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NZQA5V6XV5T1

Onsemi

NZQA5V6XV5T1 by Onsemi

NZQA5V6XV5T1 by Onsemi is a Transient Suppression Device with 4 common anode elements. It has a max power dissipation of 100W and breakdown voltage of 5.6V. Ideal for applications requiring protection against voltage transients in electronic circuits.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 220,412 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

220,412

-

$0.092

$0.077

$0.068

DigiKey

USA . 220,412 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.120

220,412

-

-

-

$0.120

Verical

USA . 188,307 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

188,307

-

-

-

$0.086

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,204 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

-

2,204

$0.072

-

-

-

Digiode

USA . 1,554 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

-

1,554

$0.072

-

-

-

Chip Stock

USA . 19,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 126 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

-

126

$0.068

-

-

-

Corohmni

South Africa . 300 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$0.072

-

-

-

Continental Prestige Electronics

USA . 220,412 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.065

10k+ parts

-

220,412

-

-

$0.065

-

GreenTree Electronics

Israel . 32,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

32,000

-

-

-

-

SupplyDigital Components

Austria . 6,415 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,415

-

-

-

-

Problanco Electronics

Mexico . 4,567 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,567

-

-

-

-

Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Kulean Microsystems

USA . 3,296 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,296

-

-

-

-

TANS Electronics

Latvia . 2,727 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,727

-

-

-

-

A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,400

-

-

-

-

Perfect Parts

USA . 1,680 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,680

-

-

-

-

UHIMA Technologies

Türkiye . 744 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

744

-

-

-

-

Overview

Unlock the power of reliable transient suppression with the NZQA5V6XV5T1 by Onsemi. Designed with precision and quality, this common anode device offers unmatched protection against voltage spikes, ensuring the safety and longevity of your electronic devices. Whether it's for industrial, automotive, or consumer applications, this compact and efficient solution provides peace of mind and uninterrupted performance. Say goodbye to unexpected downtime and hello to seamless operation with the NZQA5V6XV5T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good insulation and protection against environmental factors, making the device durable and long-lasting.

Config: COMMON ANODE, 4 ELEMENTS

Common anode configuration with 4 elements allows for effective transient suppression across multiple channels, providing comprehensive protection.

Surface Mount: YES

The surface mount capability makes installation easier and more efficient, saving time and effort in the assembly process.

Maximum Non Repetitive Peak Reverse Power Dissipation: 100 W

With a high maximum power dissipation rating of 100W, the device can effectively handle large transient surges without damage.

Nominal Breakdown Voltage: 5.6 V

The nominal breakdown voltage of 5.6V ensures reliable protection against overvoltage conditions, safeguarding connected components.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into existing circuit layouts, optimizing space and design flexibility.

No. of Terminals: 5

Having 5 terminals provides multiple connection points, enhancing versatility in application and ensuring secure electrical connections.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is suitable for compact device designs, making it ideal for various electronic applications.

Terminal Finish: TIN

The tin terminal finish offers good conductivity and corrosion resistance, ensuring reliable electrical connections for optimal performance.

Terminal Position: DUAL

Dual terminal positions provide flexibility in installation and compatibility with different circuit configurations, enhancing usability.

Maximum Power Dissipation: 0.3 W

The low maximum power dissipation of 0.3W reduces energy consumption and heat generation, contributing to overall system efficiency.

Minimum Breakdown Voltage: 5.32 V

The minimum breakdown voltage ensures consistent performance and protection levels under varying operating conditions, enhancing reliability.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C allows for reliable soldering during assembly, ensuring secure connections and longevity.

Maximum Breakdown Voltage: 5.88 V

The high maximum breakdown voltage of 5.88V provides an added margin of safety and protection against transient voltage spikes, enhancing overall durability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of transient voltage suppressor diodes ensures fast and effective clamping of voltage spikes, protecting sensitive components from damage.

Technology: AVALANCHE

The avalanche technology used in the diodes allows for rapid response to transient events, offering reliable overvoltage protection in critical situations.

Terminal Form: FLAT

The flat terminal form facilitates easy soldering and secure connections, contributing to the overall reliability and performance of the device.

No. of Elements: 4

Having 4 elements increases the overall robustness and efficiency of transient suppression, ensuring thorough protection across multiple pathways.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures consistent and controlled conduction of transient surges in one direction, maintaining signal integrity and system reliability.

Maximum Clamping Voltage: 10.5 V

The maximum clamping voltage of 10.5V limits the voltage spikes effectively, ensuring that downstream components are not exposed to damaging overvoltages.

Diode Element Material: SILICON

The use of silicon as the diode element material offers high efficiency and reliability in transient suppression, providing durable protection against voltage spikes.

Technical Specifications

Transient Suppression Devices NZQA5V6XV5T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

5.88 V

Minimum Breakdown Voltage:

5.32 V

Nominal Breakdown Voltage:

5.6 V

Maximum Clamping Voltage:

10.5 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

4

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NZQA5V6XV5T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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