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NUD3105LT1

Onsemi

NUD3105LT1 by Onsemi

NUD3105LT1 by Onsemi is a MOS technology peripheral driver with 3 terminals. It operates b/w -40 to 85 °C, with a supply voltage of 6V and max current of 500mA. This small outline, thin profile package is ideal for buffer or inverter based applications requiring transient protection and sink output flow direction.

Median Price

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Lifecycle Status

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Chip Stock

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Electronics Depot

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Digiode

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Prism Electronics

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Vigor

Singapore . 360 parts In-Stock

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AZTECH Wire

Italy . 678 parts In-Stock

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Component Stockers USA

USA . 687 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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Perfect Parts

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UHIMA Technologies

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Overview

Unlock the power of efficient peripheral driving with the NUD3105LT1 by Onsemi. Crafted with precision and quality, this innovative device offers reliable performance and built-in protections against transients. Perfect for a wide range of applications, this small outline, thin profile package is ideal for ensuring smooth operation in your electronic designs. With a nominal supply voltage of 6V and a maximum operating temperature of 85 °C, this peripheral driver delivers exceptional value and benefits to customers looking for top-notch reliability and performance. Elevate your projects with the NUD3105LT1 and experience the difference that quality manufacturing can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and resistance to external elements, making the product suitable for various environments.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Built-in Protections: TRANSIENT

Built-in transient protections ensure the safety and reliability of the peripheral driver, protecting it from voltage spikes and other electrical disturbances.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the peripheral driver can function effectively in elevated temperature conditions without the risk of overheating.

Technology: MOS

MOS technology offers high speed and low power consumption, making the peripheral driver efficient and suitable for various applications.

Technical Specifications

Peripheral Drivers NUD3105LT1 attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

TRANSIENT

JESD-30 Code:

R-PDSO-G3

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SINK

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TO-236

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

235

Maximum Seated Height:

1.11 mm

Maximum Supply Current:

500 mA

Nominal Supply Voltage:

6 V

Surface Mount:

YES

Technology:

MOS

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.9 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.044 us

Turn-on Time:

.044 us

Width:

1.3 mm

Trade Compliance

NUD3105LT1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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