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NZQA5V6AXV5T1

Onsemi

NZQA5V6AXV5T1 by Onsemi

NZQA5V6AXV5T1 by Onsemi is a transient suppression device with 4 common anode elements. It has a breakdown voltage of 5.6 V, max power dissipation of 0.38 W, and operates b/w -55 to 150 °C. Ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 79,180 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

79,180

-

$0.092

$0.077

$0.068

DigiKey

USA . 79,180 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.120

79,180

-

-

-

$0.120

Verical

USA . 72,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

72,000

-

-

-

$0.086

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 585 parts In-Stock

1+ parts

$0.072

100+ parts

-

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585

$0.072

-

-

-

Digiode

USA . 2,081 parts In-Stock

1+ parts

$0.072

100+ parts

-

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2,081

$0.072

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-

Chip Stock

USA . 64,000 parts In-Stock

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64,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 807 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

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10k+ parts

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807

$0.068

-

-

-

Corohmni

South Africa . 88 parts In-Stock

1+ parts

$0.072

100+ parts

-

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10k+ parts

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88

$0.072

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-

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Continental Prestige Electronics

USA . 79,180 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.065

10k+ parts

-

79,180

-

-

$0.065

-

RC Electronics

USA . 9,000 parts In-Stock

1+ parts

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9,000

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-

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Kulean Microsystems

USA . 7,022 parts In-Stock

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7,022

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Problanco Electronics

Mexico . 3,717 parts In-Stock

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3,717

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SupplyDigital Components

Austria . 1,921 parts In-Stock

1+ parts

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1,921

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TANS Electronics

Latvia . 1,641 parts In-Stock

1+ parts

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1,641

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UHIMA Technologies

Türkiye . 816 parts In-Stock

1+ parts

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816

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Overview

Discover the powerful protection of the NZQA5V6AXV5T1 by Onsemi, a top-tier manufacturer known for delivering high-quality transient suppression devices. Ideal for a wide range of applications, this product offers customers peace of mind with its superior performance and reliability. With a common anode configuration and four elements, this device ensures maximum safety in critical electronic systems. Say goodbye to unexpected voltage spikes and protect your valuable equipment with the advanced technology of the NZQA5V6AXV5T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and resistant to environmental factors, providing added protection to the components within.

Nominal Breakdown Voltage: 5.6 V

The higher breakdown voltage ensures reliable protection against transient voltage spikes, offering peace of mind for sensitive electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand harsh environments and maintain performance under challenging conditions.

Reference Standard: IEC-61000-4-2

Compliance with this standard ensures that the product meets industry requirements for transient suppression, providing a reliable solution for protection against voltage surges.

Technical Specifications

Transient Suppression Devices NZQA5V6AXV5T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

5.9 V

Minimum Breakdown Voltage:

5.3 V

Nominal Breakdown Voltage:

5.6 V

Maximum Clamping Voltage:

13 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

20 W

No. of Elements:

4

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.38 W

Qualification:

Not Qualified

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NZQA5V6AXV5T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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