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SZMMBZ9V1ALT1G

Onsemi

SZMMBZ9V1ALT1G by Onsemi

SZMMBZ9V1ALT1G by Onsemi is a Transient Suppression Device with 2 ELEMENTS in COMMON ANODE config. It has a Max Breakdown Voltage of 9.56 V and operates b/w -55 to 150 °C. Ideal for protecting electronic circuits from voltage spikes in automotive applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 26,000 parts In-Stock

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Digiode

USA . 2,203 parts In-Stock

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2,203

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Vyrian

USA . 212 parts In-Stock

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212

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Nova Conductors

Japan . 91 parts In-Stock

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91

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,526 parts In-Stock

1+ parts

$0.069

100+ parts

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1,526

$0.069

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Advanced Electronics

New Zealand . 46 parts In-Stock

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$0.071

100+ parts

$0.068

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$0.068

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46

$0.071

$0.068

$0.068

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Semicontronic

India . 294 parts In-Stock

1+ parts

$2.010

100+ parts

$1.960

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$1.950

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294

$2.010

$1.960

$1.950

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Ampacity Inc.

Singapore . 1,415 parts In-Stock

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$3.010

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$3.010

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AZTECH Wire

Italy . 212 parts In-Stock

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$13.288

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212

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Kulean Microsystems

USA . 6,922 parts In-Stock

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6,922

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Problanco Electronics

Mexico . 6,354 parts In-Stock

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TANS Electronics

Latvia . 3,455 parts In-Stock

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3,455

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SupplyDigital Components

Austria . 2,955 parts In-Stock

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Continental Prestige Electronics

USA . 1,765 parts In-Stock

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Argo Parts USA

USA . 1,635 parts In-Stock

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Corphita

USA . 1,200 parts In-Stock

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1,200

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UHIMA Technologies

Türkiye . 889 parts In-Stock

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889

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Corohmni

South Africa . 236 parts In-Stock

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236

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Bastille Electronics

Australia . 88 parts In-Stock

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88

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Overview

Enhance the reliability of your electronic devices with the SZMMBZ9V1ALT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality transient suppression devices that provide protection against voltage spikes. Ideal for applications in automotive, industrial, and consumer electronics, this product ensures the safety and longevity of your equipment. Trust Onsemi to deliver innovative solutions that exceed expectations and keep your devices running smoothly. Choose the SZMMBZ9V1ALT1G for unparalleled performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection to the device, making it suitable for various applications and environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 24 W

High power dissipation capability allows the device to handle transient surges effectively, ensuring reliable protection for electronic components.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables the device to function efficiently in different temperature conditions, enhancing its versatility.

Minimum Breakdown Voltage: 8.65 V

Low minimum breakdown voltage enables the device to trigger quickly and protect against overvoltage events, safeguarding connected electronics.

Technology: AVALANCHE

Avalanche technology provides rapid response to transient voltage spikes, ensuring effective suppression and protection for sensitive components.

Technical Specifications

Transient Suppression Devices SZMMBZ9V1ALT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

9.56 V

Minimum Breakdown Voltage:

8.65 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

24 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

6 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

SZMMBZ9V1ALT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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