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NTSV30H100ECTG

Onsemi

NTSV30H100ECTG by Onsemi

NTSV30H100ECTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 15A. It operates b/w -40 to 175 °C, has a max reverse voltage of 100V, and is ideal for efficiency applications.

Median Price

$0.742

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,150 parts In-Stock

1+ parts

-

100+ parts

$0.728

1k+ parts

$0.604

10k+ parts

$0.538

7,150

-

$0.728

$0.604

$0.538

Verical

USA . 6,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.755

10k+ parts

$0.673

6,050

-

-

$0.755

$0.673

Flip Electronics (Authorized)

USA . 5,150 parts In-Stock

1+ parts

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5,150

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Distributors (In-Stock)

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Vyrian

USA . 1,824 parts In-Stock

1+ parts

$0.530

100+ parts

-

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1,824

$0.530

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Digiode

USA . 1,377 parts In-Stock

1+ parts

$0.594

100+ parts

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1,377

$0.594

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Chip Stock

USA . 75,000 parts In-Stock

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75,000

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Flip Electronics

USA . 5,150 parts In-Stock

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5,150

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 392 parts In-Stock

1+ parts

$0.530

100+ parts

-

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392

$0.530

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Corphita

USA . 1,829 parts In-Stock

1+ parts

$0.562

100+ parts

-

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1,829

$0.562

-

-

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Continental Prestige Electronics

USA . 7,150 parts In-Stock

1+ parts

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100+ parts

$0.602

1k+ parts

-

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7,150

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$0.602

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Kulean Microsystems

USA . 6,059 parts In-Stock

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6,059

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Microchip USA

USA . 5,700 parts In-Stock

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5,700

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SupplyDigital Components

Austria . 5,330 parts In-Stock

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5,330

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Problanco Electronics

Mexico . 3,336 parts In-Stock

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3,336

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UHIMA Technologies

Türkiye . 761 parts In-Stock

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761

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TANS Electronics

Latvia . 387 parts In-Stock

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387

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Overview

Unlock the power of efficiency with the NTSV30H100ECTG by Onsemi. This high-quality diode rectifier offers unparalleled performance and reliability, thanks to Onsemi's reputation for excellence in manufacturing. Perfect for a wide range of applications, this diode provides maximum output current of 15A and has a maximum repetitive peak reverse voltage of 100V. Experience seamless operation and superior quality with the NTSV30H100ECTG, making it the ideal choice for your efficiency needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy connection and integration into circuit designs.

Maximum Reverse Current: 85 uA

Low reverse current ensures minimal power loss and increased efficiency.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for a wide range of applications.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage drop, ideal for high-efficiency applications.

Maximum Output Current: 15 A

Capable of handling high currents, suitable for power applications.

Technical Specifications

Diodes & Rectifiers NTSV30H100ECTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

125 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

85 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Trade Compliance

NTSV30H100ECTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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