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NZT560A

Onsemi

NZT560A by Onsemi

NZT560A by Onsemi is a NPN BJT transistor with 4 terminals, capable of handling up to 3A collector current and 2W power dissipation. With a transition frequency of 75MHz, it's ideal for small signal applications in electronics requiring high DC current gain. Its compact rectangular package makes it suitable for surface mount designs operating at temperatures up to 150°C.

Median Price

$0.474

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 500 parts In-Stock

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$0.276

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$0.276

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$0.276

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500

$0.276

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$0.276

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Arrow

USA . 680 parts In-Stock

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$0.415

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$0.284

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$0.209

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680

$0.415

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$0.209

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Newark

USA . 6,210 parts In-Stock

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$0.999

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$0.405

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$0.281

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6,210

$0.999

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$0.281

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DigiKey

USA . 8,648 parts In-Stock

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$1.030

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$0.417

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$0.290

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$0.211

8,648

$1.030

$0.417

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$0.211

Mouser Electronics

USA . 8,777 parts In-Stock

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$1.060

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$0.433

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$0.290

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$0.226

8,777

$1.060

$0.433

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$0.226

Farnell

UK . 6,555 parts In-Stock

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$0.533

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$0.241

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$0.219

6,555

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$0.533

$0.241

$0.219

Element14

Singapore . 6,555 parts In-Stock

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$0.569

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$0.397

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$0.361

6,555

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$0.569

$0.397

$0.361

Chip1Stop

Japan . 4,000 parts In-Stock

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$0.193

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$0.193

Verical

USA . 680 parts In-Stock

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$0.284

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$0.209

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680

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$0.284

$0.209

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Rochester

USA . 365 parts In-Stock

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$0.260

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$0.216

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$0.193

365

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$0.260

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$0.193

Distributors (In-Stock)

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Digiode

USA . 2,632 parts In-Stock

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$0.202

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Nova Conductors

Japan . 870 parts In-Stock

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$0.271

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870

$0.271

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TME

Poland . 3,345 parts In-Stock

1+ parts

$0.920

100+ parts

$0.395

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$0.270

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3,345

$0.920

$0.395

$0.270

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Chip Stock

USA . 6,500 parts In-Stock

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Vyrian

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Bristol Electronics

USA . 4,985 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 4,450 parts In-Stock

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NAC Semi

USA . 4,000 parts In-Stock

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$0.432

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$0.432

Connector Distribution Corp

USA . 2,100 parts In-Stock

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Right Parts Inc.

USA . 2,100 parts In-Stock

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R&J Components

USA . 1,173 parts In-Stock

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Electronic Expediters

USA . 817 parts In-Stock

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Zilex Electronics Inc.

Canada . 247 parts In-Stock

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Cyclops Electronics Ltd

UK . 200 parts In-Stock

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200

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Flip Electronics

USA . 27 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 5,729 parts In-Stock

1+ parts

$0.157

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5,729

$0.157

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Corohmni

South Africa . 405 parts In-Stock

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$0.185

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405

$0.185

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Corphita

USA . 2,129 parts In-Stock

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$0.192

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Netroflash

USA . 2,000 parts In-Stock

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$0.271

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$0.271

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Argo Parts USA

USA . 698 parts In-Stock

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$0.271

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$0.263

698

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$0.263

Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.276

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$0.276

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$0.276

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500

$0.276

$0.276

$0.276

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Aztec Data Supply Inc.

USA . 200 parts In-Stock

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$0.367

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200

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 29,454 parts In-Stock

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Continental Prestige Electronics

USA . 17,495 parts In-Stock

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$0.306

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$0.172

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$0.169

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TANS Electronics

Latvia . 7,323 parts In-Stock

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Lixinc

USA . 3,870 parts In-Stock

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SupplyDigital Components

Austria . 3,260 parts In-Stock

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Kulean Microsystems

USA . 2,716 parts In-Stock

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Kepictronics

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Assy Fe

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S.R.D Solutions

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Problanco Electronics

Mexico . 787 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 123 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 100 parts In-Stock

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Overview

Elevate your electronic designs with the NZT560A by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) that delivers unmatched performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor is the perfect choice for a wide range of applications. With a maximum power dissipation of 2W and a high DC current gain of 250, this transistor offers exceptional value and efficiency. Trust Onsemi's commitment to quality and innovation, and bring your projects to the next level with the NZT560A.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Common and versatile type of transistor that allows for easy integration into various circuit designs.

Configuration: SINGLE

Simplified setup and operation.

Surface Mount: YES

Easy and convenient installation on printed circuit boards.

Package Shape: RECTANGULAR

Optimal for space-saving designs and efficient PCB layouts.

No. of Terminals: 4

Provides necessary connections for effective signal amplification and control.

Maximum Power Dissipation (Abs): 2 W

Can handle high power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 250

Provides high amplification capabilities for signal processing applications.

Maximum Operating Temperature: 150 °C

Can operate in a wide range of temperature environments, making it versatile for various applications.

Maximum Collector-Emitter Voltage: 60 V

Suitable for circuits requiring higher voltage levels.

Transistor Element Material: SILICON

Highly reliable and widely used material for transistor construction.

Maximum Collector Current (IC): 3 A

Can handle high current levels, making it suitable for power applications.

Terminal Finish: MATTE TIN

Provides stable electrical connections and resistance to corrosion.

Terminal Position: DUAL

Allows for flexible PCB layout and connection options.

Case Connection: COLLECTOR

Efficiently connects the transistor to the circuit, enhancing signal processing efficiency.

Nominal Transition Frequency (fT): 75 MHz

Suitable for high-frequency signal processing and amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NZT560A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

250

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NZT560A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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