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NZQA5V6AXV5T1G

Onsemi

NZQA5V6AXV5T1G by Onsemi

NZQA5V6AXV5T1G by Onsemi is a transient suppression device with common anode configuration, 4 elements, and max power dissipation of 20W. It is used for protecting electronic circuits from voltage spikes in applications such as consumer electronics and industrial equipment.

Median Price

$0.198

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,367 parts In-Stock

1+ parts

$0.250

100+ parts

$0.148

1k+ parts

$0.119

10k+ parts

$0.115

1,367

$0.250

$0.148

$0.119

$0.115

DigiKey

USA . 21,586 parts In-Stock

1+ parts

$0.690

100+ parts

$0.273

1k+ parts

$0.186

10k+ parts

$0.168

21,586

$0.690

$0.273

$0.186

$0.168

Mouser Electronics

USA . 909 parts In-Stock

1+ parts

$0.690

100+ parts

$0.274

1k+ parts

$0.186

10k+ parts

$0.130

909

$0.690

$0.274

$0.186

$0.130

Rochester

USA . 162,362 parts In-Stock

1+ parts

-

100+ parts

$0.146

1k+ parts

$0.121

10k+ parts

$0.108

162,362

-

$0.146

$0.121

$0.108

Verical

USA . 159,726 parts In-Stock

1+ parts

-

100+ parts

-

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$0.135

159,726

-

-

-

$0.135

Chip1Stop

Japan . 1,772 parts In-Stock

1+ parts

-

100+ parts

$0.099

1k+ parts

$0.098

10k+ parts

$0.098

1,772

-

$0.099

$0.098

$0.098

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,495 parts In-Stock

1+ parts

$0.104

100+ parts

-

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-

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-

1,495

$0.104

-

-

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Digiode

USA . 1,460 parts In-Stock

1+ parts

$0.113

100+ parts

-

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1,460

$0.113

-

-

-

Cyclops Electronics Ltd

UK . 6,102 parts In-Stock

1+ parts

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6,102

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-

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Chip Stock

USA . 5,960 parts In-Stock

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5,960

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Bristol Electronics

USA . 5,212 parts In-Stock

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5,212

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M&R Communications

USA . 3,964 parts In-Stock

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-

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3,964

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Netsource Technology, Inc.

USA . 3,859 parts In-Stock

1+ parts

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3,859

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NPI Materials, Inc.

USA . 2,703 parts In-Stock

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2,703

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,389 parts In-Stock

1+ parts

$0.107

100+ parts

-

1k+ parts

-

10k+ parts

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2,389

$0.107

-

-

-

Corohmni

South Africa . 261 parts In-Stock

1+ parts

$0.111

100+ parts

-

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-

10k+ parts

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261

$0.111

-

-

-

Component Stockers USA

USA . 333,302 parts In-Stock

1+ parts

$0.120

100+ parts

$0.110

1k+ parts

$0.100

10k+ parts

$0.100

333,302

$0.120

$0.110

$0.100

$0.100

Kepictronics

USA . 900,000 parts In-Stock

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900,000

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Continental Prestige Electronics

USA . 170,362 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.143

10k+ parts

-

170,362

-

-

$0.143

-

Perfect Parts

USA . 93,864 parts In-Stock

1+ parts

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93,864

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Lixinc

USA . 8,309 parts In-Stock

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8,309

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SupplyDigital Components

Austria . 6,831 parts In-Stock

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6,831

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Problanco Electronics

Mexico . 5,146 parts In-Stock

1+ parts

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5,146

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TANS Electronics

Latvia . 4,026 parts In-Stock

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4,026

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A-Z Elektronik GmbH

Germany . 2,868 parts In-Stock

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2,868

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Kulean Microsystems

USA . 1,600 parts In-Stock

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1,600

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Assy Fe

Spain . 1,000 parts In-Stock

1+ parts

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1,000

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Futuretech Components

Singapore . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 411 parts In-Stock

1+ parts

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411

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Overview

Enhance your electronic devices with the NZQA5V6AXV5T1G by Onsemi, a top-quality transient suppression device designed to protect against voltage spikes and surges. Manufactured by industry leader Onsemi, this product offers unparalleled reliability and performance, making it ideal for a wide range of applications. With its common anode configuration and four elements, this device ensures maximum protection with minimal power dissipation. Say goodbye to worrying about voltage fluctuations and safeguard your equipment with the NZQA5V6AXV5T1G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the device, making it suitable for various environmental conditions.

Config: COMMON ANODE, 4 ELEMENTS

The common anode configuration with 4 elements allows for effective transient suppression across multiple channels, providing enhanced protection for electronic circuits.

Maximum Non Repetitive Peak Reverse Power Dissipation: 20 W

The high power dissipation capability ensures that the device can handle transient surges effectively without getting damaged, extending the lifespan of the protected equipment.

Nominal Breakdown Voltage: 5.6 V

The nominal breakdown voltage indicates the level at which the device starts conducting and suppressing transient voltages, offering reliable protection for sensitive components.

Maximum Reverse Current: 1 uA

The low reverse current ensures minimal leakage during normal operation, maintaining the efficiency of the device while providing continuous protection against transients.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the device to function reliably in a wide range of temperature environments, making it suitable for industrial applications.

Technical Specifications

Transient Suppression Devices NZQA5V6AXV5T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

5.9 V

Minimum Breakdown Voltage:

5.3 V

Nominal Breakdown Voltage:

5.6 V

Maximum Clamping Voltage:

13 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

20 W

No. of Elements:

4

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.38 W

Qualification:

Not Qualified

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NZQA5V6AXV5T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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