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NZQA6V8XV5T2

Onsemi

NZQA6V8XV5T2 by Onsemi

NZQA6V8XV5T2 by Onsemi is a Transient Suppression Device with 4 common anode elements. It has a max non-repetitive peak reverse power dissipation of 100W and operates in unidirectional polarity. Ideal for protecting electronic circuits from voltage spikes, it features avalanche technology and a breakdown voltage range of 6.46-7.14V.

Median Price

$0.089

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

36,000

-

$0.092

$0.077

$0.068

Verical

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

36,000

-

-

-

$0.086

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 437 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

-

437

$0.072

-

-

-

Chip Stock

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24,000

-

-

-

-

Vyrian

USA . 11,089 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,089

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,076 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

-

1,076

$0.068

-

-

-

Corohmni

South Africa . 116 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

-

116

$0.072

-

-

-

Component Stockers USA

USA . 41,994 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.070

41,994

$0.080

$0.070

$0.070

$0.070

AZTECH Wire

Italy . 645 parts In-Stock

1+ parts

$11.590

100+ parts

-

1k+ parts

-

10k+ parts

-

645

$11.590

-

-

-

Kepictronics

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

42,000

-

-

-

-

Continental Prestige Electronics

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.065

10k+ parts

-

36,000

-

-

$0.065

-

Problanco Electronics

Mexico . 8,264 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,264

-

-

-

-

SupplyDigital Components

Austria . 4,881 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,881

-

-

-

-

TANS Electronics

Latvia . 3,429 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,429

-

-

-

-

UHIMA Technologies

Türkiye . 54 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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54

-

-

-

-

Kulean Microsystems

USA . 11 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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11

-

-

-

-

Overview

Experience the superior quality of the NZQA6V8XV5T2 by Onsemi, a leading manufacturer in transient suppression devices. With its common anode configuration and four elements, this product offers unmatched protection against voltage spikes. Ideal for a wide range of applications, this small outline package ensures easy installation and reliable performance. Trust Onsemi's advanced technology and expertise to safeguard your valuable equipment from electrical surges. Upgrade to the NZQA6V8XV5T2 for peace of mind and uninterrupted operation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and durability for the device.

Config: COMMON ANODE, 4 ELEMENTS

Allows for effective suppression of transient voltage spikes.

Surface Mount: YES

Easy to integrate into circuit boards for compact design.

Maximum Non Repetitive Peak Reverse Power Dissipation: 100 W

Capable of handling high power surges during transient events.

Package Shape: RECTANGULAR

Saves space and provides ease of mounting on PCBs.

No. of Terminals: 5

Sufficient connection points for effective operation.

Terminal Finish: MATTE TIN

Provides good conductivity for reliable performance.

Terminal Position: DUAL

Allows for versatile placement in circuit layouts.

Maximum Power Dissipation: 0.3 W

Helps in dissipating heat effectively to avoid overheating.

Minimum Breakdown Voltage: 6.46 V

Ensures protection against voltage surges above this level.

Maximum Breakdown Voltage: 7.14 V

Provides flexibility in voltage protection range.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Designed specifically for transient voltage suppression applications.

Technology: AVALANCHE

Offers reliable performance and fast response to voltage spikes.

Terminal Form: FLAT

Ensures stable connection during operation.

No. of Elements: 4

Multiple elements enhance the device's capability to suppress transients.

Polarity: UNIDIRECTIONAL

Provides protection in one direction, suitable for specific applications.

Diode Element Material: SILICON

Known for its high conductivity and durability, enhancing the device's performance.

Technical Specifications

Transient Suppression Devices NZQA6V8XV5T2 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.14 V

Minimum Breakdown Voltage:

6.46 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

4

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NZQA6V8XV5T2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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