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NZQA5V6XV5T3G

Onsemi

NZQA5V6XV5T3G by Onsemi

NZQA5V6XV5T3G by Onsemi is a Transient Suppression Device with 4 common anode elements. It has a max non-repetitive peak reverse power dissipation of 100W and breakdown voltage of 5.6V. Ideal for applications requiring protection against voltage transients in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 32,000 parts In-Stock

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Vyrian

USA . 4,418 parts In-Stock

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Digiode

USA . 2,315 parts In-Stock

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AZTECH Wire

Italy . 955 parts In-Stock

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$9.260

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TANS Electronics

Latvia . 4,388 parts In-Stock

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Kulean Microsystems

USA . 3,445 parts In-Stock

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Problanco Electronics

Mexico . 2,812 parts In-Stock

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SupplyDigital Components

Austria . 1,334 parts In-Stock

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Corphita

USA . 1,263 parts In-Stock

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UHIMA Technologies

Türkiye . 429 parts In-Stock

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Corohmni

South Africa . 177 parts In-Stock

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Overview

Protect your electronics with the NZQA5V6XV5T3G by Onsemi, a top-quality transient suppression device designed to safeguard against voltage spikes. Manufactured by Onsemi, a trusted leader in semiconductor technology, this product offers reliable protection for a wide range of applications. With its common anode configuration and small outline package style, it is easy to install and provides peace of mind knowing that your devices are safe from power surges. Invest in the NZQA5V6XV5T3G today and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Config: COMMON ANODE, 4 ELEMENTS

Common anode configuration allows for easy connection to a circuit, and having 4 elements provides multiple levels of protection.

Surface Mount: YES

Surface mount technology makes installation easier and saves space on the circuit board.

Maximum Non Repetitive Peak Reverse Power Dissipation: 100 W

With a high power dissipation rating, this product can handle surges or spikes in power without being damaged.

Nominal Breakdown Voltage: 5.6 V

The breakdown voltage ensures that the device activates at the appropriate voltage level to suppress transient spikes.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and compact design on a circuit board.

No. of Terminals: 5

Having 5 terminals provides flexibility in connecting the device to a circuit.

Terminal Finish: TIN

Tin finish on terminals allows for good solderability and stable connections.

Terminal Position: DUAL

Dual terminal position provides redundancy and added stability in the connection.

Maximum Power Dissipation: 0.3 W

Low power dissipation helps in reducing heat generation and energy consumption.

Minimum Breakdown Voltage: 5.32 V

Having a minimum breakdown voltage ensures reliable activation of the device at the specified voltage level.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for easy and efficient soldering during assembly.

Maximum Breakdown Voltage: 5.88 V

Higher maximum breakdown voltage provides an extra margin of safety against transient spikes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode is specifically designed for transient voltage suppression, making it highly effective in protecting circuits.

Technology: AVALANCHE

Avalanche technology allows for quick response to transient spikes, ensuring efficient suppression.

Terminal Form: FLAT

Flat terminal form provides easy and secure connections to the circuit board.

No. of Elements: 4

Having multiple elements provides enhanced protection against transient spikes from various sources.

Maximum Repetitive Peak Reverse Voltage: 3 V

With a low maximum reverse voltage, the device can quickly activate to suppress transient spikes without damage.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that the device suppresses spikes in a single direction, providing targeted protection.

Maximum Clamping Voltage: 10.5 V

Having a maximum clamping voltage of 10.5 V ensures that the protected circuit stays within safe voltage levels during transient events.

Diode Element Material: SILICON

Silicon material in the diode element provides high conductivity and stability in suppressing transient spikes.

Technical Specifications

Transient Suppression Devices NZQA5V6XV5T3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

5.88 V

Minimum Breakdown Voltage:

5.32 V

Nominal Breakdown Voltage:

5.6 V

Maximum Clamping Voltage:

10.5 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

4

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NZQA5V6XV5T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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