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NZT560

Onsemi

NZT560 by Onsemi

NZT560 by Onsemi is a NPN BJT transistor with 4 terminals, capable of handling up to 3A collector current and 2W power dissipation. With a min DC current gain of 100 and max operating temperature of 150 °C, it's ideal for small signal applications requiring high frequency operation up to 75MHz.

Median Price

$0.259

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,605 parts In-Stock

1+ parts

$0.288

100+ parts

$0.124

1k+ parts

$0.071

10k+ parts

-

1,605

$0.288

$0.124

$0.071

-

Mouser Electronics

USA . 4,143 parts In-Stock

1+ parts

$0.880

100+ parts

$0.357

1k+ parts

$0.247

10k+ parts

$0.210

4,143

$0.880

$0.357

$0.247

$0.210

DigiKey

USA . 2,407 parts In-Stock

1+ parts

$0.940

100+ parts

$0.379

1k+ parts

$0.262

10k+ parts

$0.190

2,407

$0.940

$0.379

$0.262

$0.190

Rochester

USA . 24,387 parts In-Stock

1+ parts

-

100+ parts

$0.230

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$0.191

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$0.170

24,387

-

$0.230

$0.191

$0.170

Verical

USA . 10,857 parts In-Stock

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$0.212

10,857

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$0.212

Chip1Stop

Japan . 1,875 parts In-Stock

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$0.167

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$0.166

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1,875

-

$0.167

$0.166

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Distributors (In-Stock)

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Vyrian

USA . 1,768 parts In-Stock

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$0.158

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1,768

$0.158

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Digiode

USA . 1,817 parts In-Stock

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$0.179

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1,817

$0.179

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Bristol Electronics

USA . 2,180 parts In-Stock

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2,180

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Flip Electronics

USA . 207 parts In-Stock

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207

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Electronic Expediters

USA . 28 parts In-Stock

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Corohmni

South Africa . 276 parts In-Stock

1+ parts

$0.158

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276

$0.158

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Corphita

USA . 2,511 parts In-Stock

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$0.169

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2,511

$0.169

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Andel Nordic

Denmark . 2,506 parts In-Stock

1+ parts

$10.289

100+ parts

-

1k+ parts

$9.877

10k+ parts

$9.877

2,506

$10.289

-

$9.877

$9.877

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 13,539 parts In-Stock

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13,539

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,079 parts In-Stock

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Kepictronics

USA . 8,000 parts In-Stock

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SupplyDigital Components

Austria . 7,896 parts In-Stock

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Problanco Electronics

Mexico . 5,471 parts In-Stock

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Kulean Microsystems

USA . 5,098 parts In-Stock

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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Supply Digital

USA . 2,754 parts In-Stock

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TANS Electronics

Latvia . 1,861 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Futuretech Components

Singapore . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 263 parts In-Stock

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263

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Overview

Experience the exceptional quality and reliability of the NZT560 by Onsemi, a leading manufacturer in the industry. This NPN Small Signal Bipolar Junction Transistor offers countless applications in electronics, providing customers with unparalleled performance and efficiency. With its innovative design and durable construction, the NZT560 guarantees value and benefits that cater to your specific needs. Trust Onsemi to deliver top-notch products that exceed expectations and elevate your projects to new heights. Elevate your electronics with the NZT560 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile and widely applicable.

Configuration: SINGLE

Simplified circuit design and ease of use due to single configuration.

Package Shape: RECTANGULAR

Efficient use of space on PCB, allowing for compact and streamlined designs.

Maximum Power Dissipation (Abs): 2 W

Capable of handling moderate power levels, suitable for a variety of applications without risk of overheating.

Minimum DC Current Gain (hFE): 100

High current gain ensures efficient signal amplification in electronic circuits.

Maximum Collector-Emitter Voltage: 60 V

Can withstand relatively high voltage levels, expanding the range of possible applications.

Maximum Collector Current (IC): 3 A

Capable of handling high current levels, making it suitable for power applications.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during reflow soldering, ensuring reliable assembly onto PCBs.

Nominal Transition Frequency (fT): 75 MHz

High transition frequency allows for high-speed switching and amplification, making this transistor suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NZT560 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NZT560 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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