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PZTA92

Onsemi

PZTA92 by Onsemi

PZTA92 by Onsemi is a PNP BJT transistor with VCEsat of 0.5V, hFE of 25, and VCEO of 300V. Ideal for amplifier applications, it has a power dissipation of 1.5W in a small outline package with GULL WING terminals. Operating temperature ranges from -55 to 150°C.

Median Price

$0.159

Lifecycle Status

Suppliers In-Stock

34

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 5,353 parts In-Stock

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$0.078

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$0.078

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Verical

USA . 3,900 parts In-Stock

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$0.159

3,900

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Rochester

USA . 1,411 parts In-Stock

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$0.171

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$0.142

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$0.127

1,411

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$0.171

$0.142

$0.127

Distributors (In-Stock)

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Digiode

USA . 7,756 parts In-Stock

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$0.074

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$0.074

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Nova Conductors

Japan . 50 parts In-Stock

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$0.075

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Maritex

Poland . 389 parts In-Stock

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$0.099

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389

$0.099

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Component Electronics Inc.

Canada . 900 parts In-Stock

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$0.380

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$0.290

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$0.250

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900

$0.380

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Chip Stock

USA . 127,000 parts In-Stock

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Halfin

Belgium . 34,835 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 14,440 parts In-Stock

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ComSIT Distribution GmbH

Germany . 11,830 parts In-Stock

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Bristol Electronics

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Dan-Mar Components

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PAR Electronics

UK . 5,000 parts In-Stock

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Anansix

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Sogenti Electronics

Canada . 4,000 parts In-Stock

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Vyrian

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Q Components

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A&K Electronics

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Rotakorn

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EMSNET

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Elcom Components

USA . 1,571 parts In-Stock

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Atlantic Semiconductor

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Sensible Micro Corp

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ECAB

Sweden . 1,000 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 969 parts In-Stock

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Goldney Electronics S.L.

Spain . 950 parts In-Stock

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Martec Srl

Italy . 680 parts In-Stock

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R&J Components

USA . 453 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 306 parts In-Stock

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Electronic Expediters

USA . 278 parts In-Stock

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LWI Electronics Inc

India . 136 parts In-Stock

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Prism Electronics

USA . 57 parts In-Stock

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A2Z Electronics, Inc.

USA . 33 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 5,353 parts In-Stock

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$0.062

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Corphita

USA . 3,888 parts In-Stock

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$0.070

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$0.070

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Aranea Global

USA . 2,000 parts In-Stock

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$0.074

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$0.071

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2,000

$0.074

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$0.071

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Argo Parts USA

USA . 4,599 parts In-Stock

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$0.075

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$0.073

4,599

$0.075

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$0.073

Component Stockers USA

USA . 6,727 parts In-Stock

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$0.150

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$0.140

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$0.120

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6,727

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AZTECH Wire

Italy . 11,690 parts In-Stock

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$0.160

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Corohmni

South Africa . 609 parts In-Stock

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$0.538

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609

$0.538

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Modulus Dynamics

Lithuania . 24,513 parts In-Stock

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$1.640

100+ parts

$1.574

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$1.509

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24,513

$1.640

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$1.509

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Aztec Data Supply Inc.

USA . 229 parts In-Stock

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$1.893

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229

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 56,491 parts In-Stock

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Kepictronics

USA . 27,860 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,788 parts In-Stock

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Assy Fe

Spain . 14,471 parts In-Stock

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Kulean Microsystems

USA . 7,887 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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SupplyDigital Components

Austria . 5,689 parts In-Stock

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Problanco Electronics

Mexico . 5,609 parts In-Stock

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Supply Digital

USA . 4,872 parts In-Stock

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Schahn Electronic Components

Germany . 4,500 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 3,857 parts In-Stock

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TANS Electronics

Latvia . 2,869 parts In-Stock

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UNI Independent Distributors

Spain . 2,711 parts In-Stock

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UHIMA Technologies

Türkiye . 856 parts In-Stock

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Glotronic Ltd.

UK . 750 parts In-Stock

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750

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XScomponents

USA . 687 parts In-Stock

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S.R.D Solutions

India . 500 parts In-Stock

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Overview

Unleash the power of innovation with the PZTA92 by Onsemi, a top-tier manufacturer known for their high-quality Small Signal Bipolar Junction Transistors. This PNP transistor is designed for amplification applications, offering customers a reliable and efficient solution for their electronic projects. With a maximum VCEsat of only 0.5V and a minimum DC current gain of 25, this transistor delivers exceptional performance while operating at temperatures ranging from -55 to 150°C. Trust Onsemi for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors can amplify signals with high efficiency, making them ideal for amplifier applications.

Transistor Application: AMPLIFIER

Optimized for use in signal amplification, ensuring high performance in amplifier circuits.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and labor costs.

Maximum VCEsat: 0.5 V

Low saturation voltage helps reduce power dissipation and improve efficiency in circuit designs.

No. of Terminals: 4

Provides flexibility in circuit connections and integration into various electronic designs.

Maximum Power Dissipation (Abs): 1.5 W

Can handle high power levels without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 25

Ensures stable and consistent amplification of signals within the specified operating range.

Maximum Collector-Emitter Voltage: 300 V

Capable of handling high voltage levels, making it suitable for a wide range of applications.

Nominal Transition Frequency (fT): 50 MHz

Provides high frequency response for fast signal amplification and processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZTA92 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6 pF

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

PZTA92 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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