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PZT3904T1

Onsemi

PZT3904T1 by Onsemi

PZT3904T1 by Onsemi is a NPN BJT with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Features GULL WING terminals and can operate at temperatures up to 150°C.

Median Price

$0.159

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 76 parts In-Stock

1+ parts

-

100+ parts

$0.159

1k+ parts

$0.132

10k+ parts

$0.117

76

-

$0.159

$0.132

$0.117

Distributors (In-Stock)

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Nova Conductors

Japan . 44 parts In-Stock

1+ parts

$0.116

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44

$0.116

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Digiode

USA . 1,579 parts In-Stock

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$0.124

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1,579

$0.124

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Vyrian

USA . 4,048 parts In-Stock

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4,048

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PC Components Company LLC

USA . 597 parts In-Stock

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597

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Bristol Electronics

USA . 597 parts In-Stock

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597

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Distributors (Availability)

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Ampacity Inc.

Singapore . 76 parts In-Stock

1+ parts

$0.111

100+ parts

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76

$0.111

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Corohmni

South Africa . 100 parts In-Stock

1+ parts

$0.114

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100

$0.114

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Bastille Electronics

Australia . 3,675 parts In-Stock

1+ parts

$0.116

100+ parts

$0.110

1k+ parts

$0.105

10k+ parts

$0.103

3,675

$0.116

$0.110

$0.105

$0.103

Corphita

USA . 1,486 parts In-Stock

1+ parts

$0.117

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1,486

$0.117

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AZTECH Wire

Italy . 612 parts In-Stock

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$6.516

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612

$6.516

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Kepictronics

USA . 20,000 parts In-Stock

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Metaverse IC Inc.

Canada . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,878 parts In-Stock

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SupplyDigital Components

Austria . 6,547 parts In-Stock

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6,547

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Kulean Microsystems

USA . 5,862 parts In-Stock

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5,862

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Problanco Electronics

Mexico . 2,741 parts In-Stock

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2,741

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TANS Electronics

Latvia . 2,028 parts In-Stock

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2,028

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UHIMA Technologies

Türkiye . 897 parts In-Stock

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897

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Overview

Enhance your electronic projects with the reliable and efficient PZT3904T1 from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and innovation in their Small Signal Bipolar Junction Transistors (BJT). The NPN configuration and compact package make it ideal for a variety of applications. Experience the value and benefits of this product as it offers high performance, durability, and versatility. Upgrade your designs with the PZT3904T1 and see the difference in your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package material provides good protection for the transistor, ensuring long-term reliability and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for a wide range of applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and space in electronic designs.

Maximum Power Dissipation: 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels without overheating or damage.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in a wide range of environments and applications.

Maximum Collector-Emitter Voltage: 40 V

Provides a wide voltage capacity, allowing for flexibility in circuit design and compatibility with various voltage levels.

Nominal Transition Frequency: 300 MHz

High transition frequency enables high-frequency signal amplification, making this transistor suitable for radio frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT3904T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

PZT3904T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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