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NVJS4151PT1G

Onsemi

NVJS4151PT1G by Onsemi

NVJS4151PT1G by Onsemi is a P-CHANNEL FET with 3.2A max drain current and 1.2W power dissipation. Ideal for applications requiring high temperature tolerance up to 150°C, such as automotive electronics and industrial control systems.

Median Price

$0.382

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 54,814 parts In-Stock

1+ parts

$0.900

100+ parts

$0.362

1k+ parts

$0.278

10k+ parts

$0.190

54,814

$0.900

$0.362

$0.278

$0.190

Mouser Electronics

USA . 754 parts In-Stock

1+ parts

$0.920

100+ parts

$0.390

1k+ parts

$0.306

10k+ parts

-

754

$0.920

$0.390

$0.306

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Newark

USA . 241 parts In-Stock

1+ parts

$0.975

100+ parts

$0.437

1k+ parts

-

10k+ parts

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241

$0.975

$0.437

-

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Rochester

USA . 303,000 parts In-Stock

1+ parts

-

100+ parts

$0.233

1k+ parts

$0.194

10k+ parts

$0.172

303,000

-

$0.233

$0.194

$0.172

Flip Electronics (Authorized)

USA . 6,000 parts In-Stock

1+ parts

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6,000

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Arrow

USA . 3,000 parts In-Stock

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$0.189

3,000

-

-

-

$0.189

Verical

USA . 3,000 parts In-Stock

1+ parts

-

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$0.189

3,000

-

-

-

$0.189

Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

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$0.189

3,000

-

-

-

$0.189

Element14

Singapore . 241 parts In-Stock

1+ parts

-

100+ parts

$0.532

1k+ parts

$0.511

10k+ parts

$0.500

241

-

$0.532

$0.511

$0.500

Farnell

UK . 41 parts In-Stock

1+ parts

-

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41

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Distributors (In-Stock)

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Digiode

USA . 1,111 parts In-Stock

1+ parts

$0.181

100+ parts

-

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1,111

$0.181

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Vyrian

USA . 1,552 parts In-Stock

1+ parts

$0.185

100+ parts

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1,552

$0.185

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Flip Electronics

USA . 6,000 parts In-Stock

1+ parts

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6,000

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 47,361 parts In-Stock

1+ parts

$0.157

100+ parts

-

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47,361

$0.157

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Semicontronic

India . 46,920 parts In-Stock

1+ parts

$0.157

100+ parts

$0.153

1k+ parts

$0.152

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46,920

$0.157

$0.153

$0.152

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Corphita

USA . 2,223 parts In-Stock

1+ parts

$0.172

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2,223

$0.172

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Corohmni

South Africa . 430 parts In-Stock

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$0.185

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430

$0.185

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Continental Prestige Electronics

USA . 150,000 parts In-Stock

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$0.229

10k+ parts

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150,000

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-

$0.229

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Robosynatics

Brazil . 18,966 parts In-Stock

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18,966

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Lucentia Tech

USA . 18,966 parts In-Stock

1+ parts

-

100+ parts

$0.252

1k+ parts

$0.247

10k+ parts

$0.247

18,966

-

$0.252

$0.247

$0.247

Lixinc

USA . 14,061 parts In-Stock

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14,061

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Argo Parts USA

USA . 3,513 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,020 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Kulean Microsystems

USA . 1,144 parts In-Stock

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UHIMA Technologies

Türkiye . 769 parts In-Stock

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769

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Problanco Electronics

Mexico . 536 parts In-Stock

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536

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SupplyDigital Components

Austria . 255 parts In-Stock

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Overview

Unleash the power of innovation with the NVJS4151PT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Field Effect Transistors that are perfect for a wide range of applications. With its P-CHANNEL configuration and maximum drain current of 3.2 A, this FET offers exceptional performance and reliability. Experience the benefits of cutting-edge technology and superior design with the NVJS4151PT1G, providing value and efficiency to customers like never before. Elevate your projects with Onsemi's trusted solutions.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors can operate in low-voltage applications and provide high input impedance, making them suitable for use in small signal amplification circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to integrate into electronic systems.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and enabling mass production of electronic devices.

Maximum Drain Current (Abs) (ID): 3.2 A

High maximum drain current allows for handling of larger current loads, making it suitable for medium-power applications.

Maximum Power Dissipation (Abs): 1.2 W

High power dissipation rating allows for efficient heat dissipation, ensuring stable operation under varying load conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers low power consumption and high input impedance, making it ideal for low-power and high-frequency applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance in harsh environmental conditions, making it suitable for industrial and automotive applications.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, ensuring long-term reliability in electronic assemblies.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time minimizes thermal stress on the component during assembly, reducing the risk of damage and ensuring consistent performance.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for fast and efficient soldering process, ensuring reliable connections and robust mechanical strength.

Technical Specifications

Small Signal Field Effect Transistors (FET) NVJS4151PT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3.2 A

Maximum Drain Current (ID):

3.2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NVJS4151PT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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