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NVJS4405NT1G

Onsemi

NVJS4405NT1G by Onsemi

NVJS4405NT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1A Drain Current, 0.35 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 0.89W and AEC-Q101 standard compliance, it ensures reliable performance in various electronic systems.

Median Price

$0.480

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 790 parts In-Stock

1+ parts

$0.480

100+ parts

$0.188

1k+ parts

$0.130

10k+ parts

$0.102

790

$0.480

$0.188

$0.130

$0.102

DigiKey

USA . 425 parts In-Stock

1+ parts

$0.480

100+ parts

$0.188

1k+ parts

$0.126

10k+ parts

$0.092

425

$0.480

$0.188

$0.126

$0.092

Chip1Stop

Japan . 1,995 parts In-Stock

1+ parts

$1.050

100+ parts

$0.287

1k+ parts

$0.168

10k+ parts

-

1,995

$1.050

$0.287

$0.168

-

Rochester

USA . 785 parts In-Stock

1+ parts

-

100+ parts

$0.098

1k+ parts

$0.081

10k+ parts

$0.073

785

-

$0.098

$0.081

$0.073

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,145 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

-

10k+ parts

-

2,145

$0.076

-

-

-

Vyrian

USA . 2,052 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

-

10k+ parts

-

2,052

$0.080

-

-

-

Flip Electronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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15,000

-

-

-

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Cyclops Electronics Ltd

UK . 12,746 parts In-Stock

1+ parts

-

100+ parts

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12,746

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-

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ComSIT Distribution GmbH

Germany . 8,070 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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8,070

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,945 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

-

1,945

$0.072

-

-

-

Corohmni

South Africa . 78 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

-

10k+ parts

-

78

$0.080

-

-

-

Perfect Parts

USA . 79,514 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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79,514

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-

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TANS Electronics

Latvia . 5,248 parts In-Stock

1+ parts

-

100+ parts

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5,248

-

-

-

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SupplyDigital Components

Austria . 5,220 parts In-Stock

1+ parts

-

100+ parts

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5,220

-

-

-

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Kepictronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,000

-

-

-

-

Authorized Procurement Solutions

USA . 2,900 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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2,900

-

-

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Kulean Microsystems

USA . 2,115 parts In-Stock

1+ parts

-

100+ parts

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2,115

-

-

-

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GreenTree Electronics

Israel . 2,095 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,095

-

-

-

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Problanco Electronics

Mexico . 346 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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346

-

-

-

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UHIMA Technologies

Türkiye . 307 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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307

-

-

-

-

Overview

Discover the innovative NVJS4405NT1G by Onsemi, a high-quality Small Signal Field Effect Transistor with N-CHANNEL polarity and single configuration with built-in diode. Ideal for switching applications, this transistor offers reliable performance and efficient power dissipation. With a maximum drain current of 1A and operating temperature up to 150°C, this transistor ensures optimal functionality in various electronic devices. Upgrade your designs with the advanced technology of Onsemi's FETs and experience enhanced efficiency and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow and control in the specified direction, enhancing performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it ideal for various electronic devices and circuits.

Minimum DS Breakdown Voltage: 25 V

With a high breakdown voltage, this FET can withstand higher voltages, making it suitable for different voltage levels.

Surface Mount: YES

Enables easy and convenient mounting onto circuit boards, saving space and facilitating automated assembly.

Maximum Drain Current (Abs) (ID): 1 A

Capable of handling high currents, allowing for robust and reliable operation in various applications.

Maximum Power Dissipation (Abs): 0.89 W

With a high power dissipation capability, this FET can handle heat effectively, ensuring stable performance under load.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, suitable for applications where heat dissipation is crucial.

Maximum Feedback Capacitance (Crss): 12 pF

Low feedback capacitance helps in reducing signal distortion, improving overall signal integrity and performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NVJS4405NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

.35 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

12 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NVJS4405NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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