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NZQA6V8AXV5T2

Onsemi

NZQA6V8AXV5T2 by Onsemi

NZQA6V8AXV5T2 by Onsemi is a Transient Suppression Device with 4 common anode elements. It has a max non-repetitive peak reverse power dissipation of 20W and min breakdown voltage of 6.47V. Ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

12,000

-

$0.092

$0.077

$0.068

DigiKey

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.120

12,000

-

-

-

$0.120

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

12,000

-

-

-

$0.086

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,021 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

-

2,021

$0.072

-

-

-

Digiode

USA . 1,758 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

-

1,758

$0.072

-

-

-

Chip Stock

USA . 62,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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62,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 950 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

-

950

$0.068

-

-

-

Corohmni

South Africa . 438 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

-

438

$0.072

-

-

-

Component Stockers USA

USA . 7,392 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.070

7,392

$0.080

$0.070

$0.070

$0.070

Continental Prestige Electronics

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.065

10k+ parts

-

12,000

-

-

$0.065

-

Kepictronics

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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10,000

-

-

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Kulean Microsystems

USA . 6,606 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6,606

-

-

-

-

Problanco Electronics

Mexico . 6,266 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6,266

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-

-

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SupplyDigital Components

Austria . 4,497 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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4,497

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-

-

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TANS Electronics

Latvia . 2,348 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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2,348

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-

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,000

-

-

-

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UHIMA Technologies

Türkiye . 328 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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328

-

-

-

-

Overview

Experience the superior quality and reliability of the NZQA6V8AXV5T2 transient suppression device by Onsemi. Designed with common anode configuration and four elements, this product offers unmatched protection against voltage spikes in various applications. With a maximum power dissipation of 20W and a breakdown voltage range from 6.47V to 7.14V, this device ensures optimal performance and durability. Trust Onsemi's expertise in semiconductor technology and choose the NZQA6V8AXV5T2 for your surge protection needs. Unlock peace of mind and safeguard your electronics with this advanced solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the device, making it ideal for a variety of applications.

Config: COMMON ANODE, 4 ELEMENTS

Allows for efficient and effective transient suppression across multiple elements, providing enhanced protection.

Surface Mount: YES

Easy to install and provides flexibility for placement in electronic circuits.

Maximum Non Repetitive Peak Reverse Power Dissipation: 20 W

Capable of handling high power transients, ensuring reliable protection for sensitive components.

Package Shape: RECTANGULAR

Allows for easy integration into circuit layouts and provides a compact form factor.

No. of Terminals: 5

Enables versatile connectivity options for different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Space-saving design that is suitable for compact electronic devices.

Terminal Finish: TIN

Provides good conductivity and corrosion resistance for reliable performance.

Maximum Power Dissipation: 0.38 W

Efficient power handling capability for effective transient suppression.

Minimum Breakdown Voltage: 6.47 V

Ensures reliable protection by activating at lower voltage thresholds.

Peak Reflow Temperature °C: 260

Can withstand high temperature reflow processes during assembly.

Maximum Breakdown Voltage: 7.14 V

Provides a safety margin above the minimum breakdown voltage for added protection.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specialized diode type designed for transient suppression applications, delivering efficient performance.

Technology: AVALANCHE

Utilizes avalanche breakdown mechanism for robust and reliable transient suppression.

Terminal Form: FLAT

Facilitates easy soldering and secure connection in electronic circuits.

No. of Elements: 4

Multiple elements enhance the overall transient suppression capability of the device.

Polarity: UNIDIRECTIONAL

Provides protection in a specific direction, ensuring targeted suppression of transient voltages.

Diode Element Material: SILICON

Silicon diode element offers reliable performance and consistency in transient suppression applications.

Technical Specifications

Transient Suppression Devices NZQA6V8AXV5T2 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.14 V

Minimum Breakdown Voltage:

6.47 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

20 W

No. of Elements:

4

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.38 W

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NZQA6V8AXV5T2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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