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NTSV30100SG

Onsemi

NTSV30100SG by Onsemi

The Onsemi NTSV30100SG is a Schottky rectifier diode with 100V peak reverse voltage and 30A output current. It operates b/w -40°C to 150°C, ideal for efficiency applications. The package style is flange mount with a single terminal position, making it suitable for various electronic circuits.

Median Price

$0.471

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 12,200 parts In-Stock

1+ parts

-

100+ parts

$0.462

1k+ parts

$0.384

10k+ parts

$0.342

12,200

-

$0.462

$0.384

$0.342

DigiKey

USA . 12,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.580

10k+ parts

-

12,200

-

-

$0.580

-

Farnell

UK . 12,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.309

10k+ parts

-

12,200

-

-

$0.309

-

Verical

USA . 9,750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.480

10k+ parts

$0.428

9,750

-

-

$0.480

$0.428

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,379 parts In-Stock

1+ parts

$0.360

100+ parts

-

1k+ parts

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1,379

$0.360

-

-

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Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$0.366

100+ parts

-

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600

$0.366

-

-

-

Chip Stock

USA . 32,000 parts In-Stock

1+ parts

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32,000

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-

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DigiKey Marketplace

USA . 12,200 parts In-Stock

1+ parts

-

100+ parts

$0.390

1k+ parts

-

10k+ parts

-

12,200

-

$0.390

-

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Vyrian

USA . 10,582 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10,582

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 10,952 parts In-Stock

1+ parts

$0.263

100+ parts

-

1k+ parts

-

10k+ parts

-

10,952

$0.263

-

-

-

Semicontronic

India . 10,670 parts In-Stock

1+ parts

$0.263

100+ parts

$0.256

1k+ parts

$0.255

10k+ parts

-

10,670

$0.263

$0.256

$0.255

-

Corohmni

South Africa . 385 parts In-Stock

1+ parts

$0.309

100+ parts

-

1k+ parts

-

10k+ parts

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385

$0.309

-

-

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Corphita

USA . 1,197 parts In-Stock

1+ parts

$0.341

100+ parts

-

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10k+ parts

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1,197

$0.341

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.358

100+ parts

-

1k+ parts

$0.344

10k+ parts

-

50

$0.358

-

$0.344

-

Argo Parts USA

USA . 1,346 parts In-Stock

1+ parts

$0.366

100+ parts

-

1k+ parts

-

10k+ parts

$0.355

1,346

$0.366

-

-

$0.355

Continental Prestige Electronics

USA . 12,200 parts In-Stock

1+ parts

-

100+ parts

$0.460

1k+ parts

-

10k+ parts

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12,200

-

$0.460

-

-

Problanco Electronics

Mexico . 7,295 parts In-Stock

1+ parts

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100+ parts

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7,295

-

-

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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5,000

-

-

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Kulean Microsystems

USA . 2,113 parts In-Stock

1+ parts

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100+ parts

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2,113

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UHIMA Technologies

Türkiye . 595 parts In-Stock

1+ parts

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595

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TANS Electronics

Latvia . 547 parts In-Stock

1+ parts

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547

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SupplyDigital Components

Austria . 406 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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406

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Overview

Experience the next level of efficiency with the NTSV30100SG by Onsemi. This high-quality rectifier diode offers superior performance and reliability, making it the perfect choice for a wide range of applications. From industrial equipment to consumer electronics, this Schottky diode delivers optimal power efficiency and stability. Trust in Onsemi's reputation for excellence and invest in the NTSV30100SG for unmatched value and benefits. Make the smart choice for your project and experience the difference with Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material offers durability and protection to the diode, making it suitable for various environments and applications.

Config: SINGLE

The single configuration simplifies the circuit design and installation process, making it easy to integrate this diode into different systems.

Maximum Reverse Current: 1000 uA

The low maximum reverse current ensures minimal power loss and improved efficiency in the operation of the diode.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and secure placement in electronic circuits or PCBs.

No. of Terminals: 3

With 3 terminals, this diode offers flexibility in connectivity options and allows for versatile usage in different circuit configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and secure mounting in electronic devices or equipment.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for applications where power conversion or rectification with minimal energy loss is essential.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures in various operating conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in cold environments or during temperature fluctuations.

Terminal Finish: TIN

The tin terminal finish offers good conductivity and corrosion resistance, enhancing the reliability and longevity of the diode.

Terminal Position: SINGLE

The single terminal position simplifies installation and ensures proper alignment in the circuit, facilitating easy integration.

Case Connection: CATHODE

With cathode case connection, this diode is suitable for applications requiring specific polarity configurations.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed for converting AC to DC current with low forward voltage drop and high output current capability.

Maximum Forward Voltage (VF): 1.1 V

The low maximum forward voltage helps minimize power loss and improve efficiency in rectification or power conversion applications.

Maximum Output Current: 30 A

With a high maximum output current, this diode can handle significant current loads, making it suitable for power electronics and high-current applications.

Technology: SCHOTTKY

The Schottky technology offers fast switching speed, low forward voltage drop, and high efficiency, making this diode ideal for high-frequency and power applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form facilitates easy soldering and secure connection in electronic circuits, ensuring reliable operation.

Maximum Repetitive Peak Reverse Voltage: 100 V

With a high maximum repetitive peak reverse voltage, this diode can withstand reverse voltage fluctuations and protect the circuit from overvoltage conditions.

Maximum Non Repetitive Peak Forward Current: 100 A

The high maximum non-repetitive peak forward current rating ensures the diode can handle short-term current surges or spikes without damage.

Diode Element Material: SILICON

The silicon diode element material offers reliable performance, low leakage current, and stable characteristics, making this diode a durable and long-lasting choice.

Technical Specifications

Diodes & Rectifiers NTSV30100SG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

1000 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSV30100SG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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