQA5V6T1G by Onsemi, a high-quality Transient Suppression Device that offers unmatched value and benefits to customers. With its common anode configuration and four elements, this device provides exceptional protection against voltage transients. Its small outline package makes it perfect for space-constrained applications. Designed with durable plastic/epoxy material and matte tin terminal finish, this diode ensures long-lasting performance in extreme temperature conditions. Ideal for various industries, this avalanche technology-based diode delivers reliable and efficient protection. Experience peace of mind with the SZMMQA5V6T1G, backed by Onsemi's reputation for excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy package body material provides durability and protection, making it suitable for various environments.

Config: COMMON ANODE, 4 ELEMENTS

The common anode configuration with 4 elements allows for efficient and effective transient suppression, offering reliable protection against voltage spikes.

Surface Mount: YES

With surface mount capability, this product can be easily mounted on circuit boards, enabling convenient integration into electronic systems.

Maximum Non Repetitive Peak Reverse Power Dissipation: 150 W

The high maximum non-repetitive peak reverse power dissipation of 150 W ensures that this product can handle transient events and effectively suppress voltage spikes.

Nominal Breakdown Voltage: 5.6 V

The nominal breakdown voltage of 5.6 V provides a threshold at which this product begins to suppress voltage spikes, offering enhanced protection for sensitive electronic components.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space, making this product suitable for applications where size constraints are important.

No. of Terminals: 6

With 6 terminals, this product provides multiple connection options, enabling versatile integration into different circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers compactness and ease of installation, making this product a convenient choice for space-limited applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the reliability and stability of this product even under demanding conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C allows this product to function effectively in extreme cold environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides reliable electrical connections, ensuring optimal performance and reducing the risk of corrosion.

Terminal Position: DUAL

With dual terminal positions, this product offers flexibility in installation and allows for various connection orientations.

Maximum Power Dissipation: 0.225 W

The maximum power dissipation of 0.225 W indicates the product's efficiency in minimizing power loss, making it an energy-efficient choice.

Minimum Breakdown Voltage: 5.32 V

The high minimum breakdown voltage of 5.32 V ensures reliable transient suppression, offering robust protection against voltage spikes.

Maximum Time At Peak Reflow Temperature (s): 30

This product can withstand a maximum of 30 seconds at peak reflow temperature, allowing for safe and efficient assembly during manufacturing processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C indicates the product's ability to withstand high-temperature soldering processes, ensuring reliable and durable connections.

Maximum Breakdown Voltage: 5.88 V

The high maximum breakdown voltage of 5.88 V provides an extra margin of safety, making this product suitable for demanding applications with higher voltage transients.

Reference Standard: AEC-Q101

Complying with the AEC-Q101 standard ensures that this product meets automotive industry requirements, making it a reliable choice for automotive applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This product's diode type as a trans voltage suppressor diode indicates its specific functionality in suppressing voltage transients, enhancing the overall protection of sensitive electronic components.

Technology: AVALANCHE

The use of avalanche technology in this product enhances its transient suppression capabilities, providing robust protection against voltage spikes.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and strong mechanical connections, facilitating reliable integration into electronic systems.

No. of Elements: 4

With 4 elements, this product offers multiple parallel transient suppression paths, ensuring efficient voltage clamping and protection.

Maximum Repetitive Peak Reverse Voltage: 3 V

The low maximum repetitive peak reverse voltage of 3 V indicates the product's effectiveness in suppressing repeated voltage spikes, ensuring reliable protection for circuits and components.

Polarity: UNIDIRECTIONAL

The unidirectional polarity of this product ensures that it suppresses voltage spikes in one direction only, offering targeted protection against transient events.

Maximum Clamping Voltage: 8 V

The maximum clamping voltage of 8 V indicates the product's ability to limit the voltage level during transient events, safeguarding connected devices from potential damage.

Diode Element Material: SILICON

The use of silicon as the diode element material provides high performance and reliability, making this product a durable choice for transient suppression applications.

Technical Specifications

Transient Suppression Devices SZMMQA5V6T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

5.88 V

Minimum Breakdown Voltage:

5.32 V

Nominal Breakdown Voltage:

5.6 V

Maximum Clamping Voltage:

8 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

150 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZMMQA5V6T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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