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NZQA6V2XV5T1G

Onsemi

NZQA6V2XV5T1G by Onsemi

NZQA6V2XV5T1G by Onsemi is a Transient Suppression Device with 4 common anode elements. It has a max power dissipation of 100W and breakdown voltage of 6.2V. Ideal for applications requiring protection against voltage transients in electronic circuits, it operates b/w -55°C to 150°C temperature range.

Median Price

$0.530

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,417 parts In-Stock

1+ parts

$0.520

100+ parts

$0.201

1k+ parts

$0.135

10k+ parts

$0.094

3,417

$0.520

$0.201

$0.135

$0.094

DigiKey

USA . 4,874 parts In-Stock

1+ parts

$0.540

100+ parts

$0.209

1k+ parts

$0.140

10k+ parts

$0.126

4,874

$0.540

$0.209

$0.140

$0.126

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,348 parts In-Stock

1+ parts

$0.323

100+ parts

-

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-

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2,348

$0.323

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Chip Stock

USA . 91,257 parts In-Stock

1+ parts

-

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-

1k+ parts

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91,257

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Flip Electronics

USA . 8,000 parts In-Stock

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-

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8,000

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-

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Vyrian

USA . 5,657 parts In-Stock

1+ parts

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5,657

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$0.223

100+ parts

$0.203

1k+ parts

$0.183

10k+ parts

-

270

$0.223

$0.203

$0.183

-

Corphita

USA . 1,180 parts In-Stock

1+ parts

$0.306

100+ parts

-

1k+ parts

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1,180

$0.306

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-

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Corohmni

South Africa . 137 parts In-Stock

1+ parts

$0.340

100+ parts

-

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137

$0.340

-

-

-

RC Electronics

USA . 77,939 parts In-Stock

1+ parts

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100+ parts

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77,939

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Kepictronics

USA . 56,000 parts In-Stock

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56,000

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Lixinc

USA . 16,177 parts In-Stock

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16,177

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Perfect Parts

USA . 10,599 parts In-Stock

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10,599

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TANS Electronics

Latvia . 7,318 parts In-Stock

1+ parts

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7,318

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Problanco Electronics

Mexico . 6,883 parts In-Stock

1+ parts

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6,883

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SupplyDigital Components

Austria . 3,515 parts In-Stock

1+ parts

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100+ parts

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3,515

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Kulean Microsystems

USA . 3,055 parts In-Stock

1+ parts

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3,055

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

1+ parts

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1,800

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UHIMA Technologies

Türkiye . 793 parts In-Stock

1+ parts

-

100+ parts

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793

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Overview

Enhance your electronic devices with the NZQA6V2XV5T1G by Onsemi – a top-quality transient suppression device that offers unparalleled protection against voltage spikes and surges. Manufactured by Onsemi, a renowned leader in semiconductor technology, this product boasts a common anode configuration with 4 elements for efficient performance. Ideal for a wide range of applications, this device is designed to safeguard your equipment while ensuring reliable operation. Experience the peace of mind that comes with using a trusted brand like Onsemi, and elevate your electronics with the superior quality and performance of the NZQA6V2XV5T1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and reliability, making this product suitable for various environments and applications.

Config: COMMON ANODE, 4 ELEMENTS

Common anode configuration with four elements allows for efficient transient suppression and protection against voltage spikes.

Maximum Non Repetitive Peak Reverse Power Dissipation: 100 W

High power dissipation capability ensures effective protection of sensitive components from transient events.

Nominal Breakdown Voltage: 6.2 V

The specified breakdown voltage ensures reliable voltage clamping and protection against overvoltage conditions.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy mounting and integration into circuit designs.

No. of Terminals: 5

Having five terminals allows for versatile connectivity options and configuration in different circuit layouts.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range ensures stable performance in demanding environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature range enables reliable operation even in extreme cold environments.

Terminal Finish: TIN

Tin terminal finish provides good electrical conductivity and corrosion resistance for long-lasting performance.

Maximum Power Dissipation: 0.3 W

Efficient power dissipation capability ensures reliable operation and protection under transient conditions.

Technical Specifications

Transient Suppression Devices NZQA6V2XV5T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

6.51 V

Minimum Breakdown Voltage:

5.89 V

Nominal Breakdown Voltage:

6.2 V

Maximum Clamping Voltage:

11.5 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

4

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NZQA6V2XV5T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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