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NUD3105DMT1

Onsemi

NUD3105DMT1 by Onsemi

NUD3105DMT1 by Onsemi is a Peripheral Driver with 2 functions, MOS technology, and 0.4A max output current. It has transient protection and operates b/w -40 to 85°C. Ideal for applications requiring BUFFER OR INVERTER BASED PERIPHERAL DRIVER interface ICs in compact spaces.

Median Price

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Lifecycle Status

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Chip Stock

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Prism Electronics

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Beltway Electronics Company

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Digiode

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Nova Conductors

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AZTECH Wire

Italy . 560 parts In-Stock

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Ampacity Inc.

Singapore . 223 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Problanco Electronics

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TANS Electronics

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Vigor

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Overview

Discover the Onsemi NUD3105DMT1, a high-quality peripheral driver designed to meet your needs. Manufactured by industry leader Onsemi, this product offers built-in transient protections and a small outline package style for easy integration. Ideal for a wide range of applications, this peripheral driver provides reliable performance and efficiency, with a maximum output current of 0.4A and a nominal supply voltage of 6V. Experience the value and benefits that this innovative product brings to your projects, from improved functionality to enhanced reliability. Elevate your designs with the Onsemi NUD3105DMT1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection for the peripheral driver.

Surface Mount: YES

Allows for easy installation and space-saving on a circuit board.

No. of Functions: 2

Provides versatility and flexibility in driving peripherals.

Built-in Protections: TRANSIENT

Ensures safety and reliability by protecting against transient voltage spikes.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for a variety of environments.

Minimum Operating Temperature: -40 °C

Capable of operating in cold temperatures without performance issues.

Maximum Output Current: 0.4 A

Can handle a high output current, providing sufficient power to connected peripherals.

Nominal Supply Voltage: 6 V

Operates at a common supply voltage, making it compatible with many systems.

Turn-on Time: 0.044 us

Has a fast turn-on time, reducing delay and improving response time in driving peripherals.

Output Current Flow Direction: SINK

The sink output current flow direction is suitable for driving components that require a low-side switch.

Technical Specifications

Peripheral Drivers NUD3105DMT1 attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

TRANSIENT

JESD-30 Code:

R-PDSO-G6

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SINK

Maximum Output Current:

.4 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOP6,.12,38

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

235

Maximum Seated Height:

1.1 mm

Maximum Supply Current:

500 mA

Nominal Supply Voltage:

6 V

Surface Mount:

YES

Technology:

MOS

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.044 us

Turn-on Time:

.044 us

Width:

1.5 mm

Trade Compliance

NUD3105DMT1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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