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NZQA14VAXV5T1

Onsemi

NZQA14VAXV5T1 by Onsemi

NZQA14VAXV5T1 by Onsemi is a Transient Suppression Device with 4 common anode elements. It has a max non-repetitive peak reverse power dissipation of 20W and operates b/w -55 °C to 150°C. Ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,464 parts In-Stock

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Digiode

USA . 928 parts In-Stock

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928

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TANS Electronics

Latvia . 6,488 parts In-Stock

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6,488

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SupplyDigital Components

Austria . 6,193 parts In-Stock

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Kulean Microsystems

USA . 3,804 parts In-Stock

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Problanco Electronics

Mexico . 1,513 parts In-Stock

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Corphita

USA . 1,370 parts In-Stock

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UHIMA Technologies

Türkiye . 556 parts In-Stock

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Corohmni

South Africa . 489 parts In-Stock

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Overview

Enhance the reliability and performance of your electronic devices with the NZQA14VAXV5T1 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and innovation in their transient suppression devices. This small outline package with common anode configuration boasts 4 elements for superior protection against voltage surges. Ideal for a wide range of applications, this diode type TRANS VOLTAGE SUPPRESSOR DIODE is designed to operate efficiently at extreme temperatures. Trust Onsemi to deliver unmatched value and peace of mind with the NZQA14VAXV5T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the device.

Config: COMMON ANODE, 4 ELEMENTS

Allows for efficient protection against voltage spikes and transients with multiple elements working together.

Surface Mount: YES

Easy to install and saves space on the PCB.

Maximum Non Repetitive Peak Reverse Power Dissipation: 20 W

Can handle high power surges without damaging the device.

Package Shape: RECTANGULAR

Fits well within electronic circuits and devices.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without malfunctioning.

Minimum Operating Temperature: -55 °C

Can operate in cold temperatures without issues.

Terminal Finish: MATTE TIN

Provides good conductivity and prevents corrosion.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, ensuring reliable protection.

Technology: AVALANCHE

Utilizes avalanche breakdown for superior clamping capability.

Technical Specifications

Transient Suppression Devices NZQA14VAXV5T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

14.7 V

Minimum Breakdown Voltage:

13.3 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

20 W

No. of Elements:

4

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.38 W

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NZQA14VAXV5T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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